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PDF EIC5964-10 Data sheet ( Hoja de datos )
| Número de pieza | EIC5964-10 | |
| Descripción | Internally Matched Power FET | |
| Fabricantes | Excelics Semiconductor | |
| Logotipo |  |
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www.DataSheet4U.com
UPDATED 08/21/2007
EIC5964-10
5.90-6.40 GHz 10-Watt Internally Matched Power FET
2X 0.079 MIN
4X 0.102
FEATURES
• 5.90–6.40GHz Bandwidth
• Input/Output Impedance Matched to 50 Ohms
• +40.5 dBm Output Power at 1dB Compression
• 10.0 dB Power Gain at 1dB Compression
• 37% Power Added Efficiency
• -46 dBc IM3 at PO = 29.5 dBm SCL
• 100% Tested for DC, RF, and RTH
0.945 0.803
Excelics
EIC5964-10
YYWW
SN
0.010
0.158
0.055
0.315
0.685
0.617
0.024
0.580
0.004
0.095
0.055
0.168
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
Caution! ESD sensitive device.
SYMBOL
PARAMETERS/TEST CONDITIONS1
P1dB
G1dB
∆G
PAE
Output Power at 1dB Compression f = 5.90-6.40GHz
VDS = 10 V, IDSQ ≈ 3200mA
Gain at 1dB Compression
f = 5.90-6.40GHz
VDS = 10 V, IDSQ ≈ 3200mA
Gain Flatness
f = 5.90-6.40GHz
VDS = 10 V, IDSQ ≈ 3200mA
Power Added Efficiency at 1dB Compression
VDS = 10 V, IDSQ ≈ 3200mA
f = 5.90-6.40GHz
Id1dB
IM3
Drain Current at 1dB Compression f = 5.90-6.40GHz
Output 3rd Order Intermodulation Distortion
∆f = 10 MHz 2-Tone Test; Pout = 29.5 dBm S.C.L2
VDS = 10 V, IDSQ ≈ 65% IDSS
f = 6.40GHz
IDSS Saturated Drain Current
VDS = 3 V, VGS = 0 V
VP Pinch-off Voltage
RTH Thermal Resistance3
VDS = 3 V, IDS = 60 mA
Note: 1. Tested with 100 Ohm gate resistor.
2. S.C.L. = Single Carrier Level.
3. Overall Rth depends on case mounting.
MIN
39.5
9.0
-43
TYP
40.5
10.0
37
3200
-46
5800
-2.5
2.5
MAX
±0.6
3600
6400
-4.0
3.0
UNITS
dBm
dB
dB
%
mA
dBc
mA
V
oC/W
ABSOLUTE MAXIMUM RATING FOR EFE
SYMBOLS
PARAMETERS
ABSOLUTE1
Vds Drain-Source Voltage
15V
Vgs Gate-Source Voltage
-5V
Igf Forward Gate Current
136mA
Igr Reverse Gate Current -27.2mA
Pin Input Power
40dBm
Tch Channel Temperature
175C
Tstg
Storage Temperature
-65C to +175C
Pt Total Power Dissipation
Note: 1. Exceeding any of the above ratings may result in permanent damage.
2. Exceeding any of the above ratings may reduce MTTF below design goals.
50W
CONTINUOUS2
10V
-4V
40.8mA
-6.8mA
@ 3dB Compression
175C
-65C to +175C
50W
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com
page 1 of 4
Revised October 2007
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet EIC5964-10.PDF ] | |
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