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PESD3V3L1UA 데이터시트 PDF




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부품번호 PESD3V3L1UA 기능
기능 Low Capacitance Unidirectional ESD Protection Diodes
제조업체 NXP Semiconductors
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PESD3V3L1UA 데이터시트, 핀배열, 회로
www.DataSheet4U.com
PESD3V3L1UA; PESD3V3L1UB;
PESD3V3L1UL
Low capacitance unidirectional ESD protection diodes
Rev. 01 — 17 June 2009
Product data sheet
1. Product profile
1.1 General description
Low capacitance unidirectional ElectroStatic Discharge (ESD) protection diodes in small
Surface-Mounted Device (SMD) plastic packages designed to protect one signal line from
the damage caused by ESD and other transients.
Table 1. Product overview
Type number
Package
NXP
PESD3V3L1UA
SOD323
PESD3V3L1UB
SOD523
PESD3V3L1UL
SOD882
JEITA
SC-76
SC-79
-
Package configuration
very small
ultra small and flat lead
leadless ultra small
1.2 Features
I Unidirectional ESD protection of
one line
I Low diode capacitance: Cd = 34 pF
I Low clamping voltage: VCL = 11 V
I Very low leakage current: IRM = 100 nA
I ESD protection up to 30 kV
I IEC 61000-4-2; level 4 (ESD)
I AEC-Q101 qualified
1.3 Applications
I Computers and peripherals
I Audio and video equipment
I Cellular handsets and accessories
I Communication systems
I Subscriber Identity Module (SIM) card
protection
I Portable electronics
I FireWire
I High-speed data lines
1.4 Quick reference data
Table 2. Quick reference data
Tamb = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
VRWM
reverse standoff voltage
Cd diode capacitance
f = 1 MHz; VR = 0 V
Min Typ Max Unit
- - 3.3 V
- 34 40 pF




PESD3V3L1UA pdf, 반도체, 판매, 대치품
www.DNatXaSPheSete4Um.coicmonductors
PESD3V3L1UA/UB/UL
Low capacitance unidirectional ESD protection diodes
120
IPP
(%)
80
40
100 % IPP; 8 µs
001aaa630
et
50 % IPP; 20 µs
0
0 10 20 30 40
t (µs)
Fig 1. 8/20 µs pulse waveform according to
IEC 61000-4-5
IPP
100 %
90 %
001aaa631
10 %
tr = 0.7 ns to 1 ns
30 ns
60 ns
Fig 2. ESD pulse waveform according to
IEC 61000-4-2
t
6. Characteristics
Table 9. Characteristics
Tamb = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
Min Typ Max
VRWM
IRM
VBR
Cd
VCL
rdif
VF
reverse standoff voltage
reverse leakage current
breakdown voltage
diode capacitance
clamping voltage
differential resistance
forward voltage
VRWM = 3.3 V
IR = 5 mA
f = 1 MHz;
VR = 0 V
IPP = 1 A
IPP = 4.5 A
IR = 5 mA
IF = 200 mA
-
-
5.3
-
[1][2]
-
-
-
-
- 3.3
100 300
5.6 6.0
34 40
-8
- 11
- 30
- 1.2
[1] Non-repetitive current pulse 8/20 µs exponential decay waveform according to IEC 61000-4-5.
[2] Measured from pin 1 to pin 2.
Unit
V
nA
V
pF
V
V
V
PESD3V3L1UA_UB_UL_1
Product data sheet
Rev. 01 — 17 June 2009
© NXP B.V. 2009. All rights reserved.
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PESD3V3L1UA 전자부품, 판매, 대치품
www.DNatXaSPheSete4Um.coicmonductors
PESD3V3L1UA/UB/UL
Low capacitance unidirectional ESD protection diodes
7. Application information
The PESD3V3L1Ux series is designed for the protection of one unidirectional data or
signal line from the damage caused by ESD and surge pulses. The devices may be used
on lines where the signal polarities are either positive or negative with respect to ground.
The PESD3V3L1Ux series provides a surge capability up to 45 W per line for an 8/20 µs
waveform.
line to be protected
(positive signal polarity)
line to be protected
(negative signal polarity)
PESD3V3L1Ux
PESD3V3L1Ux
GND
GND
unidirectional protection of one line
006aab614
Fig 6. Application diagram
Circuit board layout and protection device placement
Circuit board layout is critical for the suppression of ESD and Electrical Fast
Transient (EFT). The following guidelines are recommended:
1. Place the device as close to the input terminal or connector as possible.
2. The path length between the device and the protected line should be minimized.
3. Keep parallel signal paths to a minimum.
4. Avoid running protected conductors in parallel with unprotected conductors.
5. Minimize all Printed-Circuit Board (PCB) conductive loops including power and
ground loops.
6. Minimize the length of the transient return path to ground.
7. Avoid using shared transient return paths to a common ground point.
8. Ground planes should be used whenever possible. For multilayer PCBs, use ground
vias.
8. Test information
8.1 Quality information
This product has been qualified in accordance with the Automotive Electronics Council
(AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is
suitable for use in automotive applications.
PESD3V3L1UA_UB_UL_1
Product data sheet
Rev. 01 — 17 June 2009
© NXP B.V. 2009. All rights reserved.
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