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PDF EIC4953-8 Data sheet ( Hoja de datos )
| Número de pieza | EIC4953-8 | |
| Descripción | Internally Matched Power FET | |
| Fabricantes | Excelics Semiconductor | |
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ISSUED 02/28/2008
EIC4953-8
4.90-5.30 GHz 8-Watt Internally Matched Power FET
FEATURES
• 4.90–5.30GHz Bandwidth
• Input/Output Impedance Matched to 50 Ohms
• +39.5 dBm Output Power at 1dB Compression
• 10.5 dB Power Gain at 1dB Compression
• 35% Power Added Efficiency
• -46 dBc IM3 at PO = 28.5 dBm SCL
• 100% Tested for DC, RF, and RTH
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
SYMBOL
P1dB
G1dB
∆G
PAE
Id1dB
IM3
IDSS
PARAMETERS/TEST CONDITIONS1
Output Power at 1dB Compression
f = 4.90-5.30GHz
VDS = 10 V, IDSQ ≈ 2200mA
Gain at 1dB Compression
f = 4.90-5.30GHz
VDS = 10 V, IDSQ ≈ 2200mA
Gain Flatness
f = 4.90-5.30GHz
VDS = 10 V, IDSQ ≈ 2200mA
Power Added Efficiency at 1dB Compression
VDS = 10 V, IDSQ ≈ 2200mA
f = 4.90-5.30GHz
Drain Current at 1dB Compression
f = 4.90-5.30GHz
Output 3rd Order Intermodulation Distortion
∆f=10MHz 2-Tone Test. Pout=28.5 dBm S.C.L
Vds = 10 V, IDSQ ≈ 65% IDSS
f = 5.30GHz
Saturated Drain Current
VDS = 3 V, VGS = 0 V
Caution! ESD sensitive device.
MIN
38.5
9.5
TYP
39.5
10.5
35
2300
MAX
±0.6
2600
UNITS
dBm
dB
dB
%
mA
-43 -46
dBc
4000
5000
mA
VP Pinch-off Voltage
VDS = 3 V, IDS = 40 mA
RTH Thermal Resistance3
Note: 1. Tested with 100 Ohm gate resistor. 2. S.C.L. = Single Carrier Level.
-2.5 -4.0
V
3.5 4.0 oC/W
3. Overall Rth depends on case mounting.
ABSOLUTE MAXIMUM RATING1,2
SYMBOLS
PARAMETERS
ABSOLUTE1
Vds
Drain-Source Voltage
15
Vgs
Gate-Source Voltage
-5
Igsf Forward Gate Current 86.4mA
Igsr
Reverse Gate Current
-14.4mA
Pin
Tch
Tstg
Input Power
Channel Temperature
Storage Temperature
38.5dBm
175 oC
-65 to +175 oC
Pt Total Power Dissipation 38W
Note: 1. Exceeding any of the above ratings may result in permanent damage.
2. Exceeding any of the above ratings may reduce MTTF below design goals.
CONTINUOUS2
10V
-4.5V
28.8mA
-4.8mA
@ 3dB Compression
175 oC
-65 to +175 oC
38W
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com
page 1 of 2
Revised February 2008
1 page | ||
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