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ADP3110 데이터시트 PDF




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부품번호 ADP3110 기능
기능 12V MOSFET Driver
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ADP3110 데이터시트, 핀배열, 회로
www.DataSheet4U.com
FEATURES
All-in-one synchronous buck driver
Bootstrapped high-side drive
One PWM signal generates both drives
Anticross-conduction protection circuitry
Output disable control turns off both MOSFETs to float
output per Intel® VRM 10 specification
APPLICATIONS
Multiphase desktop CPU supplies
Single-supply synchronous buck converters
Dual Bootstrapped, 12 V MOSFET
Driver with Output Disable
ADP3110
GENERAL DESCRIPTION
The ADP3110 is a dual, high voltage MOSFET driver optimized
for driving two N-channel MOSFETs, which are the two
switches in a nonisolated synchronous buck power converter.
Each of the drivers is capable of driving a 3000 pF load with a
25 ns propagation delay and a 30 ns transition time. One of the
drivers can be bootstrapped and is designed to handle the high
voltage slew rate associated with floating high-side gate drivers.
The ADP3110 includes overlapping drive protection to prevent
shoot-through current in the external MOSFETs.
The OD pin shuts off both the high-side and the low-side
MOSFETs to prevent rapid output capacitor discharge during
system shutdown.
The ADP3110 is specified over the commercial temperature
range of 0°C to 85°C and is available in an 8-lead SOIC_N
package.
SIMPLIFIED FUNCTIONAL BLOCK DIAGRAM
12V
ADP3110
IN 2
VCC
4
DELAY
OD 3
CMP
1V
DELAY
CMP
VCC
6
CONTROL
LOGIC
Figure 1.
D1
BST
1
CBST1
DRVH
8
CBST2
RG
Q1
SW
7
RBST
TO
INDUCTOR
DRVL
5
PGND
6
Q2
Rev. 0
Information furnished by Analog Devices is believed to be accurate and reliable.
However, no responsibility is assumed by Analog Devices for its use, nor for any
infringements of patents or other rights of third parties that may result from its use.
Specifications subject to change without notice. No license is granted by implication
or otherwise under any patent or patent rights of Analog Devices. Trademarks and
registered trademarks are the property of their respective owners.
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.
Tel: 781.329.4700
www.analog.com
Fax: 781.461.3113
©2005 Analog Devices, Inc. All rights reserved.




ADP3110 pdf, 반도체, 판매, 대치품
ADP3110www.DataSheet4U.com
ABSOLUTE MAXIMUM RATINGS
Table 2.
Parameter
Rating
VCC –0.3 V to +15 V
BST –0.3 V to VCC + 15 V
BST to SW
–0.3 V to +15 V
SW
DC –5 V to +15 V
<200 ns
–10 V to +25 V
DRVH
DC SW – 0.3 V to BST + 0.3 V
<200 ns
SW – 2 V to BST + 0.3 V
DRVL
DC –0.3 V to VCC + 0.3 V
<200 ns
–2 V to VCC + 0.3 V
IN, OD
–0.3 V to 6.5 V
θJA, SOIC_N
2-Layer Board
123°C/W
4-Layer Board
90°C/W
Operating Ambient Temperature
Range
0°C to 85°C
Junction Temperature Range
0°C to 150°C
Storage Temperature Range
–65°C to +150°C
Lead Temperature Range
Soldering (10 sec)
300°C
Vapor Phase (60 sec)
215°C
Infrared (15 sec)
260°C
Stresses above those listed under Absolute Maximum Ratings
may cause permanent damage to the device. This is a stress
rating only; functional operation of the device at these or any
other conditions above those indicated in the operational
section of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect
device reliability. Unless otherwise specified all other voltages
are referenced to PGND.
ESD CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily accumulate on
the human body and test equipment and can discharge without detection. Although this product features
proprietary ESD protection circuitry, permanent damage may occur on devices subjected to high energy
electrostatic discharges. Therefore, proper ESD precautions are recommended to avoid performance
degradation or loss of functionality.
Rev. 0 | Page 4 of 12

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ADP3110 전자부품, 판매, 대치품
www.DataSheet4U.com
THEORY OF OPERATION
The ADP3110 is a dual MOSFET driver optimized for driving
two N-channel MOSFETs in a synchronous buck converter
topology. A single PWM input signal is all that is required to
properly drive the high-side and the low-side MOSFETs. Each
driver is capable of driving a 3 nF load at speeds up to 500 kHz.
A more detailed description of the ADP3110 and its features
follows. Refer to Figure 1.
LOW-SIDE DRIVER
The low-side driver is designed to drive a ground-referenced
N-channel MOSFET. The bias to the low-side driver is
internally connected to the VCC supply and PGND.
When the ADP3110 is enabled, the driver’s output is
180 degrees out of phase with the PWM input. When the
ADP3110 is disabled, the low-side gate is held low.
HIGH-SIDE DRIVER
The high-side driver is designed to drive a floating N-channel
MOSFET. The bias voltage for the high-side driver is developed
by an external bootstrap supply circuit, which is connected
between the BST and SW pins.
The bootstrap circuit comprises a diode, D1, and bootstrap
capacitor, CBST1. CBST2 and RBST are included to reduce the high-
side gate drive voltage and limit the switch node slew rate
(referred to as a Boot-Snap™ circuit, see the Application
Information section for more details). When the ADP3110 is
starting up the SW pin is at ground; therefore the bootstrap
capacitor charges up to VCC through D1. When the PWM
input goes high, the high-side driver begins to turn on the high-
side MOSFET, Q1, by pulling charge out of CBST1 and CBST2. As
Q1 turns on, the SW pin rises up to VIN, forcing the BST pin to
VIN + VC(BST), which is enough gate-to-source voltage to hold Q1
ADP3110
on. To complete the cycle, Q1 is switched off by pulling the gate
down to the voltage at the SW pin. When the low-side
MOSFET, Q2, turns on, the SW pin is pulled to ground. This
allows the bootstrap capacitor to charge up to VCC again.
The high-side driver’s output is in phase with the PWM input.
When the driver is disabled, the high-side gate is held low.
OVERLAP PROTECTION CIRCUIT
The overlap protection circuit prevents both of the main power
switches, Q1 and Q2, from being on at the same time. This
prevents shoot-through currents from flowing through both
power switches, and the associated losses that can occur during
their on/off transitions. The overlap protection circuit
accomplishes this by adaptively controlling the delay from the
Q1 turn off to the Q2 turn on, and by internally setting the
delay from the Q2 turn off to the Q1 turn on.
To prevent the overlap of the gate drives during the Q1 turn off
and the Q2 turn on, the overlap circuit monitors the voltage at
the SW pin. When the PWM input signal goes low, Q1 begins
to turn off (after propagation delay). Before Q2 can turn on, the
overlap protection circuit makes sure that SW has first gone
high and then waits for the voltage at the SW pin to fall from
VIN to 1 V. Once the voltage on the SW pin has fallen to 1 V, Q2
begins turn on. If the SW pin had not gone high first, then the
Q2 turn on is delayed by a fixed 150 ns. By waiting for the
voltage on the SW pin to reach 1 V or for the fixed delay time,
the overlap protection circuit ensures that Q1 is off before Q2
turns on, regardless of variations in temperature, supply voltage,
input pulse width, gate charge, and drive current. If SW does
not go below 1 V after 190 ns, DRVL turns on. This can occur if
the current flowing in the output inductor is negative and is
flowing through the high-side MOSFET body diode.
Rev. 0 | Page 7 of 12

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