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부품번호 | BLF6G20-180RN 기능 |
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기능 | Power LDMOS Transistor | ||
제조업체 | NXP Semiconductors | ||
로고 | |||
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BLF6G20-180RN;
BLF6G20LS-180RN
Power LDMOS transistor
Rev. 01 — 17 November 2008
Product data sheet
1. Product profile
1.1 General description
180 W LDMOS power transistor for base station applications at frequencies from
1800 MHz to 2000 MHz.
Table 1. Typical performance
Typical RF performance at Tcase = 25 °C in a class-AB production test circuit.
Mode of operation
f
VDS PL(AV) Gp ηD IMD3
(MHz)
(V) (W) (dB) (%) (dBc)
2-carrier WCDMA
1930 to 1990 30 40
17.2 27
−38[1]
ACPR
(dBc)
−41[1]
[1] Test signal: 3GPP; test model 1; 64 DPCH; PAR = 7 dB at 0.01 % probability on CCDF per carrier;
carrier spacing 10 MHz.
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
1.2 Features
I Typical 2-carrier WCDMA performance at frequencies of 1930 MHz and 1990 MHz, a
supply voltage of 30 V and an IDq of 1400 mA:
N Average output power = 40 W
N Power gain = 17.2 dB
N Efficiency = 27 %
N IMD3 = −41 dBc
N ACPR = −38 dBc
I Easy power control
I Integrated ESD protection
I Enhanced ruggedness
I High efficiency
I Excellent thermal stability
I Designed for broadband operation (1800 MHz to 2000 MHz)
I Internally matched for ease of use
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BLF6G20(LS)-180RN
Power LDMOS transistor
7.2 One-tone CW
19
Gp
(dB)
18
Gp
17
ηD
16
001aai651
50
ηD
(%)
40
30
20
15 10
14
0
10
60 120 180
PL (W)
Fig 1.
VDS = 30 V; IDq = 1400 mA; f = 1960 MHz.
One-tone CW power gain and drain efficiency as function of load power;
typical values
7.3 Two-tone CW
19
Gp
(dB)
18
17
16
15
Gp
ηD
001aai652
50
ηD
(%)
40
30
20
10
−20
IMD
(dBc)
−30
−40
−50
001aai653
IMD3
IMD5
IMD7
14
0
10
60 120 180
PL(PEP) (W)
Fig 2.
VDS = 30 V; IDq = 1400 mA; f = 1960 MHz.
Two-tone CW power gain and drain efficiency
as function of peak envelope load power;
typical values
−60
0
60 120 180
PL(PEP) (W)
Fig 3.
VDS = 30 V; IDq = 1400 mA; f = 1960 MHz.
Two-tone CW intermodulation distortion as a
function of peak envelope load power; typical
values
BLF6G20-180RN_20LS-180RN_1
Product data sheet
Rev. 01 — 17 November 2008
© NXP B.V. 2008. All rights reserved.
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BLF6G20(LS)-180RN
Power LDMOS transistor
Table 8. List of components (see Figure 6 and Figure 7) …continued
The Printed-Circuit Board (PCB) used is a double copper-clad Taconic RF35 with εr = 3.5 and thickness = 0.76 mm.
Component
Description
Value
Remarks
L1
ferrite SMD bead
- Ferroxcube BDS 3/3/4.6-4S2 or equivalent
R1 SMD resistor
2.7 Ω
R2 SMD resistor
6.8 Ω
[1] Solder vertically.
BLF6G20-180RN_20LS-180RN_1
Product data sheet
Rev. 01 — 17 November 2008
© NXP B.V. 2008. All rights reserved.
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