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Número de pieza | STAP1011-180 | |
Descripción | RF Power Transistor | |
Fabricantes | ST Microelectronics | |
Logotipo | ||
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STAP1011-180
RF power transistor the LdmoST family,
N-channel enhancement-mode lateral MOSFETs
Features
■ Excellent thermal stability
■ Common source configuration push-pull
■ POUT = 180W with 10 dB gain @ 1030 MHz
36 V/100 µsec - 10%
■ Plastic package
■ In compliance with the 2002/95/EC european
directive
Description
The STAP1011-180 is a common source
N-channel enhancement-mode lateral field-effect
RF power transistor. It is designed for 1030-1090
MHz avionics applications.
STAP1011-180 is mounted in STAP ST advanced
PowerSO-10RF package.
The STAP package was designed to offer high
reliability and power capability. It has been
specially optimized for RF needs and offers
excellent RF performances and ease of assembly.
Figure 1. Pin connection
1
2
4
5
1, 2 Drain
3 Source
4, 5 Gate
3
Table 1. Device summary
Order code
STAP1011-180
Package
STAP2
Packaging
Tube
May 2009
Doc ID 15613 Rev 1
1/9
www.st.com
9
1 page STAP1011-180
4 Typical performance
Typical performance
www.datashFeiegt4uur.eco3m. Output power & efficiency vs input Figure 4. Gain vs output power & bias
power
current
250 60
Pout Efficiency
55
200 50
45
150 40
35
100 30
Freq = 1030 MHz
25
50
Vdd = 36 V
20
100 µsec - 10%
15
0 10
0 5 10 15 20 25
Pin (W)
Figure 5. Output power vs drain voltage
Pout
(W) 200
180
160
140
120
100 Freq = 1030 MHz
80 Pin = 17 W
Idq = 300 mA
60 100µsec - 10%
40
20
0
26 28 30 32 34 36 38
Vdd (V)
11.4
11.2
11
10.8
10.6
10.4
10.2
10
9.8
9.6
9.4
9.2
0
Freq = 1030 MHz
Vdd = 36V
100µsec - 10%
200mA 300mA 400mA
25 50 75 100 125 150 175 200 225
Pout (W)
Doc ID 15613 Rev 1
5/9
5 Page |
Páginas | Total 9 Páginas | |
PDF Descargar | [ Datasheet STAP1011-180.PDF ] |
Número de pieza | Descripción | Fabricantes |
STAP1011-180 | RF Power Transistor | ST Microelectronics |
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