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PDF PV1005UDF16B Data sheet ( Hoja de datos )
| Número de pieza | PV1005UDF16B | |
| Descripción | TVS Diode | |
| Fabricantes | KEC semiconductor | |
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SEMICONDUCTOR
TECHNICAL DATA
PV1005UDF16B
ESD/EMI Filter
APPLICATION
I/O ESD protection for mobile handsets, notebook, PDAs, etc.
EMI filtering for data ports in cell phones, PDAs, notebook computers
EMI filtering for LCD, camera and chip-to-chip data lines
FEATURES
EMI/RFI filtering
ESD Protection to IEC 61000-4-2 Level 4
Low insertion loss
Good attenuation of high frequency signals
Low clamping voltage
Low operating and leakage current
Eight elements in one package
DESCRIPTION
PV1005UDF16B is an EMI filter array with electrostatic discharge (ESD) protection,
which integrates eight pi filters (C-R-C). These parts include ESD protection diodes on
every pin, providing a very high level of protection for sensitive electronic components
that may be subjected to electrostatic discharge.
The PV1005UDF16B provides the recommended line termination while implementing a
low pass filter to limit EMI levels and providing ESD protection which exceeds IEC
61000-4-2 level 4 standard. The UDFN package is a very effective PCB space
occupation and a very thin package (0.4mm Pitch, 0.5mm height)
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
DC Power Per Resistor
Power Dissipation
Junction Temperature
Storage Temperature
* Total Package Power Dissipation
SYMBOL
PR
*PD
Tj
Tstg
RATING
100
800
150
-55 150
UNIT
mW
EQUIVALENT CIRCUIT
FILTERn*
100Ω
FILTERn*
5pF 5pF
Pin 1
A
TOP VIEW
C
E
18
GND PAD
16 D 9
BOTTOM VIEW
DIM MILLIMETERS
SIDE VIEW
A
KL B
C
D
E
3.30 +_ 0.05
1.35 +_ 0.05
2.90 +_ 0.10
0.20 +_ 0.05
0.40
1,16 : Filter channel 1
2,15 : Filter channel 2
F 0.40 +_ 0.10
G 0.25 +_ 0.10
3,14 : Filter channel 3
H 0.20 Min
4,13 : Filter channel 4
J 0.50 +_ 0.05
5,12 : Filter channel 5
K 0.20
6,11 : Filter channel 6
L 0.02+0.03/-0.02
7,10 : Filter channel 7
8,9 : Filter channel 8
UDFN-16B
MARKING
Type Name
V1
Lot No.
RECOMMENEDED FOOTPRINT
(dimensions in mm)
0.40
0.30
0.25
2.20
GND
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
Reverse Stand-Off Voltage
Reverse Breakdown Voltage
Reverse Leakage Current
Cutoff Frequency
Channel Resistance
Line Capacitance
SYMBOL
VRWM
VBR
IR
fc-3dB
RLINE
CLINE
TEST CONDITION
-
It=1mA
VRWM=3.3V
VLine=0V, ZSOURCE=50 , ZLOAD=50
Between Input and Output
VLine=0V DC, 1MHz, Between I/O Pins and GND
VLine=2.5V, 1MHz, Between I/O Pins and GND
MIN.
-
6
-
-
80
12
8
TYP.
-
-
-
300
100
15
10
MAX.
5
-
1.0
-
120
18
12
UNIT
V
V
A
MHz
pF
2009. 6. 3
Revision No : 0
1/2
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| PDF Descargar | [ Datasheet PV1005UDF16B.PDF ] | |
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