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PDF BLF6G10-45 Data sheet ( Hoja de datos )
| Número de pieza | BLF6G10-45 | |
| Descripción | Power LDMOS Transistor | |
| Fabricantes | NXP Semiconductors | |
| Logotipo |  |
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BLF6G10-45
Power LDMOS transistor
Rev. 01 — 3 February 2009
Product data sheet
1. Product profile
1.1 General description
45 W LDMOS power transistor for base station applications at frequencies from 800 MHz
to 1000 MHz.
Table 1. Typical performance
RF performance at Tcase = 25 °C in a common source class-AB production test circuit.
Mode of operation
f
VDS
PL(AV) Gp
ηD
(MHz)
(V) (W) (dB) (%)
2-carrier W-CDMA
920 to 960
28 1.0 22.5 7.8
ACPR
(dBc)
−48.5[1]
[1] Test signal: 3GPP; test model 1; 64 DPCH; PAR = 7.5 dB at 0.01 % probability on CCDF per carrier; carrier
spacing 5 MHz
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
1.2 Features
I Typical 2-carrier W-CDMA performance at frequencies of 920 MHz and 960 MHz, a
supply voltage of 28 V and an IDq of 350 mA:
N Average output power = 1.0 W
N Gain = 22.5 dB
N Efficiency = 7.8 %
N ACPR = −48.5 dBc
I Easy power control
I Integrated ESD protection
I Excellent ruggedness
I High efficiency
I Excellent thermal stability
I Designed for broadband operation (800 MHz to 1000 MHz)
I Internally matched for ease of use
I Compliant to Directive 2002/95/EC, regarding restriction of hazardous substances
(RoHS)
1 page  
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BLF6G10-45
Power LDMOS transistor
25
Gp
(dB)
23
21
Gp
(1)
(2)
001aah530
16
ηD
(%)
12
(1) (2)
8
−40
ACPR
(dBc)
−45
−50
001aah531
(1)
(2)
19
ηD
4 −55
17 0
20 24 28 32 36
PL(AV) (dBm)
VDS = 28 V; IDq = 350 mA; f1 = 952.5 MHz;
f2 = 957.5 MHz; carrier spacing 5 MHz.
(1) f = 955 MHz
(2) f = 925 MHz
Fig 4. 2-carrier W-CDMA power gain and drain
efficiency as functions of average load power;
typical values
−60
20 24 28 32 36
PL(AV) (dBm)
VDS = 28 V; IDq = 350 mA; f1 = 952.5 MHz;
f2 = 957.5 MHz; carrier spacing 5 MHz.
(1) f = 955 MHz
(2) f = 925 MHz
Fig 5. 2-carrier W-CDMA adjacent channel power
ratio, low frequency range as functions of
average load power; typical values
BLF6G10-45_1
Product data sheet
Rev. 01 — 3 February 2009
© NXP B.V. 2009. All rights reserved.
5 of 11
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14. Contents
1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.1 General description. . . . . . . . . . . . . . . . . . . . . . 1
1.2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
2 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2
3 Ordering information . . . . . . . . . . . . . . . . . . . . . 2
4 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2
5 Thermal characteristics. . . . . . . . . . . . . . . . . . . 2
6 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 3
7 Application information. . . . . . . . . . . . . . . . . . . 3
7.1 Ruggedness in class-AB operation. . . . . . . . . . 3
8 Test information . . . . . . . . . . . . . . . . . . . . . . . . . 6
9 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 8
10 Abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
11 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . 9
12 Legal information. . . . . . . . . . . . . . . . . . . . . . . 10
12.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 10
12.2 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
12.3 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
12.4 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
13 Contact information. . . . . . . . . . . . . . . . . . . . . 10
14 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
BLF6G10-45
Power LDMOS transistor
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2009.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
Date of release: 3 February 2009
Document identifier: BLF6G10-45_1
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