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부품번호 | BLF6G10LS-200 기능 |
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기능 | Power LDMOS transistor | ||
제조업체 | NXP Semiconductors | ||
로고 | |||
전체 11 페이지수
www.DataSheet4U.com
BLF6G10LS-200
Power LDMOS transistor
Rev. 01 — 18 January 2008
Preliminary data sheet
1. Product profile
1.1 General description
200 W LDMOS power transistor for base station applications at frequencies from
800 MHz to 1000 MHz.
Table 1. Typical performance
Typical RF performance at Tcase = 25 °C in a class-AB production test circuit.
Mode of operation
f
VDS
PL(AV)
Gp
ηD
(MHz)
(V) (W)
(dB) (%)
2-carrier W-CDMA
869 to 894
28 40
20 27
ACPR
(dBc)
−41[1]
[1] Test signal: 3GPP; test model 1; 64 DPCH; PAR = 7.5 dB at 0.01 % probability on CCDF per carrier; carrier
spacing 5 MHz.
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
1.2 Features
I Typical 2-carrier W-CDMA performance at frequencies of 869 MHz and 894 MHz, a
supply voltage of 28 V and an IDq of 1400 mA:
N Average output power = 40 W
N Power gain = 20 dB
N Efficiency = 27 %
N ACPR = −41 dBc
I Easy power control
I Integrated ESD protection
I Excellent ruggedness
I High efficiency
I Excellent thermal stability
I Designed for broadband operation (800 MHz to 1000 MHz)
I Internally matched for ease of use
I Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
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BLF6G10LS-200
Power LDMOS transistor
7.2 One-tone CW
22
Gp
(dB)
21
20
Gp
001aah526
70
ηD
(%)
60
50
19 ηD
18
40
30
17 20
16 10
15
0
0
40 80 120 160 200 240
PL (W)
VDS = 28 V; IDq = 1400 mA; f = 894 MHz.
Fig 1. One-tone CW power gain and drain efficiency as functions of load power;
typical values
7.3 Two-tone CW
22
Gp
(dB)
20
Gp
ηD
001aah534
60
ηD
(%)
40
18 20
16
0
0
50 100 150 200 250 300 350
PL(PEP) (W)
VDS = 28 V; IDq = 1400 mA; f1 = 893.95 MHz; f2 = 894.05 MHz.
Fig 2. Two-tone CW power gain and drain efficiency as functions of peak envelope load
power; typical values
BLF6G10LS-200_1
Preliminary data sheet
Rev. 01 — 18 January 2008
© NXP B.V. 2008. All rights reserved.
4 of 11
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BLF6G10LS-200
Power LDMOS transistor
Table 8. List of components (see Figure 7 and Figure 8)
All capacitors should be soldered vertically except C20.
Component
Description
Value
C1, C2, C3, C4, C5 multilayer ceramic chip capacitor
68 pF
[1]
C6, C7, C8, C9
multilayer ceramic chip capacitor
330 nF
[2]
C10, C11
multilayer ceramic chip capacitor
4.7 µF
[2]
C12, C13
Electrolytic capacitor
220 µF; 63 V
C14
multilayer ceramic chip capacitor
4.7 pF; 50 V [1]
C15
multilayer ceramic chip capacitor
9.1 pF
[1]
C18, C19
multilayer ceramic chip capacitor
10 pF
[1]
C20
multilayer ceramic chip capacitor
1.5 pF; 20 V [1]
L1 Ferrite SMD bead
-
Q1 BLC6G10LS-160
-
R1, R2, R3
SMD resistor
9.1 Ω; 0.1 W
Remarks
Ferroxcube BDS 3/3/4.6-4S2 or equivalent
[1] American Technical Ceramics type 100B or capacitor of same quality.
[2] TDK or capacitor of same quality.
BLF6G10LS-200_1
Preliminary data sheet
Rev. 01 — 18 January 2008
© NXP B.V. 2008. All rights reserved.
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