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부품번호 | STAP57060 기능 |
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기능 | RF power transistor | ||
제조업체 | ST Microelectronics | ||
로고 | |||
전체 16 페이지수
www.datasheet4u.com
STAP57060
RF power transistor, LdmoST plastic family
N-channel enhancement-mode lateral MOSFETs
Features
■ Excellent thermal stability
■ Common source configuration
■ POUT = 60 W with 14.3 dB gain @ 945 MHz /
28 V
■ ST advanced PowerSO-10 RF-STAP-package
Description
The STAP57060 is a common source N-Channel,
enhancement-mode lateral Field-Effect RF power
MOSFET. It is designed for high gain, broad band
commercial and industrial applications. It operates
at 28 V in common source mode at frequencies of
up to 1 GHz. STAP57060 boasts the excellent
gain, linearity and reliability of ST’s latest LDMOS
technology mounted in STAP1 plastic RF power
package.
STAP package has been specially optmized for
RF needs and offers excellent performances and
ease of assembly.
Mounting recommendations are available in
www.st.com/rf/ (look for application note
AN1294)
Figure 1. Pin connection
DRAIN
GATE
SOURCE
Table 1. Device summary
Order codes
STAP57060
Package
STAP1
May 2009
Doc ID 15708 Rev 1
Packaging
Tube
1/16
www.st.com
16
Electrical characteristics
3 Electrical characteristics
STAP57060
(TCASE = 25 °C)
www.datasheet4u.com
3.1 Static
Table 4. Static
Symbol
V(BR)DSS
IDSS
IGSS
VGS(Q)
VDS(ON)
GFS
CISS
COSS
CRSS
VGS = 0 V
VGS = 0 V
VGS = 20 V
VDS = 28 V
VGS = 10 V
VDS = 10 V
VGS = 0 V
VGS = 0 V
VGS = 0 V
Test conditions
IDS = 1 mA
VDS = 28 V
VDS = 0 V
ID = 100 mA
ID = 3 A
ID = 3 A
VDS = 28 V
VDS = 28 V
VDS = 28 V
Min.
65
2.0
f = 1 MHz
f = 1 MHz
f = 1 MHz
2.5
Typ.
0.7
83
58
3
Max.
1
1
4.0
0.8
Unit
V
µA
µA
V
V
mho
pF
pF
pF
3.2
Dynamic
Table 5. Dynamic
Symbol
Test conditions
Min. Typ. Max.
POUT VDD = 28 V IDQ = 100 mA
f = 945 MHz
GPS VDD = 28 V IDQ = 100 mA POUT = 60 W f = 945 MHz
ηD VDD = 28 V IDQ = 100 mA POUT = 60 W f = 945 MHz
Load
mismatch
VDD = 28 V IDQ = 100 mA
f = 945 MHz
All phase angles
POUT = 60 W
60
5:1
14.3
54
-
Unit
W
dB
%
VSWR
4/16
Doc ID 15708 Rev 1
4페이지 STAP57060
Typical performance
Figure 9. Input return loss vs output power Figure 10. Output power vs bias current
RL (dB)
0
www.datasheet4u.com
-10
-20
890MHz
960MHz
925MHz
945MHz
-30
-40
0
VDS=28V
IDQ=100mA
10 20 30 40 50 60 70 80
Pout (W)
Figure 11. Drain efficiency vs bias current
Pout (W)
80
70
60
50
890MHz
960MHz
925MHz
945MHz
40
30
20
Pin=32.8dBm
VDS=28V
10
0 0.5 1 1.5 2 2.5
IDQ (A)
Figure 12. Output power vs supply voltage
Nd (%)
70
60 890MHz
50 960MHz
40
945MHz
925MHz
Pout (W)
70
60
50
40
945MHz
925MHz
890MHz
960MHz
30 30
20
Pin=32.8dBm
VDS=28V
10
0 0.5 1 1.5 2 2.5
IDQ (A)
Figure 13. Drain efficiency vs supply voltage
20
10
10
Pin=32.8dBm
IDQ=100mA
15 20 25
VDS (V)
30
Figure 14. Output power vs gate-source
voltage
Nd (%)
70
60
50
40
30
20
10
10
890MHz
945MHz
925MHz
960MHz
Pin=32.8dBm
IDQ=100mA
15 20 25
VDS (V)
30
Pout (W)
80
70
60
50
40
30
20
10
0
1
925MHz
890MHz
960MHz
9455MHz
23
VGS (V)
Pin=32.8dBm
VDS=28v
45
Doc ID 15708 Rev 1
7/16
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STAP57060 | RF power transistor | ST Microelectronics |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |