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부품번호 | IRLU8203 기능 |
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기능 | HEXFET Power MOSFET | ||
제조업체 | International Rectifier | ||
로고 | |||
전체 10 페이지수
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PD - 94404
SMPS MOSFET
Applications
l High Frequency Isolated DC-DC
Converters with Synchronous Rectification
for Telecom and Industrial Use
l High Frequency Buck Converters for
Computer Processor Power
Benefits
VDSS
30V
IRLR8203
IRLU8203
HEXFET® Power MOSFET
RDS(on) max
ID
6.8mΩ
110A
l Ultra-Low Gate Impedance
l Very Low RDS(on) at 4.5V VGS
l Fully Characterized Avalanche Voltage
and Current
D-Pak
IRLR8203
I-Pak
IRLU8203
Absolute Maximum Ratings
Symbol
VDS
VGS
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
PD @TC = 100°C
TJ , TSTG
Parameter
Drain-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Maximum Power Dissipation
Maximum Power Dissipation
Linear Derating Factor
Junction and Storage Temperature Range
Max.
30
± 20
110
76
120
140
69
0.92
-55 to + 175
Thermal Resistance
RθJC
RθJA
RθJA
Parameter
Junction-to-Case
Junction-to-Ambient (PCB mount)*
Junction-to-Ambient
Typ.
–––
–––
–––
* When mounted on 1" square PCB (FR-4 or G-10 Material) .
For recommended footprint and soldering techniques refer to application note #AN-994
Max.
1.09
50
110
Units
V
V
A
W
W
W/°C
°C
Units
°C/W
Notes through are on page 10
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1
03/12/02
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IRLR/U8203
10000
1000
VGS = 0V, f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Ciss
Coss
Crss
100
1
10
VDS, Drain-to-Source Voltage (V)
100
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
6
ID = 12A
5
4
VDS = 24V
VDS = 15V
VDS = 6V
3
2
1
0
0 10 20 30
QG, Total Gate Charge (nC)
40
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
1000
100
TJ = 175 ° C
10
TJ = 25 ° C
1
0.1
0.2
V GS = 0 V
0.4 0.6 0.8 1.0 1.2 1.4
V SD,Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
1000
100
OPERATION IN THIS AREA
LIMITED BY R DS(on)
100µsec
1msec
10
Tc = 25°C
Tj = 175°C
Single Pulse
1
01
10msec
10 100
VDS , Drain-toSource Voltage (V)
1000
Fig 8. Maximum Safe Operating Area
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IRLR/U8203
D.U.T
+
-
RG
Peak Diode Recovery dv/dt Test Circuit
+ Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
-
-
+
• dv/dt controlled by RG
• Driver same type as D.U.T.
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
+
- VDD
Driver Gate Drive
P.W.
Period
D=
P.W.
Period
VGS=10V *
D.U.T. ISD Waveform
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. VDS Waveform Diode Recovery
dv/dt
Re-Applied
Voltage
Body Diode
Inductor Curent
Forward Drop
VDD
Ripple ≤ 5%
ISD
* VGS = 5V for Logic Level Devices
Fig 14. For N-Channel HEXFET® Power MOSFETs
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7페이지 | |||
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부품번호 | 상세설명 및 기능 | 제조사 |
IRLU8203 | HEXFET Power MOSFET | International Rectifier |
IRLU8203PBF | SMPS MOSFET | International Rectifier |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |