NX3V1G66 Datasheet PDF - NXP Semiconductors
| Part Number | NX3V1G66 | |
| Description | Low-voltage analog switch | |
| Manufacturers | NXP Semiconductors | |
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NX3V1G66
Low-voltage analog switch
Rev. 02 — 28 July 2008
Product data sheet
www.datasheet4u.com
1. General description
The NX3V1G66 provides one single-pole single-throw analog switch function. It has two
input/output terminals (Y and Z) and an active HIGH enable input pin (E). When pin E is
LOW, the analog switch is turned off.
Schmitt trigger action at the enable input (E) makes the circuit tolerant to slower input rise
and fall times across the entire VCC range from 1.4 V to 3.6 V.
The NX3V1G66 allows signals with amplitude up to VCC to be transmitted from Y to Z or
from Z to Y. Its ultra-low ON resistance (0.3 Ω) and flatness (0.1 Ω) ensures minimal
attenuation and distortion of transmitted signals.
2. Features
I Wide supply voltage range from 1.4 V to 3.6 V
I Very low ON resistance (peak):
N 0.8 Ω (typical) at VCC = 1.4 V
N 0.5 Ω (typical) at VCC = 1.65 V
N 0.3 Ω (typical) at VCC = 2.3 V
N 0.25 Ω (typical) at VCC = 2.7 V
I High noise immunity
I ESD protection:
N HBM JESD22-A114E Class 3A exceeds 7500 V
N MM JESD22-A115-A exceeds 200 V
N CDM AEC-Q100-011 revision B exceeds 1000 V
I CMOS low-power consumption
I Latch-up performance exceeds 100 mA per JESD78 Class II Level A
I Direct interface with TTL levels at 3.0 V
I Control input accepts voltages above supply voltage
I High current handling capability (500 mA continuous current under 3.3 V supply)
I Specified from −40 °C to +85 °C and from −40 °C to +125 °C
3. Applications
I Cell phone
I PDA
I Portable media player
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NXP Semiconductors
NX3V1G66
Low-voltage analog switch
11.1 Test circuits
www.datasheet4u.com
VCC
VIL E
IS Z
VI
Y IS
GND
VO
VIH E
IS Z
VI
VCC
Y
GND
VO
001aag488
Fig 5.
VI = 0.3 V or VCC − 0.3 V; VO = VCC − 0.3 V or 0.3 V.
Test circuit for measuring OFF-state leakage
current
001aag489
Fig 6.
VI = 0.3 V or VCC − 0.3 V; VO = open circuit.
Test circuit for measuring ON-state leakage
current
11.2 ON resistance
Table 8. Resistance RON
At recommended operating conditions; voltages are referenced to GND (ground = 0 V); for graphs see Figure 8 to Figure 13.
Symbol Parameter
Conditions
Tamb = −40 °C to +85 °C Tamb = −40 °C to +125 °C Unit
Min Typ[1] Max
Min
Max
RON(peak) ON resistance
(peak)
RON(flat) ON resistance
(flatness)
VI = GND to VCC;
ISW = 100 mA; see Figure 7
VCC = 1.4 V
VCC = 1.65 V
VCC = 2.3 V
VCC = 2.7 V
VI = GND to VCC;
ISW = 100 mA
VCC = 1.4 V
VCC = 1.65 V
VCC = 2.3 V
VCC = 2.7 V
[2]
-
-
-
-
-
-
-
-
0.8 1.9
0.5 0.8
0.3 0.5
0.25 0.45
0.5 1.7
0.25 0.6
0.1 0.2
0.1 0.2
-
-
-
-
-
-
-
-
2.1 Ω
0.9 Ω
0.6 Ω
0.5 Ω
1.8 Ω
0.7 Ω
0.2 Ω
0.2 Ω
[1] Typical values are measured at Tamb = 25 °C.
[2] Flatness is defined as the difference between the maximum and minimum value of ON resistance measured at identical VCC and
temperature.
NX3V1G66_2
Product data sheet
Rev. 02 — 28 July 2008
© NXP B.V. 2008. All rights reserved.
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