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AWT6223R 데이터시트 PDF




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부품번호 AWT6223R 기능
기능 WCDMA/GSM/GPRS/Polar EDGE Power Amplifier Module
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AWT6223R 데이터시트, 핀배열, 회로
www.DataSheet4U.com
AWT6223R
WCDMA/GSM/GPRS/Polar EDGE
Power Amplifier Module
with Integrated Power Control
features
Data Sheet - Rev 2.0
InGaP HBT Technology
Optimized for a 50 System
InGaP HBT MMIC technology to provide reliability,
Internal Reference Voltage
temperature stability, and ruggedness. This penta-
Integrated GSM/EDGE Power Control with Tem- band module consists of three amplifier chains; one
perature Compensation
to support GSM/GPRS/EGPRS in cellular bands, one
Low Profile Surface Mount Package:
to support GSM/GPRS/EGPRS in DCS/PCS bands,
6 mm x 8 mm x 1 mm
and one to support WCDMA in the IMT band. In ad-
RoHS Compliant Package, 250 oC MSL-3
dition, the AWT6223R module includes an internal
WCDMA MODE
HSDPA Compliant
High Efficiency:
41% @ POUT = +28.5 dBm
21% @ POUT = +16 dBm
Low Quiescent Current: 12 mA
reference voltage and integrated power control with
temperature compensation for use in GMSK and
8-PSK modes of operation. These features facilitate
fast and easy production calibration, minimize per-
formance variation over temperature, and reduce the
number of external components required.
Low Leakage Current in Shutdown Mode: <1 A
Internal Voltage Regulator Eliminates the Need for
External Reference Voltage
VEN = +2.4 V (+2.2 V min over Temp)
The WCDMA PA incorporates ANADIGICS’ HELP2TM
technology. Through selectable bias modes, the
AWT6223R achieves optimal efficiency across
different output power levels, specifically at low
GMSK MODE
and mid-range power levels where the PA typically
+35 dBm GSM850/900 Output Power
operates, thereby dramatically increasing handset
+33 dBm DCS/PCS Output Power
talk-time and standby-time. Its built-in voltage regulator
55 % GSM850/900 PAE
eliminates the need for an external reference voltage
50 % DCS/PCS PAE
and switch components, reducing PCB area and BOM
Power Control Range > 50 dB
costs. All of the RF ports for this device are internally
EGPRS Capable (class 12)
matched to 50 . The RF inputs GSM_IN and DCS/
EDGE MODE
PCS_IN both have shunt resistors to ground to main-
+29 dBm GSM850/900 Output Power
tain a good input VSWR as the VRAMP power control
+28.5 dBm DCS/PCS Output Power
voltage is varied. Internal DC blocks are provided at
27 % GSM850/900 PAE
the RF outputs.
30 % DCS/PCS PAE
-63 dBc/30 kHz Typical ACPR (400 kHz)
-77 dBc/30 kHz Typical ACPR (600 kHz)
CEXT2
APPLICATIONS
3G Handsets, Smartphones, Data Devices Incor-
porating:
WCDMA_IN
VMODE
VEN
1
2
3
22
Voltage Regulator
and Bias Control
21 VCC_WCDMA
20 WCDMA_OUT
19 GND
WCDMA (IMT)
DCS/PCS_IN 4
18 DCS/PCS_OUT
GSM850/GSM900/DCS/PCS Bands
GMSK and 8-PSK (Open Loop Polar)
Modulations
BS
TX_EN
VBATT
5
6
7
CMOS Bias/Power
Controller
17 GND
16 GND
15 CEXT3
PRODUCT DESCRIPTION
The AWT6223R WEDGE module supports dual, tri,
or quad band operation using GMSK/GPRS and
8-PSK (open loop polar) modulations, and WCDMA
operation in the IMT band. The AWT6223R mod-
ule is manufactured using ANADIGICS’ advanced
CEXT1
8
14 GND
VRAMP
9
13 GND
GSM850/900_IN 10
11
12 GSM850/900_OUT
VCC_GSM
Figure 1: Block Diagram
11/2008




AWT6223R pdf, 반도체, 판매, 대치품
AWT6223R
Table 3: GSM/EDGE Operating Conditions
wwPwa.DrataaSMheeett4eUr.com
Case temperature (TC)
MIN tYP MaX uNIts
-20 -
85 °C
COMMeNts
Supply voltage (VBATT)
3.0 3.5 4.8
V
Total Power Supply Leakage
Current
-
VBATT = VCC_WCDMA = 4.8 V, VEN = 0 V,
1 10 A VMODE = 0 V, BS = 0 V, VRAMP = 0 V,
TX_EN = LOW, No RF applied
Control Voltage Range
0.2 - 1.6 V
Turn On Time (TON)
-
-
1
s
VRAMP = 0.2 V, TX_EN = LOW Y HIGH
PIN = 5 dBm
Turn Off Time (TOFF)
-
-
1
s
VRAMP = 0.2 V, TX_EN = LOW Y HIGH
PIN = 5 dBm
Rise Time (TRISE)
- - 1 s POUT = -10 dBm Y PMAX (within 0.2 dB)
Fall Time (TFALL)
- - 1 s POUT = PMAX Y -10 dBm (within 0.2 dB)
VRAMP Input Capacitance
- 3 - pF
VRAMP Input Current
Duty Cycle
- - 10     A
- - 50 %
The device may be operated safely over these conditions; however, parametric performance is guaranteed only
over the conditions defined in the electrical specifications.
Notes:
1. Do not apply a DC voltage to the GSM_IN or DCS/PCS_IN RF inputs.
ParaMeter
Logic High Voltage
Logic Low Voltage
Logic High Current
Logic Low Current
Table 4: GSM/EDGE Digital Inputs
sYMBOL
VIH
VIL
|IIH|
|IIL|
MIN tYP MaX uNIts
1.2 - 3.0
V
-
- 0.5
V
- - 30 A
- - 30 A
Table 5: GSM/EDGE Logic Control
OPeratIONaL MODe
Bs
tX_eN
GSM850/900
LOW
HIGH
DCS/PCS
HIGH
HIGH
PA DISABLED
-
Notes:
1. VBATT must be applied before taking BS and/or TX_EN High.
LOW
4
Data Sheet - Rev 2.0
11/2008

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AWT6223R 전자부품, 판매, 대치품
AWT6223R
Table 8: Electrical Characteristics for GSM850 8PSK Mode
(Unless Otherwise Specified: VBATT = 3.5 V, PIN = 3.0 dBm, Pulse Width =1154 µs, Duty = 25%
www.DataSheet4U.comZIN = ZOUT = 50 , TC = 25 °C, BS = LOW, TX_EN = HIGH, VEN = LOW)
ParaMeter
MIN tYP MaX
uNIt
COMMeNts
Operating Frequency ( FIN )
824
880
-
-
849
915
MHz
Input Power
035
dBm
PAE
20 27
-
%
FIN = 824 to 849 MHz
POUT set = +29 dBm
ACPR
200 kHz
400 kHz
600 kHz
1800 kHz
- -39 -34 dBc/30 kHz
- -63 -58 dBc/30 kHz All conditions under Polar operation
- -74 -64 dBc/30 kHz POUT = +29 dBm
- -77 -68 dBc/100 kHz
EVM
- 15
%
All Conditions under Polar operation
POUT = +29 dBm
Data Sheet - Rev 2.0
11/2008
7

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AWT6223R

WCDMA/GSM/GPRS/Polar EDGE Power Amplifier Module

ANADIGICS
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