Datasheet.kr   

MRFE6S9060NR1 데이터시트 PDF




Freescale Semiconductor에서 제조한 전자 부품 MRFE6S9060NR1은 전자 산업 및 응용 분야에서
광범위하게 사용되는 반도체 소자입니다.


PDF 형식의 MRFE6S9060NR1 자료 제공

부품번호 MRFE6S9060NR1 기능
기능 RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET
제조업체 Freescale Semiconductor
로고 Freescale Semiconductor 로고


MRFE6S9060NR1 데이터시트 를 다운로드하여 반도체의 전기적 특성과 매개변수에 대해 알아보세요.




전체 15 페이지수

미리보기를 사용할 수 없습니다

MRFE6S9060NR1 데이터시트, 핀배열, 회로
Freescale Semiconductor
Technical Data
www.DataSheet4U.com
RF Power Field Effect Transistor
N - Channel Enhancement - Mode Lateral MOSFET
Designed for broadband commercial and industrial applications with
frequencies up to 1000 MHz. The high gain and broadband performance of
this device makes it ideal for large - signal, common - source amplifier
applications in 28 volt base station equipment.
Typical Single - Carrier N
ITDrQaff=ic4C50odmeAs ,8PTohutro=u1g4h
-WCaDttMs AAvPge.,rfIoSrm- 9a5ncCeD@MA88(P0ilMotH, Sz,yVncD,DP=ag2i8ngV,olts,
13) Channel Bandwidth = 1.2288 MHz. PAR =
9.8 dB @ 0.01% Probability on CCDF.
Power Gain — 21.1 dB
Drain Efficiency — 33%
ACPR @ 750 kHz Offset — - 45.7 dBc in 30 kHz Channel Bandwidth
Capable of Handling 10:1 VSWR, @ 32 Vdc, 880 MHz, 3 dB Overdrive,
Designed for Enhanced Ruggedness
GSM EDGE Application
TPyopuPtico=awl2eG1rSWGMaaitEntsD—AGv2Eg0.P, dFeBurflol rFmreaqnuceen: cVyDDBa=n2d8(9V2o0lt-s9, 6ID0QM=H5z0)0 mA,
Drain Efficiency — 46%
Spectral Regrowth @ 400 kHz Offset = - 62 dBc
Spectral Regrowth @ 600 kHz Offset = - 78 dBc
EVM — 1.5% rms
GSM Application
Typical GSM Performance:
Full Frequency Band (920 -
9V6D0DM=H2z8)
Volts,
IDQ
=
500
mA,
Pout
=
60
Watts,
Power Gain — 20 dB
Drain Efficiency — 63%
Features
Characterized with Series Equivalent Large - Signal Impedance Parameters
Integrated ESD Protection
225°C Capable Plastic Package
RoHS Compliant
In Tape and Reel. R1 Suffix = 500 Units per 24 mm, 13 inch Reel.
Document Number: MRFE6S9060N
Rev. 1, 10/2007
MRFE6S9060NR1
880 MHz, 14 W AVG., 28 V
SINGLE N - CDMA
LATERAL N - CHANNEL
BROADBAND
RF POWER MOSFET
CASE 1265- 09, STYLE 1
TO - 270 - 2
PLASTIC
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain - Source Voltage
Gate - Source Voltage
Maximum Operation Voltage
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature (1,2)
Table 2. Thermal Characteristics
VDSS
VGS
VDD
Tstg
TC
TJ
- 0.5, +66
- 0.5, + 12
32, +0
- 65 to +150
150
225
Vdc
Vdc
Vdc
°C
°C
°C
Characteristic
Symbol
Value (2,3)
Unit
Thermal Resistance, Junction to Case
Case Temperature 80°C, 60 W CW
Case Temperature 78°C, 14 W CW
RθJC
0.77
0.88
°C/W
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Tools (Software & Tools)/Calculators to access MTTF calculators
by product.
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
© Freescale Semiconductor, Inc., 2007. All rights reserved.
RF Device Data
Freescale Semiconductor
MRFE6S9060NR1
1




MRFE6S9060NR1 pdf, 반도체, 판매, 대치품
www.DataSheet4U.com
R1
VBIAS
++
C9 C7
B1
R3
R2
C8
RF
INPUT Z1
Z2 Z3 Z4
Z5 Z6
L1
Z7
C1
C2 C3
Z8 C6 Z9
C4 C5
B2 R4 VSUPPLY
++ +
C15 C16 C17 C19
C18
C11 L2
Z10 Z11
Z12
Z13
RF
Z14 Z15 OUTPUT
C10
DUT
C14
C12 C13
Z1 0.215x 0.065Microstrip
Z2 0.221x 0.065Microstrip
Z3 0.500x 0.100Microstrip
Z4 0.460x 0.270Microstrip
Z5 0.040x 0.270Microstrip
Z6 0.280x 0.270x 0.530Taper
Z7 0.087x 0.525Microstrip
Z8 0.435x 0.525Microstrip
Z9
Z10
Z11
Z12
Z13
Z14
Z15
PCB
0.057x 0.525Microstrip
0.360x 0.270Microstrip
0.063x 0.270Microstrip
0.360x 0.065Microstrip
0.170x 0.065Microstrip
0.880x 0.065Microstrip
0.260x 0.065Microstrip
Taconic RF - 35 0.030, εr = 3.5
Figure 1. MRFE6S9060NR1 Test Circuit Schematic
Table 6. MRFE6S9060NR1 Test Circuit Component Designations and Values
Part
Description
Part Number
B1 Ferrite Bead
2743019447
B2 Ferrite Bead
274021447
C1, C8, C14, C15
47 pF Chip Capacitors
ATC100B470JT500XT
C2, C4, C13
0.8 - 8.0 pF Variable Capacitors, Gigatrim
2729152
C3
3.0 pF Chip Capacitor
ATC100B3R0JT500XT
C5, C6
15 pF Chip Capacitors
ATC100B150JT500XT
C7, C16, C17
10 μF, 35 V Tantalum Capacitors
T491D106K035AT
C9
100 μF, 50 V Electrolytic Capacitor
MCHT101M1HB - 1017 - RH
C10, C11
12 pF Chip Capacitors
ATC100B120JT500XT
C12
4.3 pF Chip Capacitor
ATC100B4R3JT500XT
C18
0.56 μF Chip Capacitor
ATC700A561MT150XT
C19
470 μF, 63 V Electrolytic Capacitor
EKME630ELL471MK255
L1, L2
12.5 nH Inductor
A04T - 5
R1
1 kΩ, 1/4 W Chip Resistor
CRCW12061001FKEA
R2
560 kΩ, 1/4 W Chip Resistor
CRCW12065600FKEA
R3
12 Ω, 1/4 W Chip Resistor
CRCW120612R0FKEA
R4
27 W, 1/4 W Chip Resistor
CRCW120627R0FKEA
Manufacturer
Fair Rite
Fair Rite
ATC
Johanson
ATC
ATC
Kemet
Multicomp
ATC
ATC
ATC
Multicomp
Coilcraft
Vishay
Vishay
Vishay
Vishay
MRFE6S9060NR1
4
RF Device Data
Freescale Semiconductor

4페이지










MRFE6S9060NR1 전자부품, 판매, 대치품
www.DataSheet4U.com
−10
VDD = 28 Vdc, IDQ = 450 mA
−20 f1 = 880 MHz, f2 = 880.1 MHz
Two−Tone Measurements
−30
TYPICAL CHARACTERISTICS
0
VDD = 28 Vdc, Pout = 60 W (PEP)
−10 IDQ = 450 mA, Two−Tone Measurements
(f1 + f2)/2 = Center Frequency of 880 MHz
−20
−40
−50
3rd Order
−60
5th Order
−70
−80
1
7th Order
10
100 200
Pout, OUTPUT POWER (WATTS) PEP
Figure 7. Intermodulation Distortion Products
versus Output Power
−30 IM3−U
−40 IM3−L IM5−U
IM5−L
−50 IM7−U
−60 IM7−L
−70
0.1
1
10 80
TWO−TONE SPACING (MHz)
Figure 8. Intermodulation Distortion Products
versus Tone Spacing
58
Ideal
57 P6dB = 51.31 dBm (135.21 W)
56
55 P3dB = 50.39 dBm (109.4 W)
54
53
P1dB = 49.41 dBm
52 (87.3 W)
51
50
49
48
27 28 29 30
31
Actual
VDD = 28 Vdc, IDQ = 450 mA
Pulsed CW, 12 μsec(on)
1% Duty Cycle, f = 880 MHz
32 33 34 35 36 37
Pin, INPUT POWER (dBm)
Figure 9. Pulsed CW Output Power versus
Input Power
65
60 VDD = 28 Vdc, IDQ = 450 mA
f = 880 MHz, N−CDMA IS−95
55 Pilot, Sync, Paging, Traffic Codes
50 8 Through 13
45
40
35
30 ACPR
25
20
15 Gps
10 ηD
5 ALT1
0
1 10
TC = −30_C
−15
−20
25_C
−25
85_C
−30_C
25_C
−30
−35
−40
−45
−30_C
85_C −50
−55
−30_C −60
85_C
25_C
−65
−70
−75
−80
100
Pout, OUTPUT POWER (WATTS) AVG.
Figure 10. Single - Carrier N - CDMA ACPR, ALT1, Power Gain
and Drain Efficiency versus Output Power
RF Device Data
Freescale Semiconductor
MRFE6S9060NR1
7

7페이지


구       성 총 15 페이지수
다운로드[ MRFE6S9060NR1.PDF 데이터시트 ]

당사 플랫폼은 키워드, 제품 이름 또는 부품 번호를 사용하여 검색할 수 있는

포괄적인 데이터시트를 제공합니다.


구매 문의
일반 IC 문의 : 샘플 및 소량 구매
-----------------------------------------------------------------------

IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한
광범위한 전력 반도체를 판매합니다.

전력 반도체 전문업체

상호 : 아이지 인터내셔날

사이트 방문 :     [ 홈페이지 ]     [ 블로그 1 ]     [ 블로그 2 ]



관련 데이터시트

부품번호상세설명 및 기능제조사
MRFE6S9060NR1

RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET

Freescale Semiconductor
Freescale Semiconductor

DataSheet.kr       |      2020   |     연락처      |     링크모음      |      검색     |      사이트맵