PDF MRFE6S9201HSR3 Data sheet ( Hoja de datos )

Número de pieza	MRFE6S9201HSR3
Descripción	RF Power Field Effect Transistors
Fabricantes	Motorola Semiconductor Products
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No Preview Available ! Freescale Semiconductor Technical Data www.DataSheet4U.com RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of these devices make them ideal for large - signal, common - source amplifier applications in 28 volt base station equipment. • PT14yap0gi0icnamgl,AST,irnPagfofleuict-=CCoa4dr0reiWesra8NttTs-hCArDovuMgg.A,hfP1=e38r)f.8oC0rmhMaaHnnnzc,eeIl:SBV-aD9nD5d=wC2iDd8MthVA=o(l1tPs.i,2loI2Dt8,Q8S=yMnHc,z, PAR = 9.8 dB @ 0.01% Probability on CCDF. Power Gain — 20.8 dB Drain Efficiency — 31.3% Device Output Signal PAR — 8.1 dB @ 0.01% Probability on CCDF ACPR @ 750 kHz Offset — - 46.5 dBc in 30 kHz Channel Bandwidth • Capable of Handling 10:1 VSWR, @ 32 Vdc, 880 MHz, Pout = 270 W CW (2 dB Input Overdrive from Rated Pout), Designed for Enhanced Ruggedness Features • 100% PAR Tested for Guaranteed Output Power Capability • Characterized with Series Equivalent Large - Signal Impedance Parameters • Internally Matched for Ease of Use • Greater Negative Gate - Source Voltage Range for Improved Class C Operation • Qualified Up to a Maximum of 32 VDD Operation • Integrated ESD Protection • RoHS Compliant • In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel. Document Number: MRFE6S9201H Rev. 1, 12/2008 MRFE6S9201HR3 MRFE6S9201HSR3 880 MHz, 40 W AVG., 28 V SINGLE N - CDMA LATERAL N - CHANNEL RF POWER MOSFETs CASE 465 - 06, STYLE 1 NI - 780 MRFE6S9201HR3 CASE 465A - 06, STYLE 1 NI - 780S MRFE6S9201HSR3 Table 1. Maximum Ratings Rating Symbol Value Unit Drain - Source Voltage Gate - Source Voltage Storage Temperature Range Case Operating Temperature Operating Junction Temperature (1,2) Table 2. Thermal Characteristics VDSS VGS Tstg TC TJ - 0.5, +66 - 6.0, +10 - 65 to +150 150 225 Vdc Vdc °C °C °C Characteristic Symbol Value (2,3) Unit Thermal Resistance, Junction to Case Case Temperature 85°C, 197 W CW Case Temperature 75°C, 40 W CW RθJC 0.34 0.33 °C/W 1. Continuous use at maximum temperature will affect MTTF. 2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. 3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1955. © Freescale Semiconductor, Inc., 2007-2008. All rights reserved. RF Device Data Freescale Semiconductor MRFE6S9201HR3 MRFE6S9201HSR3 1 1 page Table 5. MRFE6S9201HR3(HSR3) Test Circuit Component Designations and Values www.DataSheet4U.com Part B1, B2 Description Short RF Beads Part Number 2743019447ROP50 C1, C4, C5, C20, C39, C44 33 pF Chip Capacitors ATC100B330JT500XT C2, C3 10 μF, 50 V Tantalum Capacitors T491C106K050AT C6, C32, C38, C43 0.6 - 4.5 pF Variable Capacitors, Gigatrim 27271SL C7, C12, C13, C14, C15, C16, C17, C25 3.3 pF Chip Capacitors ATC600F3R3BT250XT C8, C9 4.7 pF Chip Capacitors ATC600F4R7BT250XT C10, C11 15 pF Chip Capacitors ATC100B6R8JT500XT C18, C19, C21, C22, C23, C24 1.0 pF Chip Capacitors ATC600F1R0BT250XT C26, C45 470 μF, 63 V Electrolytic Capacitors EKMG630ELL331MJ20S C27, C34 1.2K pF Chip Capacitors ATC100B1R2BT500XT C28, C35 20K pF Chip Capacitors ATC200B203MT50XT C29, C31, C37, C46 10 μF, 50 V Chip Capacitors GRM55DR61H106KA88B C30, C36 0.047 pF, 50 V Chip Capacitors C1825C473J5RAC C33, C42 22 μF, 50 V Tantalum Capacitors T491C226K050AT C40, C41 5.6 pF Chip Capacitors ATC600F5R6BT250XT R1, R2 12 Ω, 1/4 W Chip Resistors CRCW120612R0FKEA R3, R4 1 KΩ, 1/4 W Chip Resistors CRCW12061001FKEA Manufacturer Fair - Rite ATC Kemet Johanson ATC ATC ATC ATC United Chemi - Con ATC ATC Murata Kemet Kemet ATC Vishay Vishay R4 B1 C2 C4 R1 C1 C8 C7 C6 C5 C43 C9 R2 C3 R3 B2 C27 C28 C30 C26 C10 C42 C40 C16 C18 C20 C29 C31 C12 C13 C21 C14 C23 C15 C22 C25 C24 C32 C39 C38 C41 C17 C19 C11 C44 MRFE6S9201H/HS Rev. 0 C45 C46 C33 C34 C35 C36 C37 Figure 2. MRFE6S9201HR3(HSR3) Test Circuit Component Layout RF Device Data Freescale Semiconductor MRFE6S9201HR3 MRFE6S9201HSR3 5 5 Page www.DataSheet4U.com B B (FLANGE) H E A PACKAGE DIMENSIONS G 1 2X Q bbb M T A M B M 2 D bbb M T A M A (FLANGE) 3 K NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M−1994. 2. CONTROLLING DIMENSION: INCH. 3. DELETED 4. DIMENSION H IS MEASURED 0.030 (0.762) AWAY FROM PACKAGE BODY. BM M (INSULATOR) bbb M T A M B M N (LID) ccc M T A M B M C T SEATING PLANE R (LID) ccc M T A M B M S (INSULATOR) aaa M T A M B M F CASE 465 - 06 ISSUE G NI - 780 MRFE6S9201HR3 INCHES DIM MIN MAX A 1.335 1.345 B 0.380 0.390 C 0.125 0.170 D 0.495 0.505 E 0.035 0.045 F 0.003 0.006 G 1.100 BSC H 0.057 0.067 K 0.170 0.210 M 0.774 0.786 N 0.772 0.788 Q .118 .138 R 0.365 0.375 S 0.365 0.375 aaa 0.005 REF bbb 0.010 REF ccc 0.015 REF STYLE 1: PIN 1. DRAIN 2. GATE 3. SOURCE MILLIMETERS MIN MAX 33.91 34.16 9.65 9.91 3.18 4.32 12.57 12.83 0.89 1.14 0.08 0.15 27.94 BSC 1.45 1.70 4.32 5.33 19.66 19.96 19.60 20.00 3.00 3.51 9.27 9.53 9.27 9.52 0.127 REF 0.254 REF 0.381 REF 4X U (FLANGE) B 4X Z (LID) 1 B (FLANGE) H E A 2 D bbb M T A M A (FLANGE) 2X K BM N (LID) ccc M T A M M (INSULATOR) bbb M T A M C 3 T SEATING PLANE NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M−1994. 2. CONTROLLING DIMENSION: INCH. 3. DELETED 4. DIMENSION H IS MEASURED 0.030 (0.762) AWAY FROM PACKAGE BODY. R (LID) B M ccc M T A M B M S (INSULATOR) B M aaa M T A M B M F CASE 465A - 06 ISSUE H NI - 780S MRFE6S9201HSR3 INCHES DIM MIN MAX A 0.805 0.815 B 0.380 0.390 C 0.125 0.170 D 0.495 0.505 E 0.035 0.045 F 0.003 0.006 H 0.057 0.067 K 0.170 0.210 M 0.774 0.786 N 0.772 0.788 R 0.365 0.375 S 0.365 0.375 U −−− 0.040 Z −−− 0.030 aaa 0.005 REF bbb 0.010 REF ccc 0.015 REF STYLE 1: PIN 1. DRAIN 2. GATE 5. SOURCE MILLIMETERS MIN MAX 20.45 20.70 9.65 9.91 3.18 4.32 12.57 12.83 0.89 1.14 0.08 0.15 1.45 1.70 4.32 5.33 19.61 20.02 19.61 20.02 9.27 9.53 9.27 9.52 −−− 1.02 −−− 0.76 0.127 REF 0.254 REF 0.381 REF RF Device Data Freescale Semiconductor MRFE6S9201HR3 MRFE6S9201HSR3 11 11 Page

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