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Número de pieza | STP200N4F3 | |
Descripción | N-channel Power MOSFET | |
Fabricantes | STMicroelectronics | |
Logotipo | ||
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STP200N4F3
STB200N4F3
N-channel 40V - 0.0035Ω - 120A - D2PAK - TO-220
planar STripFET™ Power MOSFET
Features
Type
STB200N4F3
STP200N4F3
VDSS RDS(on) Max
40V <0.0040Ω
40V <0.0044Ω
ID
120A
120A
Pw
300W
300W
■ 100% avalanche tested
■ Standard threshold drive
Applications
■ Switching applications
– Automotive
Description
This Power MOSFET is the latest development of
STMicroelectronics unique “single feature size™”
strip-based process. The resulting transistor
shows extremely high packing density for low on-
resistance, rugged avalanche characteristics and
less critical alignment steps therefore a
remarkable manufacturing reproducibility. this
new improved device has been specifically
designed for automotive applications.
3
1
D²PAK
3
2
1
TO-220
Figure 1. Internal schematic diagram
Table 1. Device summary
Order codes
STB200N4F3
STP200N4F3
Marking
200N4F3
200N4F3
Package
D²PAK
TO-220
Packaging
Tape & reel
Tube
October 2007
Rev 2
1/14
www.st.com
14
1 page STB200N4F3 - STP200N4F3
Electrical characteristics
Table 6. Switching times
Symbol
Parameter
www.datasheet4u.com
td(on)
tr
Turn-on delay time
Rise time
td(off)
tf
Off-voltage rise time
Fall time
Test conditions
VDD=20 V, ID=60A,
RG=4.7Ω, VGS=10V
(see Figure 13)
VDD=20 V, ID=60A,
RG=4.7Ω, VGS=10V
(see Figure 13)
Min Typ Max Unit
19 ns
180 ns
90 ns
65 ns
Table 7. Source drain diode
Symbol
Parameter
ISD
ISDM
VSD
trr
Qrr
IRRM
Source-drain current
Source-drain current (pulsed)
Forward on voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Test conditions
Min Typ Max Unit
ISD=120A, VGS=0
ISD=120A, di/dt = 100A/µs,
VDD=20 V, Tj=150°C
(see Figure 18)
120
480
1.5
67
130
4
A
A
V
ns
nC
A
5/14
5 Page STB200N4F3 - STP200N4F3
Package mechanical data
TO-220 mechanical data
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mm inch
Dim
Min Typ Max Min Typ Max
A 4.40
4.60
0.173
0.181
b 0.61
0.88
0.024
0.034
b1 1.14
1.70
0.044
0.066
c 0.49
0.70
0.019
0.027
D 15.25
15.75
0.6
0.62
D1 1.27
0.050
E 10
10.40
0.393
0.409
e 2.40
2.70
0.094
0.106
e1 4.95
F 1.23
5.15
1.32
0.194
0.048
0.202
0.051
H1 6.20
6.60
0.244
0.256
J1 2.40
2.72
0.094
0.107
L 13
14 0.511
0.551
L1 3.50
3.93
0.137
0.154
L20 16.40
0.645
L30 28.90
1.137
∅P 3.75
3.85
0.147
0.151
Q 2.65
2.95
0.104
0.116
11/14
11 Page |
Páginas | Total 14 Páginas | |
PDF Descargar | [ Datasheet STP200N4F3.PDF ] |
Número de pieza | Descripción | Fabricantes |
STP200N4F3 | N-channel Power MOSFET | STMicroelectronics |
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