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부품번호 | MRFE6S9200HSR3 기능 |
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기능 | RF Power Field Effect Transistors | ||
제조업체 | Motorola Semiconductor Products | ||
로고 | |||
전체 11 페이지수
Freescale Semiconductor
Technical Data
www.DataSheet4U.com
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
Designed for broadband commercial and industrial applications with
frequencies up to 1000 MHz. The high gain and broadband performance of
these devices make them ideal for large - signal, common - source amplifier
applications in 28 volt base station equipment.
• 6T144yp0Di0cPamCl ASH,inwPgoilteuht-4=C5a5.2r8r%iWerCaWtltips-pCAinDvggM,.,ACfh=Pae8nr8nfo0erlmMBaHannzc,de3w:GiVdPtDhPD=T=e32s.88t 4MVMooldHtsez,l,I1DI,nQp=ut
Signal PAR = 7.5 dB @ 0.01% Probability on CCDF.
Power Gain — 21 dB
Drain Efficiency — 35%
Device Output Signal PAR — 6.36 dB @ 0.01% Probability on CCDF
ACPR @ 5 MHz Offset — - 40 dBc in 3.84 MHz Channel Bandwidth
• Capable of Handling 10:1 VSWR, @ 32 Vdc, 880 MHz, Pout = 300 W CW
(3 dB Input Overdrive
Ruggedness.
from
Rated
Pout),
Designed
for
Enhanced
Features
• 100% PAR Tested for Guaranteed Output Power Capability
• Characterized with Series Equivalent Large - Signal Impedance Parameters
• Internally Matched for Ease of Use
• Qualified Up to a Maximum of 32 VDD Operation
• Integrated ESD Protection
• RoHS Compliant
• In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
Document Number: MRFE6S9200H
Rev. 1, 12/2008
MRFE6S9200HR3
MRFE6S9200HSR3
880 MHz, 58 W AVG., 28 V
SINGLE W - CDMA
LATERAL N - CHANNEL
RF POWER MOSFETs
CASE 465B - 03, STYLE 1
NI - 880
MRFE6S9200HR3
CASE 465C - 02, STYLE 1
NI - 880S
MRFE6S9200HSR3
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain - Source Voltage
Gate - Source Voltage
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature (1,2)
Table 2. Thermal Characteristics
VDSS
VGS
Tstg
TC
TJ
- 0.5, +66
- 0.5, +12
- 65 to +150
150
225
Vdc
Vdc
°C
°C
°C
Characteristic
Symbol
Value (2,3)
Unit
Thermal Resistance, Junction to Case
Case Temperature 80°C, 200 W CW
Case Temperature 79°C, 58 W CW
RθJC
0.29
0.33
°C/W
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access
MTTF calculators by product.
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
© Freescale Semiconductor, Inc., 2007-2008. All rights reserved.
RF Device Data
Freescale Semiconductor
MRFE6S9200HR3 MRFE6S9200HSR3
1
www.DataSheet4U.com
C26
B1
R3
C30
C2
900 MHz
NI−880
Rev. 3
C4
C22
C23 C28
R2
C9
C8
C1 C20 C7
R1
C32
C11
C12 C14 C16 C18
C13
C15 C17 C19
C10
C33
C34
C21
B2 C31
C27
C3
C24 C29
C25
C5
Figure 2. MRFE6S9200HR3(SR3) Test Circuit Component Layout
C6
MRFE6S9200HR3 MRFE6S9200HSR3
4
RF Device Data
Freescale Semiconductor
4페이지 www.DataSheet4U.com
22
21
TYPICAL CHARACTERISTICS
IDQ = 1400 mA
f = 880 MHz
109
108
20
107
19
18 28 V
VDD = 24 V
32 V
17
0 100 200 300 400
Pout, OUTPUT POWER (WATTS) CW
Figure 12. Power Gain versus Output Power
106
105
90
110 130 150 170 190 210 230 250
TJ, JUNCTION TEMPERATURE (°C)
This above graph displays calculated MTTF in hours when the device
is operated at VDD = 28 Vdc, Pout = 58 W Avg., and ηD = 35%.
MTTF calculator available at http://www.freescale.com/rf. Select
Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
Figure 13. MTTF versus Junction Temperature
W - CDMA TEST SIGNAL
100
10
1
Input Signal
0.1
0.01
0.001
0.0001
W−CDMA. ACPR Measured in 3.84 MHz
Channel Bandwidth @ "5 MHz Offset.
PAR = 7.5 dB @ 0.01% Probability on
CCDF
0 2 4 6 8 10
PEAK−TO−AVERAGE (dB)
Figure 14. CCDF W - CDMA 3GPP, Test Model 1,
64 DPCH, 50% Clipping, Single - Carrier Test Signal
−10
3.84 MHz
−20 Channel BW
−30
−40
−50
−60
−70
−80
−90 −ACPR in 3.84 MHz
Integrated BW
−100
−ACPR in 3.84 MHz
Integrated BW
−110
−9 −7.2 −5.4 −3.6 −1.8 0 1.8 3.6 5.4 7.2 9
f, FREQUENCY (MHz)
Figure 15. Single - Carrier W - CDMA Spectrum
RF Device Data
Freescale Semiconductor
MRFE6S9200HR3 MRFE6S9200HSR3
7
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