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PDF NX3L1G3157 Data sheet ( Hoja de datos )
| Número de pieza | NX3L1G3157 | |
| Descripción | double-throw switch | |
| Fabricantes | NXP Semiconductors | |
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NX3L1G3157
Low-ohmic, single-pole, double-throw switch
Rev. 01 — 8 October 2007
Product data sheet
www.datasheet4u.com
1. General description
The NX3L1G3157 provides one, low-ohmic, single-pole, double-throw analog switch
suitable for use as an analog or digital multiplexer/demultiplexer. It has a digital select
input (S) with Schmitt-trigger action, two independent inputs/outputs (Y0, Y1) and a
common input/output (Z).
Schmitt-trigger action at the select input (S) makes the circuit tolerant to slower input rise
and fall times across the entire VCC range from 1.4 V to 3.6 V.
The NX3L1G3157 allows signals with amplitude up to VCC to be transmitted from Z to Y0
or Y1; or from Y0 or Y1 to Z. It’s low ON resistance (0.5 Ω) and flatness (0.13 Ω) ensures
minimal attenuation and distortion of transmitted signals.
2. Features
s Wide supply voltage range from 1.4 V to 3.6 V
s Very low ON resistance:
x 1.6 Ω (typical) at VCC = 1.4 V
x 1.0 Ω (typical) at VCC = 1.65 V
x 0.55 Ω (typical) at VCC = 2.3 V
x 0.50 Ω (typical) at VCC = 2.7 V
s Break-before-make switching
s High noise immunity
s ESD protection:
x HBM JESD22-A114E Class 3A exceeds 7500 V
x MM JESD22-A115-A exceeds 200 V
x CDM AEC-Q100-011 revision B exceeds 1000 V
s CMOS low-power consumption
s Latch-up performance exceeds 100 mA per JESD 78 Class II Level B
s Direct interface with TTL levels at 3.0 V
s Control input accepts voltages above supply voltage
s High current handling capability (350 mA continuous current under 3.3 V supply)
s Specified from −40 °C to +85 °C and from −40 °C to +125 °C
3. Applications
s Cell phone
s PDA
s Portable media player
1 page  
NXP Semiconductors
NX3L1G3157
Low-ohmic, single-pole, double-throw switch
Table 7. Static characteristics …continued
At recommended operating conditions; voltages are referenced to GND (ground 0 V).
www.dSatyamshbeoetl4uP.caormameter
Conditions
25 °C
Min Typ Max
CS(OFF)
CS(ON)
OFF-state
capacitance
ON-state
capacitance
- 35 -
- 130 -
11.1 Test circuits
−40 °C to +125 °C
Unit
Min Max Max
(85 °C) (125 °C)
- - - pF
- - - pF
VIL or VIH
VI
VCC
S Y0 1
switch
Z Y1 2
IS
GND
VI = 0.3 V or VCC − 0.3 V; VO = VCC − 0.3 V or 0.3 V.
Fig 4. Test circuit for measuring OFF-state leakage current
switch
1
2
S
VIH
VIL
VO
001aac358
VIL or VIH
IS
VCC
S Y0 1
switch
Z Y1 2
switch
1
2
S
VIH
VIL
VI
GND
VI = 0.3 V or VCC − 0.3 V; VO = VCC − 0.3 V or 0.3 V.
Fig 5. Test circuit for measuring ON-state leakage current
VO
001aac359
NX3L1G3157_1
Product data sheet
Rev. 01 — 8 October 2007
© NXP B.V. 2007. All rights reserved.
5 of 18
5 Page 
NXP Semiconductors
NX3L1G3157
Low-ohmic, single-pole, double-throw switch
www.datasheet4u.com
a. Test circuit
G VI
GND
V VO RL
VCC
S Y0
Z Y1
CL
VEXT = 1.5 V
001aag571
VI 0.5VI
0.9VO
VO
tb-m
b. Input and output pulse definitions
Fig 14. Test circuit for measuring break-before-make timing
0.9VO
001aag572
VCC
S Y0 1
switch
Z Y1 2
G VI
GND
V VO
RL
CL
Test data is given in Table 11.
Definitions test circuit:
RL = Load resistance.
CL = Load capacitance including jig and probe capacitance.
VEXT = External voltage for measuring switching times.
Fig 15. Load circuit for switching times
VEXT = 1.5 V
001aag642
Table 11. Test data
Supply voltage
VCC
1.4 V to 3.6 V
Input
VI
VCC
tr, tf
≤ 2.5 ns
Load
CL
35 pF
NX3L1G3157_1
Product data sheet
Rev. 01 — 8 October 2007
RL
50 Ω
© NXP B.V. 2007. All rights reserved.
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