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PDF MRFE6S9135HR3 Data sheet ( Hoja de datos )
| Número de pieza | MRFE6S9135HR3 | |
| Descripción | N-Channel Enhancement-Mode Lateral MOSFETs | |
| Fabricantes | Freescale Semiconductor | |
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Freescale Semiconductor
Technical Data
www.DataSheet4U.com
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
Designed for broadband commercial and industrial applications with
frequencies up to 1000 MHz. The high gain and broadband performance of
these devices make them ideal for large - signal, common - source amplifier
applications in 28 volt base station equipment.
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PAR = 7.5 dB @ 0.01% Probability on CCDF.
Power Gain — 21 dB
Drain Efficiency — 32.3%
Device Output Signal PAR — 6.4 dB @ 0.01% Probability on CCDF
ACPR @ 5 MHz Offset — - 39.5 dBc in 3.84 MHz Channel Bandwidth
•
Capable of
(3 dB Input
Handling 10:1 VSWR,
Overdrive from Rated
@ 32
Pout),
Vdc, 940
Designed
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Features
• 100% PAR Tested for Guaranteed Output Power Capability
• Characterized with Series Equivalent Large - Signal Impedance Parameters
• Internally Matched for Ease of Use
• Qualified Up to a Maximum of 32 VDD Operation
• Integrated ESD Protection
• Optimized for Doherty Applications
• RoHS Compliant
• In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
Document Number: MRFE6S9135H
Rev. 1, 11/2007
MRFE6S9135HR3
MRFE6S9135HSR3
940 MHz, 39 W AVG., 28 V
SINGLE W - CDMA
LATERAL N - CHANNEL
RF POWER MOSFETs
CASE 465B - 03, STYLE 1
NI - 880
MRFE6S9135HR3
CASE 465C - 02, STYLE 1
NI - 880S
MRFE6S9135HSR3
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain- Source Voltage
Gate- Source Voltage
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature (1,2)
Table 2. Thermal Characteristics
VDSS
VGS
Tstg
TC
TJ
- 0.5, +66
- 0.5, +12
- 65 to +150
150
225
Vdc
Vdc
°C
°C
°C
Characteristic
Symbol
Value (2,3)
Unit
Thermal Resistance, Junction to Case
Case Temperature 80°C, 136 W CW
Case Temperature 80°C, 39 W CW
RθJC
0.39
0.48
°C/W
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
© Freescale Semiconductor, Inc., 2007. All rights reserved.
RF Device Data
Freescale Semiconductor
MRFE6S9135HR3 MRFE6S9135HSR3
1
1 page  
www.DataSheet4U.com
B1
R2
C4
R3
C5
C6
C3 R1
C1
C2
C24
C20 C21 C22
C8
C11 C12
C9 C10
C7
C13
C23
C14
C18
C25
C15
C16 C17
MRFE6S9135H
Rev. 1
Figure 2. MRFE6S9135HHR3(HSR3) Test Circuit Component Layout
C19
RF Device Data
Freescale Semiconductor
MRFE6S9135HR3 MRFE6S9135HSR3
5
5 Page 
PRODUCT DOCUMENTATION
www.DataSheet4U.com
Refer to the following documents to aid your design process.
Application Notes
• AN1955: Thermal Measurement Methodology of RF Power Amplifiers
Engineering Bulletins
• EB212: Using Data Sheet Impedances for RF LDMOS Devices
REVISION HISTORY
The following table summarizes revisions to this document.
Revision
0
1
Date
Nov. 2007
Nov. 2007
Description
• Initial Release of Data Sheet
• Updated Fig. 12, MTTF versus Junction Temperature, to reflect a 32.3% typical efficiency rating, p. 8
RF Device Data
Freescale Semiconductor
MRFE6S9135HR3 MRFE6S9135HSR3
11
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| PDF Descargar | [ Datasheet MRFE6S9135HR3.PDF ] | |
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