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PDF PTVS9V0S1UR Data sheet ( Hoja de datos )
| Número de pieza | PTVS9V0S1UR | |
| Descripción | (PTVSxxxS1UR) 400 W Transient Voltage Suppressor | |
| Fabricantes | NXP Semiconductors | |
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PTVSxS1UR series
400 W Transient Voltage Suppressor
Rev. 01 — 2 February 2009
Product data sheet
1. Product profile
1.1 General description
400 W unidirectional Transient Voltage Suppressor (TVS) in a SOD123W small and flat
lead low-profile Surface-Mounted Device (SMD) plastic package, designed for transient
overvoltage protection.
1.2 Features
I Rated peak pulse power: PPPM = 400 W I Small plastic package suitable for
(350 W for 3V3)
surface-mounted design
I Reverse standoff voltage range:
I Very low package height: 1 mm
VRWM = 3.3 V to 18 V
I Reverse current: IRM = 0.001 µA
I AEC-Q101 qualified
1.3 Applications
I Power supply protection
I Automotive application
I Industrial application
I Power management
1.4 Quick reference data
Table 1.
Symbol
PPPM
VRWM
Quick reference data
Parameter
rated peak pulse power
reverse standoff voltage
Conditions
Min Typ Max Unit
[1][2] - - 400 W
3.3 -
18 V
[1] In accordance with IEC 61643-321 (10/1000 µs current waveform).
[2] For PTVS3V3S1UR: PPPM = 350 W
1 page  
www.DNatXaSPheSete4Um.coicmonductors
PTVSxS1UR series
400 W Transient Voltage Suppressor
150
IPP
(%)
100
100 % IPP; 10 µs
006aab319
50 % IPP; 1000 µs
50
1.2
PPPM
PPPM(25°C)
0.8
0.4
006aab321
0
0 1.0 2.0 3.0 4.0
tp (ms)
Fig 1. 10/1000 µs pulse waveform according to
IEC 61643-321
105
PPPM
(W)
104
103
(1)
(2)
0
0 50 100 150 200
Tj (°C)
Fig 2.
Relative variation of rated peak pulse power as
a function of junction temperature; typical
values
006aab418
102
10−1
1
10 102 103
Tamb = 25 °C
(1) PTVS5V0S1UR to PTVS18VS1UR
(2) PTVS3V3S1UR
Fig 3. Rated peak pulse power as a function of pulse duration; typical values
tp (µs)
104
PTVSXS1UR_SER_1
Product data sheet
Rev. 01 — 2 February 2009
© NXP B.V. 2009. All rights reserved.
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| PTVS9V0S1UR | (PTVSxxxS1UR) 400 W Transient Voltage Suppressor | NXP Semiconductors |
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