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부품번호 | BUK9520-100A 기능 |
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기능 | (BUK9520-100A / BUK9620-100A) TrenchMOS logic level FET | ||
제조업체 | NXP Semiconductors | ||
로고 | |||
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BUK9520-100A;
BUK9620-100A
TrenchMOS™ logic level FET
Rev. 01 — 7 February 2001
Product specification
1. Description
N-channel enhancement mode field-effect power transistor in a plastic package using
TrenchMOS™ technology, featuring very low on-state resistance.
Product availability:
BUK9520-100A in SOT78 (TO-220AB)
BUK9620-100A in SOT404 (D 2-PAK).
2. Features
s TrenchMOS™ technology
s Q101 compliant
s 175 °C rated
s Logic level compatible.
3. Applications
s Automotive and general purpose power switching:
c
c x 12 V, 24 V and 42 V loads
x Motors, lamps and solenoids.
4. Pinning information
Table 1: Pinning - SOT78 and SOT404, simplified outline and symbol
Pin Description
Simplified outline
1 gate (g)
2 drain (d)
mb
mb
3 source (s)
mb mounting base;
connected to drain (d)
MBK106
123
SOT78 (TO-220AB)
2
1 3 MBK116
SOT404 (D2-PAK)
Symbol
d
g
MBB076
s
Philips Semiconductors
www.DataSheet4U.com
BUK9520-100A; BUK9620-100A
TrenchMOS™ logic level FET
7. Thermal characteristics
Table 4: Thermal characteristics
Symbol Parameter
Conditions
Rth(j-a)
thermal resistance from junction to ambient
vertical in still air; SOT78 package
mounted on printed circuit board;
minimum footprint; SOT404
package
Rth(j-mb)
thermal resistance from junction to mounting Figure 4
base
7.1 Transient thermal impedance
Value
60
50
Unit
K/W
K/W
0.75 K/W
1
Zth(j-mb)
(K/W) δ = 0.5
10-1
0.2
0.1
0.05
10-2
0.02
Single Shot
10-3
10-6
10-5
10-4
10-3
03nd89
10-2
P
δ
=
tp
T
tp
T
t
10-1 tp (s)
1
Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration.
9397 750 07915
Product specification
Rev. 01 — 7 February 2001
© Philips Electronics N.V. 2001. All rights reserved.
4 of 15
4페이지 Philips Semiconductors
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BUK9520-100A; BUK9620-100A
TrenchMOS™ logic level FET
2.5
VGS(th)
(V)
2
1.5
1
max
typ
min
03aa33
10-1
ID
(A) 10-2
10-3
10-4
03aa36
min typ max
0.5 10-5
0
-60 -20 20 60 100 140 180
Tj (oC)
ID = 1 mA; VDS = VGS
Fig 9. Gate-source threshold voltage as a function of
junction temperature.
10-6
0 0.5 1 1.5 2 2.5 3
VGS (V)
Tj = 25 °C; VDS = VGS
Fig 10. Sub-threshold drain current as a function of
gate-source voltage.
120
gfs
(S)
100
03nd82
80
60
40
20
0
0 20 40 60 80
ID (A)
Tj = 25 °C; VDS = 25 V
Fig 11. Forward transconductance as a function of
drain current; typical values.
12000
C (pF)
10000
03nd87
8000
6000
4000
Ciss
2000
0
10-2
10-1
1
Coss
Crss
10 102
VDS (V)
VGS = 0 V; f = 1 MHz
Fig 12. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values.
9397 750 07915
Product specification
Rev. 01 — 7 February 2001
© Philips Electronics N.V. 2001. All rights reserved.
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부품번호 | 상세설명 및 기능 | 제조사 |
BUK9520-100A | (BUK9520-100A / BUK9620-100A) TrenchMOS logic level FET | NXP Semiconductors |
BUK9520-100B | N-channel TrenchMOS Logic Level FET | NXP Semiconductors |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |