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BUK7880-55A PDF 데이터시트 : 부품 기능 및 핀배열

부품번호 BUK7880-55A
기능 N-channel TrenchMOS standard level FET
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BUK7880-55A 데이터시트, 핀배열, 회로
BUK7880-55A
N-channel TrenchMOS standard level FET
Rev. 01 — 1 November 2007
www.datasheet4u.com
1. Product profile
Product data sheet
1.1 General description
N-channel enhancement mode power Field-Effect Transistor (FET) in a plastic package
using NXP General Purpose Automotive (GPA) TrenchMOS technology.
1.2 Features
I Very low on-state resistance
I 150 °C rated
I Q101 compliant
I Standard level compatible
1.3 Applications
I Automotive systems
I Motors, lamps and solenoids
I General purpose power switching
I 12 V and 24 V loads
1.4 Quick reference data
I EDS(AL)S 53 mJ
I ID 7 A
I RDSon = 68 m(typ)
I Ptot 8 W
2. Pinning information
Table 1. Pinning
Pin Description
1 gate (G)
2 drain (D)
3 source (S)
4 solder point; connected to drain (D)
Simplified outline
4
1 23
sot223_so
SOT223 (SC-73)
Symbol
D
G
mbb076 S




BUK7880-55A pdf, 반도체, 판매, 대치품
NXP Semiconductors
BUK7880-55A
N-channel TrenchMOS standard level FET
5. Thermal characteristics
www.datasheet4u.com
Table 4. Thermal characteristics
Symbol Parameter
Rth(j-a)
Rth(j-sp)
thermal resistance from junction to ambient
thermal resistance from junction to solder point
Conditions
Min Typ Max Unit
- 70 - K/W
- - 15 K/W
102
Zth(j-sp)
(K/W)
10 δ = 0.5
003aab529
0.2
0.1
1 0.05
0.02
10-1
P
tp
δ=
T
single shot
tp t
10-2
10-6
10-5
10-4
10-3
10-2
T
10-1 tp (s)
1
Fig 4. Transient thermal impedance from junction to solder point as a function of pulse duration
BUK7880-55A_1
Product data sheet
Rev. 01 — 1 November 2007
© NXP B.V. 2007. All rights reserved.
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BUK7880-55A 전자부품, 판매, 대치품
NXP Semiconductors
BUK7880-55A
N-channel TrenchMOS standard level FET
www.datasheet45u.com
VGS(th)
(V)
4
3
2
1
max
typ
min
03aa32
101
ID
(A)
102
103
104
105
03aa35
min typ max
0
60
0
60 120 180
Tj (°C)
ID = 1 mA; VDS = VGS
Fig 9. Gate-source threshold voltage as a function of
junction temperature
106
0246
VGS (V)
Tj = 25 °C; VDS = VGS
Fig 10. Sub-threshold drain current as a function of
gate-source voltage
9
003aab527
103
gfs
(S) C
(pF)
8
003aab520
Ciss
Coss
7 102
Crss
6
5
5 10 15 ID (A) 20
Tj = 25 °C; VDS = 15 V
Fig 11. Forward transconductance as a function of
drain current; typical values
10
10-1
1
10 102
VDS (V)
VGS = 0 V; f = 1 MHz
Fig 12. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values
BUK7880-55A_1
Product data sheet
Rev. 01 — 1 November 2007
© NXP B.V. 2007. All rights reserved.
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부품번호상세설명 및 기능제조사
BUK7880-55

TrenchMOS transistor Standard level FET

NXP
NXP
BUK7880-55

TrenchMOS transistor Standard level FET

NXP
NXP

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