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PDF STAP57100 Data sheet ( Hoja de datos )
| Número de pieza | STAP57100 | |
| Descripción | RF power transistor | |
| Fabricantes | ST Microelectronics | |
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STAP57100
www.datasheet4u.com
RF power transistor the LdmoST family
Preliminary Data
Features
■ Excellent thermal stability
■ Common source configuration push-pull
■ POUT = 100 W with 14 dB gain @ 860 MHz
■ ST advanced PowerSO-10RF - STAP package
■ Load mismatch 10:1 all phases
■ In compliance with the 2002/95/EC european
directive
Description
The STAP57100 is a common source N-channel
enhancement-mode lateral field-effect RF power
transistor designed for broadband commercial
and industrial applications at frequencies up to
1.0 GHz. The STAP57100 is designed for high
gain and broadband performance operating in
common source mode at 28 V.
Figure 1. Pin connection
1
2
4
5
1, 2 Drain
3 Source
4, 5 Gate
3
Table 1.
Device summary
Order code
STAP57100
Package
STAP2
Branding
STAP57100
April 2009
Rev 1
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to
change without notice.
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www.st.com
8
1 page  
STAP57100
4 Package mechanical data
Package mechanical data
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In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK® packages, depending on their level of environmental compliance. ECOPACK®
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK® is an ST trademark.
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