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부품번호 | STP10NM60N 기능 |
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기능 | Power MOSFETs | ||
제조업체 | ST Microelectronics | ||
로고 | |||
전체 28 페이지수
STD10NM60N, STF10NM60N,
STP10NM60N, STU10NM60N
N-channel 600 V, 0.53 Ω typ., 10 A MDmesh™ II Power MOSFET
in DPAK, TO-220FP, TO-220 and IPAK packages
Datasheet - production data
7$%
DPAK
7$%
TO-220
TO-220FP
7$%
IPAK
Features
Order code
VDS @TJ
max.
STD10NM60N
STF10NM60N
STP10NM60N
STU10NM60N
650 V
RDS(on)
max.
0.55 Ω
ID PTOT
10 A
70 W
25 W
70 W
• 100% avalanche tested
• Low input capacitance and gate charge
• Low gate input resistance
Figure 1. Internal schematic diagram
Applications
'7$%
• Switching applications
Description
*
6
Order code
These devices are N-channel Power MOSFETs
developed using the second generation of
MDmesh™ technology. This revolutionary Power
MOSFET associates a vertical structure to the
company’s strip layout to yield one of the world’s
lowest on-resistance and gate charge. It is
therefore suitable for the most demanding high
efficiency converters.
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Table 1. Device summary
Marking
Package
Packing
STD10NM60N
STF10NM60N
STP10NM60N
STU10NM60N
10NM60N
10NM60N
10NM60N
10NM60N
DPAK
TO-220FP
TO-220
IPAK
Tape and reel
Tube
Tube
Tube
December 2015
This is information on a product in full production.
DocID028726 Rev 1
1/28
www.st.com
Electrical characteristics
STD10NM60N, STF10NM60N, STP10NM60N, STU10NM60N
2 Electrical characteristics
(Tcase = 25 °C unless otherwise specified)
Symbol
Parameter
Table 5. On/off-states
Test conditions
V(BR)DSS
IDSS
IGSS
VGS(th)
RDS(on)
Drain-source
breakdown voltage
ID = 1 mA, VGS = 0
ID = 1 mA, VGS = 0,
TC = 150 °C
Zero-gate voltage
VDS = 600 V
drain current (VGS = 0) VDS = 600 V, TC = 125 °C
Gate-body leakage
current (VDS = 0)
VGS = ± 25 V
Gate threshold voltage VDS = VGS, ID = 250 µA
Static drain-source on-
resistance
VGS = 10 V, ID = 4 A
Min.
600
Typ.
650
Max. Unit
V
1
µA
100
± 100 nA
2 3 4V
0.53 0.55 Ω
Table 6. Dynamic
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
Ciss
Coss
Crss
Input capacitance
Output capacitance
Reverse transfer
capacitance
VDS = 50 V, f = 1 MHz,
VGS = 0
- 540 - pF
- 44 - pF
- 1.2 - pF
Equivalent
Coss
(1)
eq
capacitance time
related
VDS = 0 to 480 V, VGS = 0
- 110 - pF
Rg Gate input resistance f=1 MHz open drain
- 6 -Ω
Qg Total gate charge
VDD = 480 V, ID = 8 A,
Qgs Gate-source charge VGS = 10 V
Qgd Gate-drain charge
(see Figure 17)
- 19 - nC
- 3 - nC
- 10 - nC
1. Coss eq. time related is defined as a constant equivalent capacitance giving the same charging time as Coss
when VDS increases from 0 to 80% VDSS.
4/28 DocID028726 Rev 1
4페이지 STD10NM60N, STF10NM60N, STP10NM60N, STU10NM60N
Electrical characteristics
Figure 8. Output characteristics
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Figure 9. Transfer characteristics
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Figure 10. Normalized VDS vs. temperature
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Figure 11. Static drain-source on-resistance
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Figure 12. Gate charge vs. gate-source voltage
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Figure 13. Capacitance variations
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DocID028726 Rev 1
7/28
28
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부품번호 | 상세설명 및 기능 | 제조사 |
STP10NM60N | Power MOSFETs | ST Microelectronics |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |