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부품번호 | CSD16323Q3 기능 |
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기능 | Power MOSFET ( Transistor ) | ||
제조업체 | Ciclon | ||
로고 | |||
전체 10 페이지수
N-Channel
CICLON NexFETwww.DataSheet4U.com
™
Power
MOSFETs
CSD16323Q3
Features
Optimized for 5V gate drive
Ultra Low Qg & Qgd
Low Thermal Resistance
Avalanche Rated
Pb Free Terminal Plating
RoHS Compliant
G
S
S
S
D
D
D
D
S1
S2
S3
G4
D
8D
7D
6D
5D
Halogen Free
QFN 3.3mm x 3.3mm Plastic Package Top View
Maximum Values (TA = 25oC unless otherwise stated)
Symbol
VDS
Drain to Source Voltage
Parameter
VGS Gate to Source Voltage
ID Continuous Drain Current, TC = 25°C
Continuous Drain Current1
IDM Pulsed Drain Current, TA = 25°C2
PD Power Dissipation1
TJ, TSTG
Operating Junction and Storage Temperature Range
EAS Avalanche Energy, single pulse ID =50A, L = 0.1mH, RG = 25Ω
1. RθJA = 430C/W on 1in2 Cu (2 oz.) on 0.060” thick FR4 PCB.
2. See Figure 10
Product Summary
VDS
Qg
Qgd
RDS(on)
Vth
25
6.2
1.1
VGS = 3.0V
VGS = 4.5V
VGS = 8.0V
1.1
5.4
4.4
3.8
V
nC
nC
m
m
m
V
Value
25
+10 / -6
60
21
112
3.0
-55 to 150
125
Units
V
V
A
A
A
W
°C
mJ
RDS(ON) vs. VGS
Gate Charge
16 10
14
ID = 24A
9 VDS = 12.5V
8 ID = 24A
12
7
10 6
8
TC = 125ºC
5
6
TC = 25ºC
4
3
4
2
2
1
0
0 1 2 3 4 5 6 7 8 9 10
VGS - Gate to Source Voltage (V)
0
0 2 4 6 8 10 12 14
Qg - Gate Charge (nC)
Ordering Information
Type
CSD16323Q3
Package
QFN 3.3 X 3.3 Plastic Package
© 2009 CICLON Semiconductor Device Corp., rev 2.2
All rights reserved.
Package Media
13 inch reel
Qty
2500
Ship
Tape and Reel
www.ciclonsemi.com
N-Channel
CICLON NexFETwww.DataSheet4U.com
™
Power
MOSFETs
CSD16323Q3
Typical MOSFET Characteristics (TA = 25oC unless otherwise stated)
60 60
VDS = 5V
50 50
40 40
30
VGS = 8.0V
20
VGS = 4.5V
VGS = 3.5V
VGS = 2.5V
10 VGS = 2.0V
0
0.0 0.5 1.0 1.5 2.0
VDS - Drain to Source Voltage (V)
Figure 2: Saturation Characteristics
10
9 VDS = 12.5V
8 ID = 24A
7
6
5
4
3
2
1
0
0 2 4 6 8 10 12 14
Qg - Gate Charge (nC)
Figure 4: Gate Charge
1.4
1.2 ID = 250μA
1.0
0.8
0.6
0.4
0.2
0.0
-75
-25 25
75 125
TC - Case tem perature (°C)
175
Figure 6: Threshold Voltage vs. Temperature
30
20
10
0
1
2.5
2.0
1.5
1.0
TC = -55º C
TC = 25º C
TC = 125º C
1.25 1.5 1.75 2 2.25
VGS - Gate to Source Voltage (V)
Figure 3: Transfer Characteristics
2.5
VGS = 0V, f = 1MHz
CISS = CGD+CGS
COSS =CDS+CGD
CRSS = CGD
0.5
0.0
0
5 10 15 20
VDS - Drain to Source Voltage (V)
25
Figure 5: Capacitance
16
14 ID = 24A
12
10
8 TC = 125ºC
6 TC = 25ºC
4
2
0
0 1 2 3 4 5 6 7 8 9 10
VGS - Gate to Source Voltage (V)
Figure 7: On Resistance vs. Gate Voltage
© 2009 CICLON Semiconductor Device Corp., rev 2.2
All rights reserved.
www.ciclonsemi.com
4페이지 N-Channel
CICLON NexFETwww.DataSheet4U.com
™
Power
MOSFETs
CSD16323Q3
Q3 Tape and Reel Information
Note:
1. 10 SPROCKET HOLE PITCH CUMULATIVE TOLERANCE +/-0.2
2. CAMBER NOT TO EXCEED 1mm IN 100mm, NONCUMULATIVE OVER 250mm
3. MATERIAL:BLACK STATIC DISSIPATIVE POLYSTYRENE
4. ALL DIMENSIONS ARE IN mm (UNLESS OTHERWISE SPECIFIED)
5. THICKNESS: 0.30 +/-0.05mm
Package Marking Information
Location:
1st Line
85
CSD = Fixed Characters
NNNNN = Product Code
2nd Line (Date Code)
YY = Last 2 digits of the Year
WW = 2-digit Work Week
CSDNNNNN
YYWWC
LLLLL
C = Country of Origin
> Philippines = P
> Taiwan = T
> China = C
3rd Line
1
PIN 1
IDENTIFIER
4
LLLLL= Last 5 digits of the Wafer Lot #
© 2009 CICLON Semiconductor Device Corp., rev 2.2
All rights reserved.
58
41
www.ciclonsemi.com
C
Y
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부품번호 | 상세설명 및 기능 | 제조사 |
CSD16323Q3 | N-Channel NexFET Power MOSFET CSD16323Q3 (Rev. B) | Texas Instruments |
CSD16323Q3 | Power MOSFET ( Transistor ) | Ciclon |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |