PDF PESD5V0L2UU Data sheet ( Hoja de datos )

Número de pieza	PESD5V0L2UU
Descripción	(PESD5V0L2UU / PESD6V0L2UU) Low capacitance unidirectional ESD protection diodes
Fabricantes	NXP Semiconductors
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No Preview Available ! PESD5V0L2UU; PESD6V0L2UU Low capacitance unidirectional ESD protection diodes Rev. 01 — 11 March 2009 Product data sheet www.datasheet4u.com 1. Product proﬁle 1.1 General description Low capacitance unidirectional double ElectroStatic Discharge (ESD) protection diodes in a very small Surface-Mounted Device (SMD) plastic package designed to protect up to two signal lines from the damage caused by ESD and other transients. Table 1. Product overview Type number Package NXP PESD5V0L2UU SOT323 PESD6V0L2UU JEITA SC-70 Package conﬁguration very small 1.2 Features I Unidirectional ESD protection of up to two lines I Low diode capacitance: Cd = 34 pF I Max. peak pulse power: PPP = 70 W I Low clamping voltage: VCL = 13 V I Ultra low leakage current I ESD protection up to 30 kV I IEC 61000-4-2; level 4 (ESD) I IEC 61000-4-5 (surge); IPP = 6.5 A I AEC-Q101 qualiﬁed 1.3 Applications I Audio and video equipment I Computers and peripherals I Cellular handsets and accessories I Communication systems I Portable electronics I Subscriber Identity Module (SIM) card protection 1.4 Quick reference data Table 2. Quick reference data Tamb = 25 °C unless otherwise speciﬁed. Symbol Parameter Conditions VRWM reverse standoff voltage PESD5V0L2UU PESD6V0L2UU Min Typ Max Unit - - 5.0 V - - 6.0 V 1 page NXP Semiconductors PESD5V0L2UU; PESD6V0L2UU Low capacitance unidirectional ESD protection diodes 6. Characteristics www.datasheet4u.com Table 9. Characteristics Tamb = 25 °C unless otherwise speciﬁed. Symbol Parameter Conditions Min Typ Max Unit VRWM reverse standoff voltage PESD5V0L2UU - - 5.0 V PESD6V0L2UU - - 6.0 V IRM reverse leakage current PESD5V0L2UU VRWM = 4.0 V PESD6V0L2UU VRWM = 4.3 V PESD5V0L2UU VRWM = 5.0 V PESD6V0L2UU VRWM = 6.0 V VBR breakdown voltage IR = 5 mA PESD5V0L2UU - 20 90 nA - 1.5 18 nA - 430 - nA - 310 - nA 5.8 6.2 6.6 V PESD6V0L2UU 6.4 6.8 7.2 V Cd diode capacitance f = 1 MHz; VR = 0 V PESD5V0L2UU [1] - 19 23 pF [2] - 38 46 pF PESD6V0L2UU [1] - 17 20 pF [2] - 34 40 pF VCL clamping voltage IPP = 5.5 A PESD5V0L2UU [3][4] - - 13 V PESD6V0L2UU - - 13.5 V rdif differential resistance IR = 5 mA PESD5V0L2UU - - 25 Ω PESD6V0L2UU - - 30 Ω [1] Bidirectional conﬁguration: measured from pin 1 to 2 or pin 2 to 1. [2] Unidirectional conﬁguration: measured from pin 1 to 3 or pin 2 to 3. [3] Non-repetitive current pulse 8/20 µs exponential decay waveform according to IEC 61000-4-5. [4] Measured from pin 1 or 2 to pin 3. PESD5V0L2UU_PESD6V0L2UU_1 Product data sheet Rev. 01 — 11 March 2009 © NXP B.V. 2009. All rights reserved. 5 of 13 5 Page NXP Semiconductors PESD5V0L2UU; PESD6V0L2UU Low capacitance unidirectional ESD protection diodes 12. Revision history www.datasheet4u.com Table 11. Revision history Document ID Release date PESD5V0L2UU_PESD6V0L2UU_1 20090311 Data sheet status Product data sheet Change notice - Supersedes - PESD5V0L2UU_PESD6V0L2UU_1 Product data sheet Rev. 01 — 11 March 2009 © NXP B.V. 2009. All rights reserved. 11 of 13 11 Page

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