(PDF) KDV303N Datasheet

Número de pieza	KDV303N
Descripción	Digital FET
Fabricantes	Guangdong Kexin Industrial
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No Preview Available ! www.DaStaSMheDet4UT.cyomp e Digital FET, N-Channel KDV303N MOSFIECT ■ Features ● 0.68 A, 25 V. RDS(ON) = 0.45 Ω @ VGS = 4.5 V RDS(ON) = 0.6Ω @ VGS = 2.7 V. ● Very low level gate drive requirements allowing direct operation in 3V circuits. VGS(th) < 1.5V. ● Gate-Source Zener for ESD ruggedness. ＞6kV Human Body Model D GS SOT-23 2.9+0.1 -0.1 0.4+0.1 -0.1 3 12 0.95+0.1 -0.1 1.9+0.1 -0.1 Unit: mm 0.1+0.05 -0.01 11..BGasae te 22.ESmoituterrce 33..cDollreactionr ■ Absolute Maximum Ratings Ta = 25℃ Parameter Drain to Source Voltage Gate to Source Voltage Drain Current- Continuous Drain Current- pulse Power Dissipation for Single Operation Operating and Storage Junction Temperature Range Thermal Resistance, Junction-to- Ambient Symbol VDSS VGSS ID PD TJ, Tstg RθJA Rating 25 8 0.68 2 0.35 -55 to +150 357 Unit V V A A W ℃ ℃/W www.kexin.com.cn 1 1 page

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PDF KDV303N Data sheet ( Hoja de datos )