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PDF MRFE6S9200HR3 Data sheet ( Hoja de datos )
| Número de pieza | MRFE6S9200HR3 | |
| Descripción | RF Power Field Effect Transistors | |
| Fabricantes | Motorola Semiconductor Products | |
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Freescale Semiconductor
Technical Data
www.DataSheet4U.com
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
Designed for broadband commercial and industrial applications with
frequencies up to 1000 MHz. The high gain and broadband performance of
these devices make them ideal for large - signal, common - source amplifier
applications in 28 volt base station equipment.
• 6T144yp0Di0cPamCl ASH,inwPgoilteuht-4=C5a5.2r8r%iWerCaWtltips-pCAinDvggM,.,ACfh=Pae8nr8nfo0erlmMBaHannzc,de3w:GiVdPtDhPD=T=e32s.88t 4MVMooldHtsez,l,I1DI,nQp=ut
Signal PAR = 7.5 dB @ 0.01% Probability on CCDF.
Power Gain — 21 dB
Drain Efficiency — 35%
Device Output Signal PAR — 6.36 dB @ 0.01% Probability on CCDF
ACPR @ 5 MHz Offset — - 40 dBc in 3.84 MHz Channel Bandwidth
• Capable of Handling 10:1 VSWR, @ 32 Vdc, 880 MHz, Pout = 300 W CW
(3 dB Input Overdrive
Ruggedness.
from
Rated
Pout),
Designed
for
Enhanced
Features
• 100% PAR Tested for Guaranteed Output Power Capability
• Characterized with Series Equivalent Large - Signal Impedance Parameters
• Internally Matched for Ease of Use
• Qualified Up to a Maximum of 32 VDD Operation
• Integrated ESD Protection
• RoHS Compliant
• In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
Document Number: MRFE6S9200H
Rev. 1, 12/2008
MRFE6S9200HR3
MRFE6S9200HSR3
880 MHz, 58 W AVG., 28 V
SINGLE W - CDMA
LATERAL N - CHANNEL
RF POWER MOSFETs
CASE 465B - 03, STYLE 1
NI - 880
MRFE6S9200HR3
CASE 465C - 02, STYLE 1
NI - 880S
MRFE6S9200HSR3
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain - Source Voltage
Gate - Source Voltage
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature (1,2)
Table 2. Thermal Characteristics
VDSS
VGS
Tstg
TC
TJ
- 0.5, +66
- 0.5, +12
- 65 to +150
150
225
Vdc
Vdc
°C
°C
°C
Characteristic
Symbol
Value (2,3)
Unit
Thermal Resistance, Junction to Case
Case Temperature 80°C, 200 W CW
Case Temperature 79°C, 58 W CW
RθJC
0.29
0.33
°C/W
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access
MTTF calculators by product.
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
© Freescale Semiconductor, Inc., 2007-2008. All rights reserved.
RF Device Data
Freescale Semiconductor
MRFE6S9200HR3 MRFE6S9200HSR3
1
1 page  
www.DataSheet4U.com
TYPICAL CHARACTERISTICS
23 38
22
ηD
21
34
Gps
30
20
VDD = 28 Vdc, Pout = 58 W (Avg.)
26
19
IDQ = 1400 mA, Single−Carrier W−CDMA
3.84 MHz Channel Bandwidth
−0.3
PAR = 7.5 dB @ 0.01% Probability (CCDF)
18 −0.6
17 −0.9
16 IRL
15
PARC
−1.2
−1.5
800 820 840 860 880 900 920 940 960
f, FREQUENCY (MHz)
Figure 3. Single - Carrier W - CDMA Broadband Performance
@ Pout = 58 Watts Avg.
0
−4
−9
−12
−16
22 51
21 45
ηD
20
39
VDD = 28 Vdc, Pout = 99 W (Avg.)
19
Gps
IDQ = 1400 mA, Single−Carrier W−CDMA
33
3.84 MHz Channel Bandwidth
18 PAR = 7.5 dB @ 0.01% Probability (CCDF) −2.2
17 −2.4
16
IRL
15
PARC
−2.6
−2.8
14 −3
800 820 840 860 880 900 920 940 960
f, FREQUENCY (MHz)
Figure 4. Single - Carrier W - CDMA Broadband Performance
@ Pout = 99 Watts Avg.
−3
−6
−9
−12
−15
23
22 IDQ = 2100 mA
21 1750 mA
20 1400 mA
0
VDD = 28 Vdc
−10 f1 = 875 MHz, f2 = 885 MHz
Two−Tone Measurements
−20
1050 mA
−30
1400 mA
IDQ = 700 mA
19 1050 mA
18 700 mA
VDD = 28 Vdc
f1 = 875 MHz, f2 = 885 MHz
Two−Tone Measurements
17
1 10 100 600
Pout, OUTPUT POWER (WATTS) PEP
Figure 5. Two - Tone Power Gain versus
Output Power
−40
1750 mA
2100 mA
−50
−60
1
10 100 600
Pout, OUTPUT POWER (WATTS) PEP
Figure 6. Third Order Intermodulation Distortion
versus Output Power
RF Device Data
Freescale Semiconductor
MRFE6S9200HR3 MRFE6S9200HSR3
5
5 Page 
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© Freescale Semiconductor, Inc. 2007-2008. All rights reserved.
RDFocDumevenict eNuDmabetar: MRFE6S9200H
FRreeve. s1,c1a2l/e200S8emiconductor
MRFE6S9200HR3 MRFE6S9200HSR3
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