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PDF BUK9MGP-55PTS Data sheet ( Hoja de datos )
| Número de pieza | BUK9MGP-55PTS | |
| Descripción | Dual TrenchPLUS Logic Level FET | |
| Fabricantes | NXP Semiconductors | |
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BUK9MGP-55PTS
www.DataSheet4U.com
Dual TrenchPLUS logic level FET
Rev. 01 — 14 May 2009
Product data sheet
1. Product profile
1.1 General description
Dual N-channel enhancement mode field-effect power transistor in SO20. Device is
manufactured using NXP High-Performance (HPA) TrenchPLUS technology, featuring
very low on-state resistance, integrated current sensing transistors and over temperature
protection diodes.
1.2 Features and benefits
Integrated current sensors
Integrated temperature sensors
1.3 Applications
Lamp switching
Motor drive systems
Power distribution
Solenoid drivers
1.4 Quick reference data
Table 1. Quick reference
Symbol Parameter
Conditions
Static characteristics, FET1
RDSon
drain-source
on-state resistance
VGS = 5 V; ID = 10 A;
Tj = 25 °C; see Figure 23;
see Figure 25
ID/Isense ratio of drain current Tj = 25 °C; VGS = 5 V; see
to sense current
Figure 27
V(BR)DSS drain-source
breakdown voltage
Static characteristics, FET2
VGS = 0 V; ID = 250 µA;
Tj = 25 °C
RDSon
drain-source
on-state resistance
VGS = 5 V; ID = 5 A;
Tj = 25 °C; see Figure 24;
see Figure 26
ID/Isense ratio of drain current Tj = 25 °C; VGS = 5 V; see
to sense current
Figure 28
V(BR)DSS drain-source
VGS = 0 V; ID = 250 µA;
breakdown voltage Tj = 25 °C
Min Typ Max Unit
- 8.6 10 mΩ
8100 9000 9900 A/A
55 - - V
- 21.3 25 mΩ
5910 6570 7227 A/A
55 - - V
1 page  
NXP Semiconductors
www.DataSheet4U.com
BUK9MGP-55PTS
Dual TrenchPLUS logic level FET
20
ID
(A)
16
12
8
4
0
0
003aac532
50 100 150 200
Tsp (°C)
Fig 3. Continuous drain current as a function of
solder point temperature, FET1.
102
IAL
(A)
003aac527
10
(1)
1
10-1
10-3
10-2
10-1
(2)
(3)
1 10
tAL (ms)
12
ID
(A)
8
003aac533
4
0
0 50 100 150 200
Tsp (°C)
Fig 4. Continuous drain current as a function of
solder point temperature, FET2.
102
IAL
(A)
003aac528
10
(1)
1
10-1
10-3
10-2
10-1
(2)
(3)
1 10
tAL (ms)
Fig 5. Single-pulse and repetitive avalanche rating;
avalanche current as a function of avalanche
time, FET1
Fig 6. Single-pulse and repetitive avalanche rating;
avalanche current as a function of avalanche
time, FET2
BUK9MGP-55PTS_1
Product data sheet
Rev. 01 — 14 May 2009
© NXP B.V. 2009. All rights reserved.
5 of 20
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NXP Semiconductors
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BUK9MGP-55PTS
Dual TrenchPLUS logic level FET
Table 6. Characteristics …continued
Symbol Parameter
Conditions
Min Typ Max Unit
LD internal drain
inductance
From pin to centre of die
- 0.85 - nH
LS internal source From source lead to source bonding pad
inductance
- 2 - nH
Source-drain diode, FET1
VSD source-drain voltage IS = 10 A; VGS = 0 V; Tj = 25 °C; see
Figure 34
- 0.85 1.2 V
trr reverse recovery time
Qr recovered charge
Source-drain diode, FET2
IS = 5 A; dIS/dt = -100 A/µs; VGS = -10 V;
VDS = 30 V;
[1]
-
-
66.4 -
126 -
ns
nC
VSD source-drain voltage IS = 5 A; VGS = 0 V; Tj = 25 °C; see Figure
35
- 0.85 1.2 V
trr reverse recovery time IS = 5 A; dIS/dt = -100 A/µs; VGS = -10 V;
Qr
recovered charge
VDS = 30 V
- 44 - ns
- 69 - nC
[1] xsa
200
ID
(A)
150
10
100
50
0
02
003aac358
5
4.5
4
3.5
3
VGS (V) =2.5 V
4 6 8 10
VDS (V)
100
ID
(A)
80
10 5 4.5
4
003aac369
60 3.5
40 3
20 VGS (V) =2.5 V
0
0 2 4 6 8 10
VDS (V)
Fig 15. Output characteristics: drain current as a
function of drain-source voltage; typical values,
FET1
Fig 16. Output characteristics: drain current as a
function of drain-source voltage; typical values,
FET2
BUK9MGP-55PTS_1
Product data sheet
Rev. 01 — 14 May 2009
© NXP B.V. 2009. All rights reserved.
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