PDF MW7IC2040NBR1 Data sheet ( Hoja de datos )

Número de pieza	MW7IC2040NBR1
Descripción	RF LDMOS Wideband Integrated
Fabricantes	Motorola Semiconductor Products
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No Preview Available ! Freescale Semiconductor Technical Data Document Number: MW7IC2040N Rev. 0, 2/2009 RF LDMOS Wideband Integrated Power Amplifiers The MW7IC2040N wideband integrated circuit is designed with on - chip matching that makes it usable from 1805 to 1990 MHz. This multi - stage www.datasshtreuect4tuur.ceoims rated for 24 to 32 Volt operation and covers all typical cellular base station modulations. • Typical Single - Carrier W - CDMA Performance: VDD = 28 Volts, IDQ1 = 130 mA, IDQ2 = 330 mA, Pout = 4 Watts Avg., f = 1932.5, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. Power Gain — 32 dB Power Added Efficiency — 17.5% ACPR @ 5 MHz Offset — - 50 dBc in 3.84 MHz Bandwidth • Capable of Handling 5:1 VSWR, @ 32 Vdc, 1960 MHz, 50 Watts CW Output Power (3 dB Input Overdrive from Rated Pout) • Stable into a 3:1 VSWR. All Spurs Below - 60 dBc @ 100 mW to 40 Watts CW Pout. • Typical Pout @ 1 dB Compression Point ' 30 Watts CW GSM EDGE Application • T4y3p0PicmoawAl eG, rPSGoMuatiEn=D—1G63EW3PadettBrsfoArvmga.,n1c8e0: 5V-D1D8=8028MVHozlts, IDQ1 = 90 mA, IDQ2 = Power Added Efficiency — 35% Spectral Regrowth @ 400 kHz Offset = - 62 dBc Spectral Regrowth @ 600 kHz Offset = - 77 dBc EVM — 1.5% rms GSM Application • Typical GSM Performance: VDD = 28 Volts, IDQ1 = 90 mA, IDQ2 = 430 mA, PoPuto=we4r0GWaaintts—C3W1, 1805 dB - 1880 MHz and 1930 - 1990 MHz Power Added Efficiency — 50% Features • Characterized with Series Equivalent Large - Signal Impedance Parameters and Common Source S - Parameters • On - Chip Matching (50 Ohm Input, DC Blocked, >3 Ohm Output) • Integrated Quiescent Current Temperature Compensation with Enable/ Disable Function (1) • Integrated ESD Protection • 225°C Capable Plastic Package • RoHS Compliant • In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel. VDS1 MW7IC2040NR1 MW7IC2040GNR1 MW7IC2040NBR1 1930- 1990 MHz, 1805 - 1880 MHz, 4 W AVG., 28 V SINGLE W - CDMA, GSM EDGE, GSM RF LDMOS WIDEBAND INTEGRATED POWER AMPLIFIERS CASE 1886 - 01 TO - 270 WB - 16 PLASTIC MW7IC2040NR1 CASE 1887 - 01 TO - 270 WB - 16 GULL PLASTIC MW7IC2040GNR1 CASE 1329 - 09 TO - 272 WB - 16 PLASTIC MW7IC2040NBR1 GND VDS1 VGS2 VGS1 NC RFin 1 2 3 4 5 6 16 GND 15 NC 14 RFout/VDS2 NC 7 RFin RFout/VDS2 VGS1 8 VGS2 9 VDS1 10 13 NC VGS1 Quiescent Current GND 11 12 GND VGS2 Temperature Compensation (1) (Top View) VDS1 Note: Exposed backside of the package is the source terminal for the transistors. Figure 1. Functional Block Diagram Figure 2. Pin Connections 1. Refer to AN1977, Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family and to AN1987, Quiescent Current Control for the RF Integrated Circuit Device Family. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1977 or AN1987. © Freescale Semiconductor, Inc., 2009. All rights reserved. RF Device Data Freescale Semiconductor MW7IC2040NR1 MW7IC2040GNR1 MW7IC2040NBR1 1 1 page VDD1 Z3 RF www.datasINhPeUeTt4u.Zc1om Z2 C11 C1 Z4 Z5 Z6 Z7 C14 VGG1 VGG2 R1 R2 C12 C10 C2 1 2 3 G1 4 G2 5 NC 6 7 NC 8 G2 9 G1 10 11 DUT 16 NC 15 14 Z10 Quiescent Current Temperature Compensation NC 13 12 + C13 Z13 VDD2 C3 Z8 C17 C6 C15 Z11 Z12 Z15 C7 RF OUTPUT Z16 C5 C16 Z9 Z14 C4 C18 C8 C9 Z1 Z2 Z3 Z4 Z5 Z6 Z7 Z8, Z9 0.0826″ x 0.5043″ Microstrip 0.0826″ x 0.3639″ Microstrip 0.0826″ x 0.4258″ Microstrip 0.0826″ x 0.3639″ Microstrip 0.0826″ x 0.3060″ Microstrip 0.0826″ x 0.9290″ Microstrip 0.0600″ x 0.1273″ Microstrip 0.0800″ x 1.3684″ Microstrip Z10 Z11 Z12 Z13, Z14 Z15 Z16 PCB 0.3419″ x 0.1725″ Microstrip 0.3419″ x 0.4671″ Microstrip 0.0830″ x 0.4220″ Microstrip 0.0830″ x 0.2855″ Microstrip 0.0830″ x 0.9030″ Microstrip 0.0830″ x 0.2499″ Microstrip Rogers RO4350, 0.030″, εr = 3.5 Figure 3. MW7IC2040NR1(GNR1)(NBR1) Test Circuit Schematic — 1930 - 1990 MHz Table 6. MW7IC2040NR1(GNR1)(NBR1) Test Circuit Component Designations and Values — 1930 - 1990 MHz Part Description Part Number Manufacturer C1, C2, C3, C4, C5 6.8 pF Chip Capacitors ATC100B6R8CT500XT ATC C6, C7, C8, C9, C10, C11 10 μF, 50 V Chip Capacitors GRM55DR61H106KA88L Murata C12 2.2 μF, 16 V Chip Capacitor C1206C225K4RAC Kemet C13 470 μF, 63 V Electrolytic Capacitor, Radial MCGPR63V477M13X26- RH Multicomp C14, C16 0.8 pF Chip Capacitors ATC100B0R8BT500XT ATC C15 1 pF Chip Capacitor ATC100B1R0BT500XT ATC C17, C18 1 μF, 50 V Chip Capacitors GRM21BR71H105KA12L Murata R1, R2 5.6 KΩ, 1/4 W Chip Resistors CRCW12065601FKEA Vishay RF Device Data Freescale Semiconductor MW7IC2040NR1 MW7IC2040GNR1 MW7IC2040NBR1 5 5 Page ALTERNATIVE PEAK TUNE LOAD PULL CHARACTERISTICS 53 52 P3dB = 47.74 dBm (59 W) Ideal 51 50 P1dB = 47.06 dBm (51 W) 49 www.datasheet4u.com 48 47 Actual 46 45 44 VDD = 28 Vdc, IDQ1 = 130 mA, IDQ2 = 330 mA Pulsed CW, 10 μsec(on), 10% Duty Cycle, f = 1930 MHz 43 11 12 13 14 15 16 17 18 19 20 21 Pin, INPUT POWER (dBm) NOTE: Load Pull Test Fixture Tuned for Peak P1dB Output Power @ 28 V Test Impedances per Compression Level Zsource Ω Zload Ω P1dB 49.30 + j8.40 3.60 - j4.50 Figure 16. Pulsed CW Output Power versus Input Power @ 28 V @ 1930 MHz 53 52 P3dB = 47.88 dBm (61 W) Ideal 51 50 P1dB = 47.37 dBm (55 W) 49 48 47 Actual 46 45 44 VDD = 28 Vdc, IDQ1 = 130 mA, IDQ2 = 330 mA Pulsed CW, 10 μsec(on), 10% Duty Cycle, f = 1990 MHz 43 13 14 15 16 17 18 19 20 21 22 23 Pin, INPUT POWER (dBm) NOTE: Load Pull Test Fixture Tuned for Peak P1dB Output Power @ 28 V Test Impedances per Compression Level Zsource Ω Zload Ω P1dB 50.0 - j4.90 3.40 - j5.10 Figure 17. Pulsed CW Output Power versus Input Power @ 28 V @ 1990 MHz RF Device Data Freescale Semiconductor MW7IC2040NR1 MW7IC2040GNR1 MW7IC2040NBR1 11 11 Page

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