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PDF AWT6222 Data sheet ( Hoja de datos )
| Número de pieza | AWT6222 | |
| Descripción | WCDMA/HSPA Power Amplifiers | |
| Fabricantes | Analogic Corporation | |
| Logotipo |  |
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FEATURES
• InGaP HBT Technology
• High Efficiency:
22 % @ +16 dBm POUT
(without DC/DC converter)
40 % @ maximum POUT
• Low Quiescent Current: 8 mA
• Internal Voltage Regulation
• Common VMODE Control Line
• Simplified VCC Bus PCB routing
• Reduced External Component Count
• Low Profile Surface Mount Package: 1 mm
• HSDPA Compliant
• RoHS Compliant Package, 250 oC MSL-3
AWT6222
HELP3TM Tri-band
US Cellular/Japan Cellular/IMT
UMTS/WCDMA Linear Power Amplifier Module
Data Sheet - Rev 2.1
AWT6222
APPLICATIONS
• WCDMA/HSPA JCell/IMT Dual-Band Wireless
Handsets and Data Devices
PRODUCT DESCRIPTION
The AWT6222 addresses the demand for increased
integration in dual-band handsets for cellular network
deployments. The small footprint 3 mm x 5 mm
x 1 mm surface mount RoHS compliant package
contains independent RF PA paths to ensure optimal
performance in both frequency bands, while achieving
a 25% PCB space savings compared with solutions
requiring two single-band PAs. The package pinout
was chosen to enable handset manufacturers
to easily route VCC to both power amplifiers and
simplify control with a common VMODE pin. The
device is manufactured on an advanced InGaP HBT
MMIC technology offering state-of-the-art reliability,
temperature stability, and ruggedness. The AWT6222
incorporates ANADIGICS’ HELP3™ technology to
provide low power consumption without the need for
an external voltage regulator. Two operating modes
provide optimum efficiency at high and medium/low
power output levels, thereby dramatically increasing
handset talk-time and standby-time. Its built-in voltage
regulator eliminates the need for external voltage
regulation and load switches. The 3 mm x 5 mm x 1
mm surface mount package incorporates matching
networks optimized for output power, efficiency and
linearity in a 50 Ω system.
M28 Package
14 Pin 3 mm x 5 mm x 1 mm
Surface Mount Module
VEN_CELL 1
RFIN_CELL 2
GND at slug (pad)
Bias Control
14 GND
13 RFOUT_CELL
VMODE1 3
12 VCC
VBATT 4
11 VCCA
VMODE2 (N/C) 5
10 GND
RFIN_IMT 6
VEN_IMT 7
Bias Control
9 GND
8 RFOUT_IMT
GND
Figure 1: Block Diagram
11/2008
1 page  
Table 5: Electrical Specifications - IMT (Band 1)
(TC = +25 °C, VBATT = VCC = +3.4 V, VENABLE = +2.4 V, 50 Ω system)
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COMMENTS
PARAMETER
MIN TYP MAX UNIT
POUT
AWT6222
VMODE1
Gain
25 27.5 30
12.0 14.0 16.0
dB
+28.5 dBm
+16 dBm
0V
2.4 V
ACLR1 at 5 MHz offset (1)
-
-
-41 -37.5
-43 -38
dBc
+28.5 dBm
+16 dBm
0V
2.4 V
ACLR2 at 10 MHz offset
-
-
-55 -48
-56 -48
dBc
+28.5 dBm
+16 dBm
0V
2.4 V
Power-Added Efficiency (1)
36.5 40
19 23
-
-
%
+28.5 dBm
+16 dBm
0V
2.4 V
Quiescent Current (Icq)
Low Bias Mode
- 8 13 mA VMODE1 = +2.4 V
Mode Control Current
-
0.35 0.8
mA through VMODE pins, VMODE = +2.4 V
Enable Current
-
0.3 0.8
mA through VENABLE pin
BATT Current
- 3 5 mA through VBATT pin, VMODE1 = 2.4 V
Leakage Current
-
<1 5
µA
VBATT = +4.3 V, VCC = +4.3 V,
VENABLE = 0 V, VMODE1 = 0 V
Noise in Receive Band(2)
-
-
-136.5
-142
-135
-138
dBm/Hz
POUT = +28.5 dBm, VMODE1= 0 V, V
POUT = +16 dBm, VMODE1 = +2.4 V
Harmonics
2fo
3fo, 4fo
-
-
-38 -30
-46 -35
dBc
Input Impedance
- - 2:1 VSWR
Spurious Output Level
(all spurious outputs)
- - -70 dBc See note 3
Load mismatch stress with no
permanent degradation or failure
8:1
-
- VSWR Applies over full operating range
Notes:
(1) ACLR and Efficiency measured at 1950 MHz.
(2) 2110 MHz to 2170 MHz.
(3) POUT < +28.5 dBm, In-band load VSWR < 5:1, Out-of-band load VSWR < 10:1. Applies over all operating conditions.
Data Sheet - Rev 2.1
11/2008
5
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet AWT6222.PDF ] | |
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