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Datasheet K3662 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | K3662 | N-Channel MOSFET, 2SK3662 2SK3662
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSII)
2SK3662
Switching Regulator, DC−DC Converter, Motor Drive Applications
• • • • Low drain-source ON resistance: RDS (ON) = 9.4 mΩ (typ.) High forward transfer admittance: |Yfs| = 55 S (typ. |  Toshiba Semiconductor | data |
K36 Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | K360 | LOW LEVEL ZENER DIODES VERY LOW VOLTAGE/ LOW LEAKAGE LOW LEVEL ZENER DIODES VERY LOW VOLTAGE, LOW LEAKAGE K120 - K510
• Conserves battery life • Unique manufacturing process • Provides lowest reverse leakage currents • Low impedance at currents specified at 10 mA and below
NOMINAL ZENER VOLTAGE Vz @ Iz = 10 mA (Vdc) 1.2 1.5 1.8 2.1 2.4 2.7 3.0  Knox Inc diode | | |
| 2 | K3601GL | Standard Bidirectional SIDAC Teccor® brand Thyristors
Standard Bidirectional SIDACs
Kxxx1GL Series
RoHS
Schematic Symbol
Applications Typical application circuit presented in Figure 10 of this data sheet (Typical Metal Halide Ignitor Circuit).
Description
The Multipulse™ SIDAC is a voltage switch used in MetalHalide lam  Littelfuse data | | |
| 3 | K3603-01MR | N-Channel MOSFET, 2SK3603-01MR 2SK3603-01MR
FUJI POWER MOSFET
200304
Super FAP-G Series
Features
High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof
N-CHANNEL SILICON POWER MOSFET
Outline Drawings (mm)
TO-220F
Applications
Switching regulators UPS (Uninterruptible Power Supply) DC-DC  Fuji Electric data | | |
| 4 | K3607-01MR | N-Channel MOSFET, 2SK3607-01MR 2SK3607-01MR
FUJI POWER MOSFET
Super FAP-G Series
Features
High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof
N-CHANNEL SILICON POWER MOSFET
Outline Drawings (mm)
TO-220F
Applications
Switching regulators UPS (Uninterruptible Power Supply) DC-DC convert  Fuji data | | |
| 5 | K3610 | Photocoupler(These Photocouplers consist of a Gallium Arsenide Infrared Emitting) Photocoupler
K3610 • K3611
These Photocouplers consist of a Gallium Arsenide Infrared Emitting Diode and a Silicon NPN Phototransistor in a 6-pin package.
DIMENSION
(Unit : mm)
FEATURES
• TTL Compatible Output • Collector-Emitter Voltage : Min.70V • Current Transfer Ratio : Typ.50% (at I  KODENSHI KOREA CORP data | | |
| 6 | K3611 | Photocoupler(These Photocouplers consist of a Gallium Arsenide Infrared Emitting) Photocoupler
K3610 • K3611
These Photocouplers consist of a Gallium Arsenide Infrared Emitting Diode and a Silicon NPN Phototransistor in a 6-pin package.
DIMENSION
(Unit : mm)
FEATURES
• TTL Compatible Output • Collector-Emitter Voltage : Min.70V • Current Transfer Ratio : Typ.50% (at I KODENSHI KOREA CORP data | | |
| 7 | K3615 | N-Channel MOSFET, 2SK3615 Ordering number : ENN8332
2SK3615
2SK3615
N-Channel Silicon MOSFET
General-Purpose Switching Device Applications
Features
• Low ON-resistance. • Ultrahigh-speed switching. • 4V drive.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Drain-to-Source Voltag  Sanyo data | |
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