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부품번호 | STAP57045 기능 |
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기능 | RF power transistor | ||
제조업체 | ST Microelectronics | ||
로고 | |||
전체 17 페이지수
www.datasheet4u.com
STAP57045
RF power transistor, LdmoST plastic family
N-channel enhancement-mode lateral MOSFETs
Preliminary Data
Features
■ Excellent thermal stability
■ Common source configuration
■ POUT = 45 W with 13 dB gain @ 945 MHz / 28 V
■ ST advanced PowerSO-10RF-STAP package
Description
The STAP57045 is a common source N-channel,
enhancement-mode lateral field-effect RF power
transistor. It is designed for high gain, broad band
commercial and industrial applications. It
operates at 28 V in common source mode at
frequencies of up to 1 GHz. STAP57045 boasts
the excellent gain, linearity and reliability of ST’s
latest LDMOS technology mounted in STAP1
plastic RF power package.
STAP package has been specially optimized for
RF needs and offers excellent performances and
ease of assembly.
Mounting recommendations are available in
www.st.com/rf/ (look for application note AN1294)
STAP1
Figure 1. Pin connection
!-
DRAIN
GATE
SOURCE
!-
Table 1.
Device summary
Order code
STAP57045
Package
STAP1
Packing
Tube
March 2009
Rev 1
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to
change without notice.
1/17
www.st.com
17
Electrical characteristics
2 Electrical characteristics
STAP57045
TCASE = +25 °C
www.datasheet4u.com
2.1 Static
Table 4. Static
Symbol
V(BR)DSS
IDSS
IGSS
VGS(Q)
VDS(ON)
gFS
CISS
COSS
CRSS
VGS = 0 V
VGS = 0 V
VGS = 20 V
VDS = 28 V
VGS = 10 V
VDS = 10 V
VGS = 0 V
VGS = 0 V
VGS = 0 V
Test conditions
IDS = 1 mA
VDS = 28 V
VDS = 0 V
ID = 250 mA
ID = 3 A
ID = 4 A
VDS = 28 V
VDS = 28 V
VDS = 28 V
f = 1 MHz
f = 1 MHz
f = 1 MHz
Min Typ Max Unit
65 V
1 μA
1 μA
2.0 5.0 V
0.7 0.9 V
2.0 2.7
mho
86 pF
47 pF
3.6 pF
2.2
Dynamic
Table 5. Dynamic
Symbol
Test conditions
Min. Typ. Max. Unit
P1dB VDD = 28 V IDQ = 250 mA
f = 945 MHz 45
GP VDD = 28 V IDQ = 250 mA POUT = 45 W f = 945 MHz 13
ηD VDD = 28 V IDQ = 250 mA POUT = 45 W f = 945 MHz 50
Load VDD = 28 V IDQ = 250 mA POUT = 45 W f = 945 MHz 10:1
mismatch All phase angles
14.5
W
dB
%
VSWR
4/17
4페이지 STAP57045
Typical performance
PD57045S
www.datashFeiegt4uur.eco7m. Output power vs input power
Figure 8. Input return loss vs output power
60
Gp
50
16
Pout
15
40 14
30 13
20 12
VDD = 28 V
10
IDQ = 250 mA
11
f = 945 MHz
0 10
0 0.5 1 1.5 2 2.5 3 3.5
Pin, INPUT POWER (W)
0
-10
-20
-30
-40
0
f = 945 MHz
Vdd = 28 V
Idq = 250 mA
10 20 30 40 50
Pout, OUTPUT POWER (W)
60
Figure 9. Power gain vs output power
Figure 10. Drain efficiency vs output power
17
16
15
14
13
12
11
10
0.1
Idq = 450 mA
Idq = 250 mA
Idq = 150 mA
Idq = 75 mA
Vdd = 28 V
f = 945 Mhz
1 10
Pout, OUTPUT POWER (W)
100
60
50
40
30
20
f = 945 MHz
10
Vdd = 28 V
Idq = 250 mA
0
0 10 20 30 40 50 60
Pout, OUTPUT POWER (W)
7/17
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부품번호 | 상세설명 및 기능 | 제조사 |
STAP57045 | RF power transistor | ST Microelectronics |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |