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PDF LET9002 Data sheet ( Hoja de datos )
| Número de pieza | LET9002 | |
| Descripción | RF POWER TRANSISTORS Ldmos Enhanced Technology in Plastic Package | |
| Fabricantes | STMicroelectronics | |
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LET9002
RF POWER TRANSISTORS
Ldmos Enhanced Technology in Plastic Package
TARGET DATA
N-CHANNEL ENHANCEMENT-MODE LATERAL
MOSFETs
• EXCELLENT THERMAL STABILITY
• COMMON SOURCE CONFIGURATION
• POUT = 2 W with 17 dB gain @ 960 MHz / 26 V
• NEW LEADLESS PLASTIC PACKAGE
• ESD PROTECTION
• SUPPLIED IN TAPE & REEL OF 3K UNITS
DESCRIPTION
The LET9002 is a common source N-Channel, en-
hancement-mode lateral Field-Effect RF power
transistor designed for broadband commercial and
industrial applications at frequencies up to 1000
MHz. The LET9002 is designed for high gain and
broadband performance operating in common
source mode at 26 V. LET9002 boasts the
excellent gain, linearity and reliability of ST’s latest
LDMOS technology mounted in the innovative
leadless SMD plastic package, PowerFLAT™.
It is ideal for digital cellular BTS applications
requiring high linearity.
PowerFLAT™(5x5)
ORDER CODE
LET9002
BRANDING
9002
PIN CONNECTION
TOP VIEW
ABSOLUTE MAXIMUM RATINGS (TCASE = 25 °C)
Symbol
Parameter
V(BR)DSS Drain-Source Voltage
VGS Gate-Source Voltage
ID Drain Current
PDISS Power Dissipation (@ Tc = 70°C)
Tj Max. Operating Junction Temperature
TSTG
Storage Temperature
THERMAL DATA
Rth(j-c) Junction -Case Thermal Resistance
Value
65
-0.5 to +15
0.25
4
150
-65 to +150
20
Unit
V
V
A
W
°C
°C
°C/W
April, 15 2003
1/4
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet LET9002.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| LET9002 | RF POWER TRANSISTORS Ldmos Enhanced Technology in Plastic Package | STMicroelectronics |
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