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부품번호 MRFE6S9045NR1 기능
기능 RF Power Field Effect Transistor
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MRFE6S9045NR1 데이터시트, 핀배열, 회로
Freescale Semiconductor
Technical Data
www.DataSheet4U.com
RF Power Field Effect Transistor
N - Channel Enhancement - Mode Lateral MOSFET
Designed for broadband commercial and industrial applications with fre-
quencies up to 1000 MHz. The high gain and broadband performance of this
device makes it ideal for large - signal, common - source amplifier applications
in 28 volt base station equipment.
Typical Single - Carrier N
ITDrQaff=ic3C50odmeAs ,8PTohutro=u1g0h
-WCaDttMs AAvPge.,rfIoSrm- 9a5ncCeD@MA88(P0ilMotH, Sz,yVncD,DP=ag2i8ngV,olts,
13) Channel Bandwidth = 1.2288 MHz. PAR =
9.8 dB @ 0.01% Probability on CCDF.
Power Gain — 22.1 dB
Drain Efficiency — 32%
ACPR @ 750 kHz Offset — - 46 dBc in 30 kHz Channel Bandwidth
Capable of Handling 5:1 VSWR, @ 32 Vdc, 880 MHz, 3 dB Overdrive,
Designed for Enhanced Ruggedness
GSM EDGE Application
TPyopuPtico=awl1eG6rSWGMaaitEntsD—AGv2Eg0.P, dFeBurflol rFmreaqnuceen: cVyDDBa=n2d8(9V2o0lt-s9, 6ID0QM=H3z5)0 mA,
Drain Efficiency — 46%
Spectral Regrowth @ 400 kHz Offset = - 62 dBc
Spectral Regrowth @ 600 kHz Offset = - 78 dBc
EVM — 1.5% rms
GSM Application
Typical GSM Performance:
Full Frequency Band (920 -
9V6D0DM=H2z8)
Volts,
IDQ
=
350
mA,
Pout
=
45
Watts,
Power Gain — 20 dB
Drain Efficiency — 68%
Features
Characterized with Series Equivalent Large - Signal Impedance Parameters
Integrated ESD Protection
225°C Capable Plastic Package
RoHS Compliant
In Tape and Reel. R1 Suffix = 500 Units per 24 mm, 13 inch Reel.
Document Number: MRFE6S9045N
Rev. 0, 10/2007
MRFE6S9045NR1
880 MHz, 10 W AVG., 28 V
SINGLE N - CDMA
LATERAL N - CHANNEL
BROADBAND
RF POWER MOSFET
CASE 1265- 09, STYLE 1
TO - 270 - 2
PLASTIC
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain - Source Voltage
Gate - Source Voltage
Maximum Operation Voltage
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature (1,2)
VDSS
VGS
VDD
Tstg
TC
TJ
- 0.5, +66
- 0.5, + 12
32, +0
- 65 to +150
150
225
Vdc
Vdc
Vdc
°C
°C
°C
Table 2. Thermal Characteristics
Characteristic
Symbol
Value (2,3)
Unit
Thermal Resistance, Junction to Case
Case Temperature 81°C, 45 W CW
Case Temperature 79°C, 10 W CW
RθJC
°C/W
1.0
1.1
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Tools (Software & Tools)/Calculators to access MTTF calculators
by product.
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
© Freescale Semiconductor, Inc., 2007. All rights reserved.
RF Device Data
Freescale Semiconductor
MRFE6S9045NR1
1




MRFE6S9045NR1 pdf, 반도체, 판매, 대치품
www.DataSheet4U.com
R1
VBIAS
+
C15
B1
R3
R2
C7
RF
INPUT Z1
Z2 Z3 Z4
Z5 Z6
L1
Z7
C1
C2 C3
C5
Z8 Z9
C4 C6
B2
VSUPPLY
+ ++
L2 C10 C16 C17 C18
C8
Z10 Z11 Z12 Z13
Z14 Z15
RF
Z16 OUTPUT
C9
DUT
C14
C11 C12 C13
Z1 0.215x 0.065Microstrip
Z2 0.221x 0.065Microstrip
Z3 0.500x 0.100Microstrip
Z4 0.460x 0.270Microstrip
Z5 0.040x 0.270Microstrip
Z6 0.280x 0.270x 0.530Taper
Z7 0.087x 0.525Microstrip
Z8 0.435x 0.525Microstrip
Z9 0.057x 0.525Microstrip
Z10
Z11
Z12
Z13
Z14
Z15
Z16
PCB
0.360x 0.270Microstrip
0.063x 0.270Microstrip
0.360x 0.065Microstrip
0.095x 0.065Microstrip
0.800x 0.065Microstrip
0.260x 0.065Microstrip
0.325x 0.065Microstrip
Taconic RF - 35 0.030, εr = 3.5
Figure 1. MRFE6S9045NR1 Test Circuit Schematic
Table 6. MRFE6S9045NR1 Test Circuit Component Designations and Values
Part
Description
Part Number
B1 Ferrite Bead
2743019447
B2 Ferrite Bead
2743021447
C1, C7, C10, C14
47 pF Chip Capacitors
ATC100B470JT500XT
C2, C4, C12
0.8 - 8.0 pF Variable Capacitors, Gigatrim
27291SL
C3
15 pF Chip Capacitor
ATC100B150JT500XT
C5, C6
12 pF Chip Capacitors
ATC100B120JT500XT
C8, C9
13 pF Chip Capacitors
ATC100B130JT500XT
C11
7.5 pF Chip Capacitor
ATC100B7R5JT500XT
C13
0.6 - 4.5 pF Variable Capacitor, Gigatrim
27271SL
C15, C16, C17
10 μF, 35 V Tantalum Capacitors
T491D106K035AT
C18
220 μF, 50 V Electrolytic Capacitor
EMVY500ADA221MJA0G
L1, L2
12.5 nH Inductors
A04T - 5
R1
1 kΩ, 1/4 W Chip Resistor
CRCW12061001FKEA
R2
560 kΩ, 1/4 W Chip Resistor
CRCW120656001FKEA
R3
12 Ω, 1/4 W Chip Resistor
CRCW120612R0FKEA
Manufacturer
Fair Rite
Fair Rite
ATC
Johanson
ATC
ATC
ATC
ATC
Johanson
Kemet
Nippon Chemi - con
Coilcraft
Vishay
Vishay
Vishay
MRFE6S9045NR1
4
RF Device Data
Freescale Semiconductor

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MRFE6S9045NR1 전자부품, 판매, 대치품
www.DataSheet4U.com
−10
VDD = 28 Vdc, IDQ = 350 mA, f1 = 880 MHz
−20 f2 = 880.1 MHz, Two−Tone Measurements
−30
−40
3rd Order
−50
−60 5th Order
TYPICAL CHARACTERISTICS
0
VDD = 28 Vdc, Pout = 48 W (PEP), IDQ = 350 mA
−10 Two−Tone Measurements
(f1 + f2)/2 = Center Frequency of 880 MHz
−20
IM3−U
−30
IM3−L
−40 IM5−L
IM7−L IM7−U
−50 IM5−U
−70
−80
1
7th Order
10
100 200
Pout, OUTPUT POWER (WATTS) PEP
Figure 7. Intermodulation Distortion Products
versus Output Power
−60
−70
1
10 100
TWO−TONE SPACING (MHz)
Figure 8. Intermodulation Distortion Products
versus Tone Spacing
56
Ideal
55 P6dB = 49.21 dBm (83.36 W)
54
53 P3dB = 48.40 dBm (69.18 W)
52
51
P1dB = 47.38 dBm
50 (54.7 W)
49
48
47
46
24 25 26 27
Actual
VDD = 28 Vdc, IDQ = 350 mA, Pulsed CW
12 μsec(on), 1% Duty Cycle, f = 880 MHz
28 29 30 31 32 33 34
Pin, INPUT POWER (dBm)
Figure 9. Pulsed CW Output Power versus
Input Power
70
65 VDD = 28 Vdc, IDQ = 350 mA
60 f = 880 MHz, N−CDMA IS−95 Pilot
55 Sync, Paging, Traffic Codes 8
50 Through 13
45
40
35
30
25 Gps
ACPR
20
15
10 ηD
5 ALT1
0
1 10
−5
−30_C 25_C −10
85_C
−15
85_C
25_C
−20
−25
−30_C −30
25_C
−35
−40
85_C −30_C −45
TC = −30_C
−50
−55
85_C
−60
25_C
−65
−70
−75
100
Pout, OUTPUT POWER (WATTS) AVG.
Figure 10. Single - Carrier N - CDMA ACPR, ALT1, Power
Gain and Drain Efficiency versus Output Power
RF Device Data
Freescale Semiconductor
MRFE6S9045NR1
7

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부품번호상세설명 및 기능제조사
MRFE6S9045NR1

RF Power Field Effect Transistor

Freescale Semiconductor
Freescale Semiconductor

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