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PDF MRFE6S9125NR1 Data sheet ( Hoja de datos )
| Número de pieza | MRFE6S9125NR1 | |
| Descripción | N-Channel Enhancement-Mode Lateral MOSFETs | |
| Fabricantes | Freescale Semiconductor | |
| Logotipo |  |
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Freescale Semiconductor
Technical Data
www.DataSheet4U.com
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
Designed for broadband commercial and industrial applications with frequen-
cies up to 1000 MHz. The high gain and broadband performance of these de-
vices make them ideal for large-signal, common-source amplifier applications
in 28 volt base station equipment.
N - CDMA Application
• ITCDyoQpdi=ecas9l85S0TinmhgrAloe,u-PgChoau1rtr3=ie)r2CN7h-WaCnaDntteMsl AABvaPgne.d,rwfIoSirdm-t9ha5n=Cc1eD.2@M2A888(8PM0ilHMotzH,.SzP,yAnVRcD,D=P=9a.g28i8ndgVB,oT@ltrsa,ffic
0.01% Probability on CCDF.
Power Gain — 20.2 dB
Drain Efficiency — 31%
ACPR @ 750 kHz Offset = - 45.7 dBc in 30 kHz Bandwidth
• Capable of Handling 10:1 VSWR, @ 32 Vdc, 880 MHz, 3 dB Overdrive,
Designed for Enhanced Ruggedness
GSM EDGE Application
•
TPyopuPtico=awl6eG0rSWGMaaitEntsD—AGv2Eg0.P, dFeBurflol rFmreaqnuceen: cVyDDBa=n2d8(8V6o5lt-s9, 6ID0QM=H7z0o0r
mA,
920
-
960
MHz)
Drain Efficiency — 40%
Spectral Regrowth @ 400 kHz Offset = - 63 dBc
Spectral Regrowth @ 600 kHz Offset = - 78 dBc
EVM — 1.8% rms
GSM Application
• 1T2yp5icWaal GttsS, MFuPlleFrfroerqmuaennccey:BVaDnDd=(92280V- 9o6lt0s,MIDHQz=) 700 mA, Pout =
Power Gain — 19 dB
Drain Efficiency — 62%
Features
• Characterized with Series Equivalent Large - Signal Impedance Parameters
• Internally Matched for Ease of Use
• Integrated ESD Protection
• 225°C Capable Plastic Package
• RoHS Compliant
• In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.
Document Number: MRFE6S9125N
Rev. 0, 10/2007
MRFE6S9125NR1
MRFE6S9125NBR1
880 MHz, 27 W AVG., 28 V
SINGLE N - CDMA, GSM EDGE
LATERAL N - CHANNEL
RF POWER MOSFETs
CASE 1486 - 03, STYLE 1
TO - 270 WB - 4
PLASTIC
MRF6S9125NR1
CASE 1484 - 04, STYLE 1
TO - 272 WB - 4
PLASTIC
MRF6S9125NBR1
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain - Source Voltage
Gate - Source Voltage
Maximum Operation Voltage
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature (1,2)
VDSS
VGS
VDD
Tstg
TC
TJ
- 0.5, +66
- 0.5, +12
32, +0
- 65 to +150
150
225
Vdc
Vdc
Vdc
°C
°C
°C
Table 2. Thermal Characteristics
Characteristic
Symbol
Value (2,3)
Unit
Thermal Resistance, Junction to Case
Case Temperature 80°C, 125 W CW
Case Temperature 76°C, 27 W CW
RθJC
0.44
0.45
°C/W
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Tools (Software & Tools)/Calculators to access MTTF calculators
by product.
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
© Freescale Semiconductor, Inc., 2007. All rights reserved.
RF Device Data
Freescale Semiconductor
MRFE6S9125NR1 MRFE6S9125NBR1
1
1 page  
www.DataSheet4U.com
C9
VGG
C10
C1
C8 C7
C20 C21
C22
C6
R2
R1 C4
L1
C2
C5
C3
C19
C11
L2
C18
C14
VDD
C23
C17
C13 C15
C16
C12
900 MHz
TO272 WB
Rev. 0
Figure 2. MRFE6S9125NR1(NBR1) Test Circuit Component Layout
RF Device Data
Freescale Semiconductor
MRFE6S9125NR1 MRFE6S9125NBR1
5
5 Page 
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PACKAGE DIMENSIONS
RF Device Data
Freescale Semiconductor
MRFE6S9125NR1 MRFE6S9125NBR1
11
11 Page | ||
| Páginas | Total 18 Páginas | |
| PDF Descargar | [ Datasheet MRFE6S9125NR1.PDF ] | |
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