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부품번호 | NJG1110PB1 기능 |
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기능 | Dual LNA / FFP12-B1 | ||
제조업체 | JRC | ||
로고 | |||
전체 17 페이지수
www.DataSheet4U.com
NJG1110PB1
PDC Dual Band LNA GaAs MMIC
n GENERAL DESCRIPTION
The NJG1110PB1 is a dual band low noise amplifier (2 input
2 output) GaAs MMIC for 800MHz and 1500MHz band. The
band switching between 800MHz and 1500MHz is established
by one bit control signal by using built-in inverter circuit.
An ultra small & thin FFP12 (Flip-Chip Fine package) package
is adopted.
n PACKAGE OUTLINE
NJG1110PB1
n FEATURES
lLow voltage operation
lLow current consumption
lLow control current
lHigh gain
lLow noise figure
lHigh output IP3
lUltra small & ultra thin package
n PIN CONFIGURATION
+2.8V typ.
2.7mA typ.
20uA typ.
18dB typ. @f=820MHz
16dB typ. @f=1490MHz
1.2dB typ. @f=820MHz
1.1dB typ. @f=1490MHz
+10dBm typ. @f=820MHz
+13dBm typ. @f=1490MHz
FFP12-B1 (Package size: 2.0x2.0x0.85mm)
Note: The specifications and description listed in this catalog are subject to change without prior notice.
-1-
NJG1110PB1
www.DataSheet4U.com
n TERMINAL INFORMATION
Pin Symbol
Description
1
VCTL
Control Voltage terminal to select 800MHz band or 1.5GHz band to
celect.
2 GND Ground terminal (0V).
3 GND Ground terminal (0V).
Output terminal of 1.5GHz band. This terminal is also the power supply
4 RFOUT2 terminal of the LNA, please use inductor (L5) to connect power supply.
(Please see application circuit.)
5 GND Ground terminal (0V).
Output terminal of 800MHz band. This terminal is also the power supply
6 RFOUT1 terminal of the LNA, please use inductor (L3) to connect power supply.
(Please see application circuit.)
7 GND Ground terminal (0V).
8 GND Ground terminal (0V).
9 VINV Power supply terminal of the inverter circuit.
10
RFIN1
Output terminal of 800MHz band. The DC blocking capacitor is not
required.
11 GND Ground terminal (0V).
12
RFIN2
Output terminal of 1.5GHz band. The DC blocking capacitor is not
required.
NOTE:
1) Ground terminal (2, 3, 5, 8, 11pin) should be connected to ground plane by multiple via
holes for good grounding.
2) Please connect bypass capacitors possible close to inductors (L3, L5)..
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4페이지 www.DataSheet4U.com
n TYPICAL CHARACTERISTICS (800MHz Band)
NJG1110PB1
IDD vs. Ta
( V =V =2.8V,V =0V,IDD=2.6mA,freq=820MHz )
3.0 DD INV
CTL
2.5
2.0
1.5
1.0
-40
-20
0
20 40 60 80
Ta ( oC)
11.0
10.5
10.0
9.5
9.0
8.5
8.0
7.5
7.0
-40
OIP3,IIP3 vs. Ta
( V =V =2.8V,V =0V,IDD=2.6mA )
DD INV
CTL
OIP3
f=810MHz
f=840MHz
f=885MHz
-5.0
-5.5
-6.0
-6.5
-7.0
-7.5
-8.0
-8.5
IIP3
-9.0
-20 0
20 40 60 80
Ta ( oC)
Gain,NF vs. Ta
( V =V =2.8V,V =0V,IDD=2.6mA )
DD INV
CTL
20 2.4
Gain
18 2.0
16 1.6
NF(De-embedded PCB,Connector LOSS)
14 1.2
12
10
-40
-20
0 20 40
Ta ( oC)
f=810MHz
f=840MHz
f=885MHz
0.8
0.4
60 80
P-1dB(IN),P-1dB(OUT) vs. Ta
( V =V =2.8V,V =0V,IDD=2.6mA,freq=820MHz )
DD INV
CTL
0 -15
-1 -16
P-1dB(OUT)
-2 -17
-3 -18
-4 -19
P-1dB(IN)
-5 -20
-6 -21
-40 -20
0
20 40 60 80
Ta ( oC)
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구 성 | 총 17 페이지수 | ||
다운로드 | [ NJG1110PB1.PDF 데이터시트 ] |
당사 플랫폼은 키워드, 제품 이름 또는 부품 번호를 사용하여 검색할 수 있는 |
구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
부품번호 | 상세설명 및 기능 | 제조사 |
NJG1110PB1 | Dual LNA / FFP12-B1 | JRC |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |