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PDF STAC3932B Data sheet ( Hoja de datos )
| Número de pieza | STAC3932B | |
| Descripción | RF power transistors HF/VHF/UHF N-channel MOSFETs | |
| Fabricantes | ST Microelectronics | |
| Logotipo |  |
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STAC3932B
HF/VHF/UHF RF power N-channel MOSFET
STAC244B
Air cavity
Figure 1. Pin connection
Datasheet - production data
Features
• Excellent thermal stability
• Common source push-pull configuration
• POUT = 580 W typ. with 24.6 dB gain @ 123
MHz
• In compliance with the 2002/95/EC European
directive
Description
The STAC3932B is an N-channel MOS field-effect
RF power transistor. It is intended for use in 100 V
DC large signal applications up to 250 MHz.
1
1
2
3
3
1. Drain
2. Source (bottom side)
3. Gate
Table 1. Device summary
Order code
Marking
Base qty.
Package
STAC3932B
STAC3932(1)
20
STAC244B
1. For more details please refer to Chapter 8: Marking, packing and shipping specifications.
Packaging
Plastic tray
July 2013
This is information on a product in full production.
DocID15449 Rev 6
1/17
www.st.com
1 page  
STAC3932B
3 Impedances
Figure 2. Impedance data
D
Typical Input
Impedance
G
Zin
ZDL
Typical Drain
Load Impedance
Impedances
S
Note:
Freq.
123 MHz (pulse)
123 MHz (CW)
64 MHz
Table 7. Impedance data
ZIN (Ω)
1.0 - j 4.80
0.8 - j 3.45
1.4 - j 10.0
Measured gate-to-gate and drain-to-drain, respectively.
ZDL (Ω)
6.3 + j 10.5
5.0 + j 13.0
12.8 + j 14.0
DocID15449 Rev 6
5/17
17
5 Page 
STAC3932B
Typical performance
Figure 10. Zero temperature coefficient point
Figure 11. Output power and efficiency vs. input power (CW)
3RXW
(II
)UHT 0+]
9GG 9
,GT [P$
,QSXWSRZHU :
Figure 12. Gain vs. output power (CW)
)UHT 0+]
9GG 9
,GT [P$
2XWSXWSRZHU :
AM01108v1
$0 Y
$0Y
DocID15449 Rev 6
11/17
17
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| Páginas | Total 17 Páginas | |
| PDF Descargar | [ Datasheet STAC3932B.PDF ] | |
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