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PDF 2STC5949 Data sheet ( Hoja de datos )
| Número de pieza | 2STC5949 | |
| Descripción | High power NPN epitaxial planar bipolar transistor | |
| Fabricantes | STMicroelectronics | |
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2STC5949
High power NPN epitaxial planar bipolar transistor
Features
■ High breakdown voltage VCEO = 250 V
■ Complementary to 2STA2121
■ Fast-switching speed
■ Typical ft = 25 MHz
■ Fully characterized at 125 oC
Applications
■ Audio power amplifier
Description
The device is a NPN transistor manufactured
using new BiT-LA (Bipolar transistor for linear
amplifier) technology. The resulting transistor
shows good gain linearity behaviour.
TO-264
Figure 1. Internal schematic diagram
Table 1. Device summary
Order code
2STC5949
Marking
2STC5949
Package
TO-264
Packaging
Tube
July 2008
Rev 3
1/8
www.st.com
8
1 page  
2STC5949
3 Package mechanical data
Package mechanical data
www.datasheet4u.comIn order to meet environmental requirements, ST offers these devices in ECOPACK®
packages. These packages have a Lead-free second level interconnect . The category of
second level interconnect is marked on the package and on the inner box label, in compliance
with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also
marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are
available at: www.st.com
5/8
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| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet 2STC5949.PDF ] | |
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| Número de pieza | Descripción | Fabricantes |
| 2STC5948 | High power NPN epitaxial planar bipolar transistor | STMicroelectronics |
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