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PDF MSAHZ52F120A Data sheet ( Hoja de datos )
| Número de pieza | MSAHZ52F120A | |
| Descripción | N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR | |
| Fabricantes | Microsemi Corporation | |
| Logotipo |  |
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MSAGZ52F120A
MSAHZ52F120A
Features
• Rugged polysilicon gate cell structure
• high current handling capability, latch-proof
• Hermetically sealed, surface mount power package
• Low package inductance
• Very low thermal resistance
• Reverse polarity available upon request: MSAH(G)Z52F120B
• high frequency IGBT, low switching losses
• anti-parallel FREDiode (MSAHZ52F120A only)
1200 Volts
52 Amps
3.2 Volts vce(sat)
N-CHANNEL
INSULATED GATE
BIPOLAR TRANSISTOR
Maximum Ratings @ 25°C (unless otherwise specified)
DESCRIPTION
SYMBOL
Collector-to-Emitter Breakdown Voltage (Gate Shorted to Emitter)
@ TJ ≥ 25°C
Collector-to-Gate Breakdown Voltage @ TJ ≥ 25°C, RGS= 1 MΩ
Continuous Gate-to-Emitter Voltage
Transient Gate-to-Emitter Voltage
Continuous Collector Current
90°C
Tj= 25°C
Tj=
Peak Collector Current (pulse width limited by Tjmax,)
90°C
Tj= 25°C
Tj=
Avalanche energy (single pulse) @ IC= 25A, VCC= 50V, L= 200µH,
RG= 25Ω, Tj= 25°C
Short circuit current (SOA) , VCE≤ 1200V, TJ= 150°C, tsc≤ 10µs
Short circuit (reverse) current (RBSOA) , VCE≤ 1200V, TJ= 150°C
Power Dissipation
Junction Temperature Range
Storage Temperature Range
Continuous Source Current (Body Diode, MSAHZ52F120A only)
Pulse Source Current (Body Diode, MSAHZ52F120A only)
Thermal Resistance, Junction to Case
Mechanical Outline
BVCES
BVCGR
VGES
VGEM
IC25
IC90
ICM(25)
ICM(90)
EAS
IC(sc)
IC(sc)RBSOA
PD
Tj
Tstg
IS
ISM
θJC
MAX.
1200
1200
+/-20
+/-30
52
33
104
66
65
260
66
300
-55 to +150
-55 to +150
50
100
0.4
COLLECTOR
UNIT
Volts
Volts
Volts
Volts
Amps
Amps
mJ
A
A
Watts
°C
°C
Amps
Amps
°C/W
EMITTER (MS…A)
GATE (MS…B)
Datasheet# MSC0295A
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet MSAHZ52F120A.PDF ] | |
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