Datasheet.kr   

EM566169BC PDF 데이터시트 : 부품 기능 및 핀배열

부품번호 EM566169BC
기능 1M x 16 Pseudo SRAM
제조업체 Etron Technology
로고 Etron Technology 로고 



전체 15 페이지

		

No Preview Available !

EM566169BC 데이터시트, 핀배열, 회로
EtronTechwww.DataSheet4U.com
EM566169BC
1M x 16 Pseudo SRAM
Rev 0.6 Apr. 2004
Features
Pad Assignment
Organized as 1M words by 16 bits
Fast Cycle Time : 60/65/70/85ns
Fast Page Cycle Time : 18/20/25/30ns
Page Read Operation by 8 words
Standby Current(ISB1): 100uA
Deep power-down Current : 10uA (Memory cell data
invalid)
Byte data control: LB# (DQ0 - 7), UB# (DQ8 - 15)
Compatible with low power SRAM
Single Power Supply Voltage : 3.0V±0.3V
Package Type : 48-ball FBGA, 6x8mm
12
A LB# OE#
B DQ8 UB#
C DQ9 DQ10
D VSS DQ11
3
A0
A3
A5
A17
456
A1 A2 CE2
A4 CE1# DQ0
A6 DQ1 DQ2
A7 DQ3 VCC
Ordering Information
Part Number
Speed(ns)
EM566169BC-60/65/70/85
60/65/70/85
Pin Description
Symbol
A0 – A19
DQ0 – DQ15
CE1#
CE2
OE#
W E#
LB#
UB#
VCC/VCCQ
VSS/VSSQ
Function
Address Inputs
Data Inputs/Outputs
Chip Enable
Standby Mode
Output Enable
Write Control
Lower Byte Control
Upper Byte Control
Power Supply
Ground
E VCC DQ12 NC A16 DQ4 VSS
F DQ14 DQ13 A14 A15 DQ5 DQ6
G DQ15 A19 A12 A13 WE# DQ7
H
A18 A8
A9 A10 A11 NC
Overview
The EM566169 is a 16M-bit Pseudo SRAM organized as 1M words by 16 bits. It is designed with advanced
CMOS technology specified RAM featuring low power static RAM compatible function and pin configuration.
This device operates from a single power supply. Advanced circuit technology provides both high speed and
low power. It is automatically placed in low-power mode when CE1# or both UB# and LB# are asserted high or
CE2 is asserted low. There are three control inputs. CE1# and CE2 are used to select the device, and output
enable (OE#) provides fast memory access. Data byte control pins (LB#,UB#) provide lower and upper byte
access. This device is well suited to various microprocessor system applications where high speed, low power
and battery backup are required. And, with a guaranteed wide operating range, the EM566169 can be used in
environments exhibiting extreme temperature conditions.
Etron Technology, Inc.
No. 6, Technology Rd. V, Science-Based Industrial Park, Hsinchu, Taiwan 30077, R.O.C.
TEL: (886)-3-5782345 FAX: (886)-3-5778671
Etron Technology, Inc., reserves the right to make changes to its products and specifications without notice.




EM566169BC pdf, 반도체, 판매, 대치품
EtronTechwww.DataSheet4U.com
EM566169BC
Operating Mode
CE1# CE2 OE# WE# LB# UB# DQ0~DQ7 DQ8~DQ15
Mode
X L X X X X High-Z
High-Z Deselect
HHXXXX
L H XXHH
High-Z
High-Z
High-Z Deselect
High-Z Deselect
LHHH L X
LHHHX L
LHLHLH
High-Z
High-Z
D-out
High-Z
High-Z
High-Z
Output Disabled
Output Disabled
Lower Byte Read
L H L H H L High-Z
LHLHL L
D-out
D-out
D-out
Upper Byte Read
Word Read
LHXL LH
D-in
High-Z Lower Byte Write
L H X L H L High-Z
LHXL L L
D-in
Note: X=don’t care. H=logic high. L=logic low.
D-in Upper Byte Write
D-in Word Write
Power
Deep Power Down
Standby
Standby
Active
Active
Active
Active
Active
Active
Active
Active
Absolute Maximum Ratings1)
Supply voltage, VCC
Input voltages, VIN
Input and output voltages, VIN, VOUT
Output short circuit current ISH
Operating temperature, TA
Storage temperature, TSTRG
Soldering Temperature (10s), TSOLDER
Power dissipation, PD
-0.2 to +3.6V
-0.2 to VCC + 0.3V
-2.0 to +3.6V*
100 mA
-25 to +85°C
-65 to +125°C
240°C
1W
Note: Absolute maximum DC requirements contains stress ratings only. Functional operation at the absolute
maximum limits is not implied or guaranteed. Extended exposure to maximum ratings may affect device
reliability.
Recommended DC Operating Conditions
Symbol
VCC
VSS
VIH
VIL
Parameter
Power Supply Voltage
Ground
Input High Voltage
Input Low Voltage
Min.
2.7
0
2.2
-0.22)
Notes:
1. Overshoot: VCC + 2.0V in case of pulse width 20ns
2. Undershoot: -2.0V in case of pulse width 20ns
3. Overshoot and undershoot are sampled, not 100% tested.
Typ.
3.0
Max.
3.3
0
VCC+0.21)
+0.6
Unit
V
V
V
V
4
Rev 0.6
Apr. 2004

4페이지










EM566169BC 전자부품, 판매, 대치품
EtronTechwww.DataSheet4U.com
EM566169BC
AC Test Condition
Output load : 30pF + one TTL gate
Input pulse level : 0.4V, 2.4
Timing measurements : 0.5 x VCC
tR, tF : 5ns
AC Test Loads
DOUT
Z0 = 50
Note:
1. Including scope and jig capacitance
RL = 50
CL1 = 30 pF
VL = 1.5 V
State Diagram
Deep Power Down Exit Sequence
CE2=VIH
Power
on
Initial State
(Wait 200µs)
Power Up Sequence
CE1# = VIH or VIL,
CE2=VIH
Deep Power
Down Mode
Active
CE2=VIL
CE1# =VIL,
CE2=VIH,
CE2=VIL
CE2=VIH,
CE1# =VIH
or UB#, LB#
=VIH
Standby
Standby Mode Characteristics
Power Mode
Standby
Deep Power Down
Memory Cell Data
Valid
Invalid
Standby Current (µA)
100
10
Wait Time
0 ns
200 µs
7
Rev 0.6
Apr. 2004

7페이지



구       성총 15 페이지
다운로드[ EM566169BC.PDF 데이터시트 ]
구매 문의
일반 IC 문의 : 샘플 및 소량 구매
-----------------------------------------------------------------------

전력 반도체 판매 ( IGBT, TR 모듈, SCR, 다이오드 모듈 )

상호 : 아이지 인터내셔날

사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ]



링크공유

링크 :

관련 데이터시트

부품번호상세설명 및 기능제조사
EM566169BC

1M x 16 Pseudo SRAM

Etron Technology
Etron Technology
EM566169BC

1M x 16 Pseudo SRAM

Etron Technology
Etron Technology

DataSheet.kr    |   2020   |  연락처   |  링크모음   |   검색  |   사이트맵