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DB-499D-470 PDF 데이터시트 : 부품 기능 및 핀배열

부품번호 DB-499D-470
기능 RF power amplifier using 1 x START499D NPN RF silicon transistor
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DB-499D-470 데이터시트, 핀배열, 회로
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DB-499D-470
RF power amplifier using 1 x START499D
NPN RF silicon transistor
Preliminary Data
Features
Excellent thermal stability
Frequency: 430 - 470 MHz
Supply voltage: 3.6 V
Output power: 29 dBm
Power gain: 19 dB
Efficiency: 52 %
BeO free amplifier
Description
The DB-499D-470 is a NPN silicon RF power
amplifier designed for UHF 2-way radio
applications
Mechanical specification:
L = 60 mm, W = 30 mm
".W
Table 1.
Device summary
Order codes
DB-499D-470
February 2009
Rev 1
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to
change without notice.
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DB-499D-470 pdf, 반도체, 판매, 대치품
www.DataSThyepeti4cUa.cl opmerformance
3 Typical performance
DB-499D-470
3.1 VCC = 3.6, ICQ = 400 mA
Figure 1. Gain vs output power
Figure 2. Efficiency vs Pout






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0OUTD"M
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Figure 3. Harmonics


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DB-499D-470 전자부품, 판매, 대치품
www.DataSDhBee-t449U9.cDom-470
Package mechanical data
5.1 Thermal pad and via design
Thermal vias are required in the PCB layout to effectively conduct heat away from the
package. The via pattern has been designed to address thermal, power dissipation and
electrical requirements of the device.
The via pattern is based on thru-hole vias with 0.203 mm to 0.330 mm finished hole size on
a 0.5 mm to 1.2 mm grid pattern with 0.025 plating on via walls. If micro vias are used in a
design, it is suggested that the quantity of vias be increased by a 4:1 ratio to achieve similar
results.
Figure 5. Pad layout details
SOT-89
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DB-499D-470

RF power amplifier using 1 x START499D NPN RF silicon transistor

ST Microelectronics
ST Microelectronics

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