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PDF STD78N75F4 Data sheet ( Hoja de datos )
| Número de pieza | STD78N75F4 | |
| Descripción | Power MOSFETs | |
| Fabricantes | ST Microelectronics | |
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Features
STD78N75F4
STP78N75F4
N-channel 75 V, 0.008 Ω, 78 A TO-220, DPAK
STripFET™ DeepGATE™ Power MOSFET
Preliminary data
Type
STD78N75F4
STP78N75F4
VDSS
75 V
75 V
RDS(on) max
< 0.011 Ω
< 0.011 Ω
ID
70 A
78 A
■ N-channel enhancement mode
■ 100% avalanched rated
■ Low gate charge
■ Very low on-resistance
Application
■ Switching applications
Description
This STripFET™ DeepGATE™ Power MOSFET
technology is among the latest improvements,
which have been especially tailored to minimize
on-state Resistance, with a new gate structure,
providing superior switching performances.
3
1
DPAK
3
2
1
TO-220
Figure 1. Internal schematic diagram
$
'
Table 1. Device summary
Order codes
STD78N75F4
STP78N75F4
Marking
78N75F4
78N75F4
3
!-V
Package
DPAK
TO-220
Packaging
Tape and reel
Tube
May 2009
Doc ID 15682 Rev 1
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to
change without notice.
1/12
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Electrical characteristics
Table 7.
Symbol
Source drain diode
Parameter
Test conditions
Min. Typ. Max Unit
ISD Source-drain current
TO-220
DPAK
- 78 A
- 70 A
ISDM (1) Source-drain current (pulsed)
TO-220
DPAK
- 312 A
- 280 A
VSD (2) Forward on voltage
ISD = 78 A, VGS = 0
-
1.5 V
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 78 A, VDD = 25 V
TBD
di/dt = 100 A/µs,
- TBD
Tj = 150 °C
(see Figure 4)
TBD
ns
nC
A
1. Pulse width limited by safe operating area.
2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5%
Doc ID 15682 Rev 1
5/12
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6 Revision history
Table 8. Document revision history
Date
Revision
12-May-2009
1 First release
Revision history
Changes
Doc ID 15682 Rev 1
11/12
11 Page | ||
| Páginas | Total 12 Páginas | |
| PDF Descargar | [ Datasheet STD78N75F4.PDF ] | |
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