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PDF BUK9006-55A Data sheet ( Hoja de datos )
| Número de pieza | BUK9006-55A | |
| Descripción | N-channel Enhancement mode field-effect power Transistor | |
| Fabricantes | NXP Semiconductors | |
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BUK9006-55A
TrenchMOS™ logic level FET
Rev. 01 — 1 August 2003
Preliminary data
1. Product profile
1.1 Description
N-channel enhancement mode field-effect power transistor available as a bare die
using Philips General Purpose Automotive (GPA) TrenchMOS™ technology.
Product availability:
BUK9006-55A distributed as individual die on reel.
1.2 Features
s 25 A testing of individual die
s Life-tested to Q101 at 175 °C
s Inductive energy testing of individual s Automatic visual inspection.
die
1.3 Applications
s Automotive systems
s Motors, lamps and solenoids
s 12 V and 24 V loads
s General purpose power switching.
1.4 Quick reference data
s EDS(AL)S ≤ 1.1 J
s V(BR)DSS ≤ 55 V
s Die size = 4.30 × 4.30 mm (typ)
s RDSon(die) = 5 mΩ (typ)
s VGS(th) = 1.5 V (typ)
s Die thickness = 240 µm (typ).
2. Pinning information
Table 1: Pinning - Bare die simplified outline and symbol
Pin Description
Simplified outline
1 gate
2 source
- drain; connected to
underside of die
12
03nn81
Symbol
d
g
MBB076
s
1 page  
Philips Semiconductors
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BUK9006-55A
TrenchMOS™ logic level FET
2.5
VGS(th)
(V)
2
1.5
1
max
typ
min
03aa33
10-1
ID
(A)
10-2
10-3
10-4
03aa36
min typ
max
0.5 10-5
0
-60 0 60 120 180
Tj (°C)
10-6
0123
VGS (V)
ID = 1 mA; VDS = VGS
Fig 5. Gate-source threshold voltage as a function of
junction temperature.
Tj = 25 °C; VDS = VGS
Fig 6. Sub-threshold drain current as a function of
gate-source voltage.
120
gfs
(S)
80
03nn84
12000
C
(pF)
8000
Ciss
Coss
Crss
03nn89
40 4000
0
0 20 40 60 80
ID (A)
Tj = 25 °C; VDS = 25 V
Fig 7. Forward transconductance as a function of
drain current; typical values.
0
10-2
10-1
1
10 102
VDS (V)
VGS = 0 V; f = 1 MHz
Fig 8. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values.
9397 750 11571
Preliminary data
Rev. 01 — 1 August 2003
© Koninklijke Philips Electronics N.V. 2003. All rights reserved.
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