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PDF SI4430BDY Data sheet ( Hoja de datos )
| Número de pieza | SI4430BDY | |
| Descripción | N-Channel MOSFET | |
| Fabricantes | Vishay Siliconix | |
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Specification Comparison
Vishay Siliconix
Si4430BDY vs. Si4430DY
Description: N-Channel, 30-V (D-S) MOSFET
Package:
SO-8
Pin Out:
Identical
Part Number Replacements:
Si4430BDY-T1-E3 Replaces Si4430DY-T1-E3
Si4430BDY-T1-E3 Replaces Si4430DY-T1
Summary of Performance:
The Si4430BDY is the replacement to the original Si4430DY; both parts perform identically, including limits to the parametric
tables below.
ABSOLUTE MAXIMUM RATINGS (TA = 25oC UNLESS OTHERWISE NOTED)
Parameter
Symbol
Si4430BDY Si4430DY Unit
Drain-Source Voltage
Gate-Source Voltage
VDS
VGS
30
+20
30
+20 V
Continuous Drain Current
TA = 25°C
TA = 70°C
ID
20
16
23
19
Pulsed Drain Current
IDM 60
60 A
Continuous Source Current
(MOSFET Diode Conduction)
IS 2.7 2.9
Power Dissipation
TA = 25°C
TA = 70°C
PD
3.0
2.0
3.5
2.2 W
Operating Junction & Storage Temperature Range
Tj & Tstg
-55 to 150
-55 to 150
°C
Maximum Junction-to-Ambient
RthJA
41
35 °C/W
SPECIFICATIONS (TJ = 25OC UNLESS OTHERWISE NOTED)
Si4430BDY
Parameter
Symbol Min Typ
Static
Gate-Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
VGS = 10 V
VGS(th)
IGSS
IDSS
ID(on)
1.0
40
Drain-Source On-Resistance
VGS= 10 V
VGS = 4.5 V
rDS(on)
0.0037
0.0048
Forward Transconductance
Diode Forward Voltage
Dynamic
Total Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Switching
Turn-On Time*
Turn-Off Time*
Source-Drain Reverse Recovery Time
gfs
VSD
Qg
Qgs
Qgd
Rg
td(on)
tr
td(off)
tf
trr
80
0.72
24
10.5
7.5
0.5 1.1
20
14
60
18
35
Max
3.0
+100
1
0.0045
0.006
1.1
36
1.7
30
22
90
30
50
Si4430DY
Min Typ
Max
1.7
+100
1
30
0.004
NS
0.0068
0.008
80
0.8 1.2
36
15
12
1.0 2.2
20
15
105
40
50
55
3.7
30
23
160
60
80
Unit
V
nA
µA
A
Ω
S
V
nC
Ω
ns
Document Number 74061
06-May-05
www.vishay.com
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