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부품번호 MRFE6S9135HSR3 기능
기능 N-Channel Enhancement-Mode Lateral MOSFETs
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MRFE6S9135HSR3 데이터시트, 핀배열, 회로
Freescale Semiconductor
Technical Data
www.DataSheet4U.com
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
Designed for broadband commercial and industrial applications with
frequencies up to 1000 MHz. The high gain and broadband performance of
these devices make them ideal for large - signal, common - source amplifier
applications in 28 volt base station equipment.
T16y04p0Di0cPamCl ASH,inwPgoilteuht-5=C0a3%r9riCWerliapWtptsin-ACgv,DgCM.,hAFaunPlnleeFrlfroBerqamunaednnwcciedy:tBhVa=DnD3d.,=8342G8MPVHPozlTt,seI,nsIptDuMQtoS=diegln1a,l
PAR = 7.5 dB @ 0.01% Probability on CCDF.
Power Gain — 21 dB
Drain Efficiency — 32.3%
Device Output Signal PAR — 6.4 dB @ 0.01% Probability on CCDF
ACPR @ 5 MHz Offset — - 39.5 dBc in 3.84 MHz Channel Bandwidth
Capable of
(3 dB Input
Handling 10:1 VSWR,
Overdrive from Rated
@ 32
Pout),
Vdc, 940
Designed
MfoHr zE,nPhoaunt c=e1d8R0uWggCedWness
Features
100% PAR Tested for Guaranteed Output Power Capability
Characterized with Series Equivalent Large - Signal Impedance Parameters
Internally Matched for Ease of Use
Qualified Up to a Maximum of 32 VDD Operation
Integrated ESD Protection
Optimized for Doherty Applications
RoHS Compliant
In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
Document Number: MRFE6S9135H
Rev. 1, 11/2007
MRFE6S9135HR3
MRFE6S9135HSR3
940 MHz, 39 W AVG., 28 V
SINGLE W - CDMA
LATERAL N - CHANNEL
RF POWER MOSFETs
CASE 465B - 03, STYLE 1
NI - 880
MRFE6S9135HR3
CASE 465C - 02, STYLE 1
NI - 880S
MRFE6S9135HSR3
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain- Source Voltage
Gate- Source Voltage
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature (1,2)
Table 2. Thermal Characteristics
VDSS
VGS
Tstg
TC
TJ
- 0.5, +66
- 0.5, +12
- 65 to +150
150
225
Vdc
Vdc
°C
°C
°C
Characteristic
Symbol
Value (2,3)
Unit
Thermal Resistance, Junction to Case
Case Temperature 80°C, 136 W CW
Case Temperature 80°C, 39 W CW
RθJC
0.39
0.48
°C/W
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
© Freescale Semiconductor, Inc., 2007. All rights reserved.
RF Device Data
Freescale Semiconductor
MRFE6S9135HR3 MRFE6S9135HSR3
1




MRFE6S9135HSR3 pdf, 반도체, 판매, 대치품
www.DataSheet4U.com
VBIAS
R2
B1
+
C4
R3
C5
C6
Z7
R1
RF
INPUT Z1
Z2 Z3
Z4 Z5
Z6
Z9
C1
C2 C3
DUT
Z8
VSUPPLY
+
C20 C21 C22 C23 C24
C8 C11 C12
RF
OUTPUT
Z10 Z11 Z12 Z13 Z14 Z15 Z16 Z17
C7 C9 C10
C25
C13 C14
+ VSUPPLY
C15 C16 C17 C18 C19
Z1
Z2
Z3
Z4
Z5
Z6
Z7, Z8
Z9
Z10
0.263x 0.065Microstrip
0.310x 0.065Microstrip
0.910x 0.120Microstrip
0.248x 1.020x 0.120Taper
0.363x 1.020Microstrip
0.057x 1.120Microstrip
0.823x 0.120Microstrip
0.060x 0.980Microstrip
0.149x 0.980Microstrip
Z11
Z12
Z13
Z14
Z15
Z16
Z17
PCB
0.202x 0.980x 0.444Taper
0.114x 0.444Microstrip
0.145x 0.444x 0.110Taper
0.180x 0.110Microstrip
0.585x 0.110Microstrip
0.443x 0.065Microstrip
0.274x 0.065Microstrip
Taconic RF - 35, 0.030, εr = 3.5
Figure 1. MRFE6S9135HR3(HSR3) Test Circuit Schematic
Table 5. MRFE6S9135HR3(HSR3) Test Circuit Component Designations and Values
Part
Description
Part Number
B1 Short RF Bead
2743019447
C1, C6, C15, C20, C25
39 pF Chip Capacitors
ATC100B390JT500XT
C2, C14
0.8- 8.0 pF Variable Capacitors, Gigatrim
27291SL
C3
2.0 pF Chip Capacitor
ATC100B2R0JT500XT
C4
33 μF, 25 V Electrolytic Capacitor
EMVY250ADA330MF55G
C5, C16, C17, C18, C21,
C22, C23
10 μF, 50 V Chip Capacitors
GRM55DR61H106KA88B
C7, C8
6.8 pF Chip Capacitors
ATC100B6R8JT500XT
C9, C10, C11, C12, C13
4.7 pF Chip Capacitors
ATC100B4R7JT500XT
C19, C24
470 μF, 63 V Electrolytic Capacitors
EKME630ELL471MK25S
R1, R3
3.3 Ω, 1/3 W Chip Resistors
CRCW12103R30FKEA
R2
2.2 KΩ, 1/4 W Chip Resistor
CRCW12062201FKEA
Manufacturer
Fair- Rite
ATC
Johanson
ATC
Nippon Chemi - Con
Murata
ATC
ATC
United Chemi - Con
Vishay
Vishay
MRFE6S9135HR3 MRFE6S9135HSR3
4
RF Device Data
Freescale Semiconductor

4페이지










MRFE6S9135HSR3 전자부품, 판매, 대치품
www.DataSheet4U.com
−10
VDD = 28 Vdc, IDQ = 1000 mA, f1 = 935 MHz
−20 f2 = 945 MHz, Two−Tone Measurements
−30
TYPICAL CHARACTERISTICS
0
VDD = 28 Vdc, Pout = 160 W (PEP)
−10 IDQ = 1000 mA, Two−Tone Measurements
(f1 + f2)/2 = Center Frequency of 940 MHz
−20
−40 3rd Order
5th Order
−50
IM3−U
−30
IM3−L
IM5−U
−40 IM5−L
−60 7th Order
−70
1
10 100 400
Pout, OUTPUT POWER (WATTS) PEP
Figure 7. Intermodulation Distortion Products
versus Output Power
−50 IM7−U
IM7−L
−60
1
10
100
TWO−TONE SPACING (MHz)
Figure 8. Intermodulation Distortion Products
versus Tone Spacing
1
Single−Carrier W−CDMA, 3.84 MHz Channel Bandwidth
0
55
Ideal 50
−1 45
−2 −1 dB = 38.71 W
−2 dB = 54.21 W
40
−3 35
−3 dB = 85.92 W
Actual
−4 30
VDD = 28 Vdc, IDQ = 1000 mA, f = 940 MHz
Input Signal PAR = 7.5 dB @ 0.01% Probability (CCDF)
−5 25
20 30 40 50 60 70 80 90 100
Pout, OUTPUT POWER (WATTS)
Figure 9. Output Peak - to - Average Ratio
Compression (PARC) versus Output Power
23
Gps
22
21
TC = −30_C
25_C
70
−30_C
25_C 60
85_C 50
20 85_C
40
19 30
18 20
17 ηD
16
1
VDD = 28 Vdc
IDQ = 1000 mA
f = 940 MHz
10
0
10 100 300
Pout, OUTPUT POWER (WATTS) CW
Figure 10. Power Gain and Drain Efficiency
versus CW Output Power
22
IDQ = 1000 mA
f = 940 MHz
21
20
19
18
28 V
VDD = 24 V
17 32 V
0 20 40 60 80 100 120 140 160 180 200 220 240
Pout, OUTPUT POWER (WATTS) CW
Figure 11. Power Gain versus Output Power
RF Device Data
Freescale Semiconductor
MRFE6S9135HR3 MRFE6S9135HSR3
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N-Channel Enhancement-Mode Lateral MOSFETs

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