|
|
PDF BLS6G2933S-130 Data sheet ( Hoja de datos )
| Número de pieza | BLS6G2933S-130 | |
| Descripción | LDMOS S-band radar power transistor | |
| Fabricantes | NXP Semiconductors | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de BLS6G2933S-130 (archivo pdf) en la parte inferior de esta página. Total 11 Páginas | ||
|
No Preview Available !
www.DataSheet4U.com
BLS6G2933S-130
LDMOS S-band radar power transistor
Rev. 01 — 11 December 2008
Objective data sheet
1. Product profile
1.1 General description
130 W LDMOS power transistor intended for radar applications in the 2.9 GHz to 3.3 GHz
range.
Table 1. Typical performance
Typical RF performance at Tcase = 25 °C; tp = 300 µs; δ = 10 %; IDq = 100 mA; in a class-AB
production test circuit.
Mode of operation
f
(GHz)
VDS PL
(V) (W)
Gp ηD
(dB) (%)
tr
(ns)
tf
(ns)
pulsed RF
2.9 to 3.3 32 130
12.5 47
20
6
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
1.2 Features
I Typical pulsed RF performance at a frequency of 2.9 GHz to 3.3 GHz, a supply voltage
of 32 V, an IDq of 100 mA, a tp of 300 µs with δ of 10 %:
N Output power = 130 W
N Power gain = 12.5 dB
N Efficiency = 47 %
I Easy power control
I Integrated ESD protection
I High flexibility with respect to pulse formats
I Excellent ruggedness
I High efficiency
I Excellent thermal stability
I Designed for broadband operation (2.9 GHz to 3.3 GHz)
I Internally matched for ease of use
I Compliant to Directive 2002/95/EC, regarding restriction of hazardous substances
(RoHS)
1 page  
www.DNatXaSPheSete4Um.coicmonductors
14
Gp
(dB)
10
7.2 Graphs
(2)
(3)
(1)
001aaj266
BLS6G2933S-130
LDMOS S-band radar power transistor
14
Gp
(dB)
10
001aaj267
(2)
(3)
(1)
66
2
0 60 120 180
PL (W)
VDS = 32 V; IDq = 100 mA; tp = 300 µs; δ = 10 %.
(1) f = 2.9 GHz
(2) f = 3.1 GHz
(3) f = 3.3 GHz
Fig 2. Power gain as a function of load power; typical
values
2
0 60 120 180
PL (W)
VDS = 32 V; IDq = 100 mA; tp = 100 µs; δ = 20 %.
(1) f = 2.9 GHz
(2) f = 3.1 GHz
(3) f = 3.3 GHz
Fig 3. Power gain as a function of load power; typical
values
60
ηD
(%)
40
001aaj268
(1)
(2)
(3)
60
ηD
(%)
40
001aaj269
(1)
(2)
(3)
20 20
0
0 60 120 180
PL (W)
VDS = 32 V; IDq = 100 mA; tp = 300 µs; δ = 10 %.
(1) f = 2.9 GHz
(2) f = 3.1 GHz
(3) f = 3.3 GHz
Fig 4. Drain efficiency as a function of load power;
typical values
0
0 60 120 180
PL (W)
VDS = 32 V; IDq = 100 mA; tp = 100 µs; δ = 20 %.
(1) f = 2.9 GHz
(2) f = 3.1 GHz
(3) f = 3.3 GHz
Fig 5. Drain efficiency as a function of load power;
typical values
BLS6G2933S-130_1
Objective data sheet
Rev. 01 — 11 December 2008
© NXP B.V. 2008. All rights reserved.
5 of 11
5 Page 
www.DNatXaSPheSete4Um.coicmonductors
14. Contents
1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.1 General description. . . . . . . . . . . . . . . . . . . . . . 1
1.2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
2 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2
3 Ordering information . . . . . . . . . . . . . . . . . . . . . 2
4 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2
5 Thermal characteristics. . . . . . . . . . . . . . . . . . . 2
6 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 3
7 Application information. . . . . . . . . . . . . . . . . . . 3
7.1 Ruggedness in class-AB operation. . . . . . . . . . 4
7.2 Graphs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
8 Test information . . . . . . . . . . . . . . . . . . . . . . . . . 7
9 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 8
10 Abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
11 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . 9
12 Legal information. . . . . . . . . . . . . . . . . . . . . . . 10
12.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 10
12.2 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
12.3 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
12.4 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
13 Contact information. . . . . . . . . . . . . . . . . . . . . 10
14 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
BLS6G2933S-130
LDMOS S-band radar power transistor
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2008.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
Date of release: 11 December 2008
Document identifier: BLS6G2933S-130_1
11 Page | ||
| Páginas | Total 11 Páginas | |
| PDF Descargar | [ Datasheet BLS6G2933S-130.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| BLS6G2933S-130 | LDMOS S-band radar power transistor | NXP Semiconductors |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |