|
|
PDF CSD16321Q5 Data sheet ( Hoja de datos )
| Número de pieza | CSD16321Q5 | |
| Descripción | Power MOSFETs | |
| Fabricantes | Ciclon | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de CSD16321Q5 (archivo pdf) en la parte inferior de esta página. Total 9 Páginas | ||
|
No Preview Available !
N-Channel
CICLONwww.DataSheet4U.com NexFET™ Power MOSFETs
CSD16321Q5
Features
Optimized for 5V gate drive
Ultra Low Qg & Qgd
Low Thermal Resistance
Avalanche Rated
G
S
S
S
D
D
D
D
S1
S2
S3
G4
D
8D
7D
6D
5D
Pb Free Terminal Plating
RoHS Compliant
QFN 5mm x 6mm Plastic Package
Top View
Maximum Values (TA = 25oC unless otherwise stated)
Symbol
VDS
Drain to Source Voltage
Parameter
VGS Gate to Source Voltage
ID Continuous Drain Current, TC = 25°C
Continuous Drain Current1
IDM Pulsed Drain Current, TA = 25°C2
PD Power Dissipation1
TJ, TSTG
Operating Junction and Storage Temperature Range
EAS Avalanche Energy, single pulse ID =66A, L = 0.1mH, RG = 25Ω
1. RθJA = 390C/W on 1in2 Cu (2 oz.) on 0.060” thick FR4 PCB.
2. See Figure 10
Product Summary
VDS
Qg
Qgd
RDS(on)
Vth
25
14
2.5
VGS = 3.0V
VGS = 4.5V
VGS = 8.0V
1.1
2.8
2.1
1.9
V
nC
nC
m
m
m
V
Value
25
+10 / -6
100
31
200
3.1
-55 to 150
218
Units
V
V
A
A
A
W
°C
mJ
RDS(ON) vs. VGS
Gate Charge
6 10
ID = 25A
9 VDS = 12.5V
5 8 ID = 25A
4
TC = 125ºC
TC = 25ºC
7
6
35
4
2
3
1
0
0 1 2 3 4 5 6 7 8 9 10
VGS - Gate to Source Voltage (V)
2
1
0
0 5 10 15 20 25 30 35
Qg - Gate Charge (nC)
Ordering Information
Type
CSD16321Q5
Package
QFN 5X6 Plastic Package
Package Media
13 inch reel
© 2008 CICLON Semiconductor Device Corp., rev 2.0
All rights reserved. Confidential and proprietary information. Do not distribute.
Qty
2500
Ship
Tape and Reel
www.ciclonsemi.com
1 page  
N-Channel
CICLONwww.DataSheet4U.com NexFET™ Power MOSFETs
CSD16321Q5
Typical MOSFET Characteristics (TA = 25oC unless otherwise stated)
1.6
1.4
ID = 25A
VGS = 4.5V
1.2
1.0
100
10 TC = 125ºC
TC = 25ºC
1
0.8 0.1
0.6
0.01
0.4
0.2 0.001
0.0
-75
-25 25
75
TC - Case tem perature (°C)
125
0.0001
175 0
0.2 0.4 0.6
VSD - Source to Drain Voltage (V)
0.8
Figure 8: On Resistance vs. Temperature
Figure 9: Typical Diode Forward Voltage
1000
1000
1
100
1ms
10 10ms
1 Area limited
by RDS(ON)
0.1 Single pulse
RthJA=390C/W (max Cu)
0.01
0.01
0.1 1
VDS - Drain Voltage (V)
10
100ms
1s
DC
100
Figure 10: Maximum Safe Operating Area
120
100
10 TC = 25ºC
TC = 125ºC
1
1.0E-05
1.0E-04
1.0E-03
1.0E-02
tAV - Tim e in Avalanche (S)
1.0E-01
Figure 11: Single Pulse Unclamped Inductive
Switching
100
80
60
40
20
0
-50
-25
0 25 50 75 100 125 150 175
TC - Case Tem perature (oC)
Figure 12: Maximum Drain Current vs. Temperature
© 2008 CICLON Semiconductor Device Corp., rev 2.0
All rights reserved. Confidential and proprietary information. Do not distribute.
www.ciclonsemi.com
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet CSD16321Q5.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| CSD16321Q5 | N-Channel NexFET Power MOSFET CSD16321Q5 (Rev. B) |  Texas Instruments |
| CSD16321Q5 | Power MOSFETs | Ciclon |
| CSD16321Q5C | DualCool N-Channel NexFET Pwr MOSFET (Rev. B) | Texas Instruments |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |