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PDF LET9045S Data sheet ( Hoja de datos )

Número de pieza LET9045S
Descripción RF POWER TRANSISTORS Ldmos Enhanced Technology in Plastic Package
Fabricantes STMicroelectronics　
Logotipo STMicroelectronics Logotipo



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No Preview Available ! LET9045S Hoja de datos, Descripción, Manual

LET9045S
RF POWER TRANSISTORS
Ldmos Enhanced Technology in Plastic Package
TARGET DATA
N-CHANNEL ENHANCEMENT-MODE LATERAL
MOSFETs
• EXCELLENT THERMAL STABILITY
• COMMON SOURCE CONFIGURATION
• POUT = 45 W with 17 dB gain MIN @ 945 MHz /
28V
• NEW RF PLASTIC PACKAGE
• HIGH GAIN
• ESD PROTECTION
• AVAILABLE IN TAPE & REEL with TR SUFFIX
PowerSO-10RF
(straight lead)
ORDER CODE
LET9045S
BRANDING
LET9045S
DESCRIPTION
The LET9045S is a common source N-Channel,
enhancement-mode lateral Field-Effect RF power
transistor. It is designed for high gain, broad band
commercial and industrial applications. It operates
at 28 V in common source mode at frequencies up
to 1 GHz. LET9045S boasts the excellent gain,
linearity and reliability of ST’s latest LDMOS
technology mounted in the first true SMD plastic
RF power package, PowerSO-10RF. LET9045S’s
superior linearity performance makes it an ideal
solution for base station applications.
PIN CONNECTION
SOURCE
GATE
DRAIN
The PowerSO-10 plastic package, designed to
offer high reliability, is the first ST JEDEC
approved, high power SMD package. It has been
specially optimized for RF needs and offers
excellent RF performances and ease of assembly.
Mounting recommendations are available in
www.st.com/rf/ (look for application note AN1294)
ABSOLUTE MAXIMUM RATINGS (TCASE = 25°C)
Symbol
Parameter
V(BR)DSS Drain-Source Voltage
VGS Gate-Source Voltage
ID Drain Current
PDISS Power Dissipation
Tj Max. Operating Junction Temperature
TSTG
Storage Temperature
THERMAL DATA
Rth(j-c) Junction -Case Thermal Resistance
February, 27 2003
Value
65
-0.5 to +15
5
160
165
-65 to +150
0.85
Unit
V
V
A
W
°C
°C
°C/W
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1 page




LET9045S pdf
TEST CIRCUIT SCHEMATIC
LET9045S
VGG +
+
RF
IN
+ VDD
+
RF
OUT
TEST CIRCUIT COMPONENT PART LIST
COMPONENT
DESCRIPTION
C1, C8, C9, C13
47pF ATC 100B SURFACE MOUNT CERAMIC CHIP CAPACITOR
C2, C7
0.8-8.0pF GIGA TRIM VARIABLE CAPACITOR
C3, C4, C5, C6
7.5pF ATC 100B SURFACE MOUNT CERAMIC CHIP CAPACITOR
C10 1000pF ATC 100B SURFACE MOUNT CERAMIC CHIP CAPACITOR
C11, C15
0.1µF / 500V SURFACE MOUNT CERAMIC CHIP CAPACITOR
C12 10µF / 50V ALUMINUM ELECTROLYTIC RADIAL LEAD CAPACITOR
C14 100pF ATC 100B SURFACE MOUNT CERAMIC CHIP CAPACITOR
C16 220µF / 63V ALUMINUM ELECTROLYTIC RADIAL LEAD CAPACITOR
R1 18KΩ, 1W SURFACE MOUNT CHIP RESISTOR
R2 4.7MΩ, 1W SURFACE MOUNT CHIP RESISTOR
R3 120Ω, 2W SURFACE MOUNT CHIP RESISTOR
FB1, FB2
SHIELD BEAD SURFACE MOUNT EMI
L1, L2
INDUCTOR, 5TURNS AIR WOUND #22AWG, ID=0.059[1.49], NYLON COATED
MAGNET WIRE
5/9

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