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Número de pieza | EIC8596-2 | |
Descripción | Internally Matched Power FET | |
Fabricantes | Excelics Semiconductor | |
Logotipo | ||
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UPDATED 07/25/2007
EIC8596-2
8.50-9.60 GHz 2-Watt Internally-Matched Power FET
FEATURES
• 8.50-9.60GHz Bandwidth
• Input/Output Impedance Matched to 50 Ohms
• +33.5 dBm Output Power at 1dB Compression
• 8.0 dB Power Gain at 1dB Compression
• 30% Power Added Efficiency
• -46 dBc IM3 at PO = 22.5 dBm SCL
• 100% Tested for DC, RF, and RTH
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
SYMBOL
PARAMETERS/TEST CONDITIONS1
P1dB
G1dB
∆G
PAE
Output Power at 1dB Compression
f = 8.50-9.60GHz
VDS = 10 V, IDSQ ≈ 550mA
Gain at 1dB Compression
f = 8.50-9.60GHz
VDS = 10 V, IDSQ ≈ 550mA
Gain Flatness
f = 8.50-9.60GHz
VDS = 10 V, IDSQ ≈ 550mA
Power Added Efficiency at 1dB Compression
VDS = 10 V, IDSQ ≈ 550mA
f = 8.50-9.60GHz
Id1dB
IM3
Drain Current at 1dB Compression
f = 8.50-9.60GHz
Output 3rd Order Intermodulation Distortion
∆f = 10 MHz 2-Tone Test; Pout = 22.5 dBm S.C.L2
VDS = 10 V, IDSQ ≈ 65% IDSS
f = 9.60GHz
IDSS
Saturated Drain Current
VDS = 3 V, VGS = 0 V
VP Pinch-off Voltage
RTH Thermal Resistance3
VDS = 3 V, IDS = 10 mA
Notes:
1.
2.
3.
Tested with 100 Ohm gate resistor.
S.C.L. = Single Carrier Level.
Overall Rth depends on case mounting.
MIN
32.5
7.0
-43
MAXIMUM RATING AT 25 °C 1,2
SYMBOLS
PARAMETERS
ABSOLUTE1
Vds
Drain-Source Voltage
15
Vgs
Gate-Source Voltage
-5
Igsf Forward Gate Current
21.6mA
Igsr
Reverse Gate Current
-3.6mA
Pin
Tch
Tstg
Input Power
Channel Temperature
Storage Temperature
32.5dBm
175 oC
-65 to +175 oC
Pt Total Power Dissipation
12.5W
Note: 1. Exceeding any of the above ratings may result in permanent damage.
2. Exceeding any of the above ratings may reduce MTTF below design goals.
TYP
33.5
8.0
±0.6
30
600
-46
1000
-2.5
11
MAX
+ 0.8
700
1250
-4.0
12
UNITS
dBm
dB
dB
%
mA
dBc
mA
V
oC/W
CONTINUOUS2
10V
-4V
7.2mA
-1.2mA
@ 3dB Compression
175 oC
-65 to +175 oC
12.5W
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com
page 1 of 2
Revised July 2007
1 page |
Páginas | Total 2 Páginas | |
PDF Descargar | [ Datasheet EIC8596-2.PDF ] |
Número de pieza | Descripción | Fabricantes |
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EIC8596-2 | Internally Matched Power FET | Excelics Semiconductor |
EIC8596-4 | Internally Matched Power FET | Excelics Semiconductor |
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